FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Search Results

FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Result Highlights (5)

Part	Manufacturer	Description
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL

FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN478A Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network	Original	PDF	AN423/D AN423 AN478A AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823
vector modulator Abstract: class B push pull power amplifier LDMOS push pull LDMOS transistor 1W 180 degree hybrid class A push pull power amplifier RF push pull power amplifier SURFACE MOUNT rf TRANSFORMER USE OF TRANSISTOR AN136 Text: Using Intersil Digitally Controlled Potentiometers in Commercial RF Power Amplifier Applications Application Note May 5, 2005 AN136.0 Author: Gareth Lloyd Introduction FIGURE 1. In the past, design techniques for setting bias conditions on RF power amplifiers required the use of either an unreliable	Original	PDF	AN136 vector modulator class B push pull power amplifier LDMOS push pull LDMOS transistor 1W 180 degree hybrid class A push pull power amplifier RF push pull power amplifier SURFACE MOUNT rf TRANSFORMER USE OF TRANSISTOR
AN1365 Abstract: AN136 LMC6064 X9250 X9418 power combiner broadband transformers wideband linear amplifier XICO Text: Application Note AN136 Using Xicor Digitally Controlled Potentiometers in Commercial RF Power Amplifier Applications P Gareth Lloyd, pglloyd@elab-ltd.co.uk Efficient, Linear & Broadband Ltd., Warrington Business Park, Long Lane, Warrington, Cheshire. WA2 8TX, U.K.	Original	PDF	AN136 X9258T= AN136-6 AN1365 AN136 LMC6064 X9250 X9418 power combiner broadband transformers wideband linear amplifier XICO
pin diagram for IC cd 1619 fm receiver Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000 Text: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.	Original	PDF
S11 SCHOTTKY diode Abstract: S11 zener diode phase shifter using lumped elements Microwave detector diodes history of varactor diode schottky transistor spice Text: Winter 2000 Application Notes MicroNote 704 The Effects of Microwave Packages on Broadband Device Performance Throughout the history of electronic circuit manufacturing, there has always been a perceived need for semiconductor device packages. A device package provides the means to	Original	PDF
spf-5122 Abstract: spf5122 SPF-5122Z spf-5043 SPF5043 SPF5122Z picoBTS SPF-5043Z SPF5043Z spf51 Text: Product Spotlight ❚❚❚❚ 400 To 3000 MHz High Dynamic Range LNAs For Wireless Infrastructure By Kevin W. Kobayashi, Executive Engineering Fellow, and Terry J. Hon, Marketing Manager, Sirenza Microdevices I Infrastructure receiver applications for cellular, ISM	Original	PDF
Large-signal Modeling of SiGe HBT for PA Applications Abstract: No abstract text available Text: IEEE BCTM 6.1 Large-signal Modeling of SiGe HBT for PA Applications Tzung-Yin Lee, Sunyoung Lee, Pete Zampardi, and Jongchan Kang Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617, USA maximizing the power added efficiency PAE . Recent emphasis for extended battery life in a metropolitan	Original	PDF
darlington pair power transistor Abstract: AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor Text: Freescale Semiconductor Application Note AN3100 Rev. 0, 3/2005 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single	Original	PDF	AN3100 darlington pair power transistor AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor
Untitled Abstract: No abstract text available Text: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.	Original	PDF
SIT Static Induction Transistor Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are	Original	PDF	AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
darlington pair transistor Abstract: Darlington pair AN3100 AN31001 Text: Freescale Semiconductor Application Note AN3100 Rev. 2, 7/2008 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single	Original	PDF	AN3100 darlington pair transistor Darlington pair AN3100 AN31001
NONLINEAR MODEL LDMOS Abstract: No abstract text available Text: Switch-Mode RF PAs Using Chireix Outphasing Simplified Theory and Practical Application Notes by Robin Wesson, Base Station System Architect, RF Power Innovation, NXP Semiconductors Mark van der Heijden, Senior Scientist, RF Power Innovation, NXP Semiconductors	Original	PDF
mosfet p321 Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation	Original	PDF	AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
AN215A Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation	Original	PDF	AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing

volterra Abstract: HBT 01 05G gummel VOLTERRA SEMICONDUCTOR SOA HBT 01 05G circuit HBT transistor AP601 AP602 AP603 31-0q Text: Application Note AP60x Devices & 28V InGaP HBT Process Technology 1.0 Introduction The third generation 3G of cellular networks requires a high linearity from the power devices to ensure minimum spectrum growth in the adjacent bands. As a result they have to	Original	PDF	AP60x 1-800-WJ1-4401 volterra HBT 01 05G gummel VOLTERRA SEMICONDUCTOR SOA HBT 01 05G circuit HBT transistor AP601 AP602 AP603 31-0q
2N5109 motorola Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.	Original	PDF	AN1024/D AN1024 2N5109 motorola 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator
high frequency transistor ga as fet Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .	Original	PDF	ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
high power FET transistor s-parameters Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .	Original	PDF	ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
TRANSISTOR cBC 415 Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details	Original	PDF	TED-21, TRANSISTOR cBC 415 Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
L-07C1N8ST Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T Text: ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure	Original	PDF	ATF-55143 ATF-55143 AV01-0376EN L-07C1N8ST atf55143 fet curtice nonlinear model sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
MRF1550 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	PDF	MRF1550T1 AN215A, MRF1550
EB209 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband	Original	PDF	MRF1550T1 AN215A, EB209
transistor j326 Abstract: AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1530/D SEMICONDUCTOR APPLICATION NOTE AN1530 Motorola Advanced Amplifier Concept Package Prepared by: Alan Wood Motorola Semiconductor Products Sector Freescale Semiconductor, Inc. ABSTRACT	Original	PDF	AN1530/D AN1530 transistor j326 AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
TIS69 equivalent Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26 Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the	OCR Scan	PDF	2N5045, 2N5046, 2N5047 TIS69 equivalent 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26

FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Search Results

FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Result Highlights (5)

FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Datasheets Context Search

AN478A

vector modulator

AN1365

pin diagram for IC cd 1619 fm receiver

S11 SCHOTTKY diode

spf-5122

Large-signal Modeling of SiGe HBT for PA Applications

darlington pair power transistor

Untitled

SIT Static Induction Transistor

darlington pair transistor

NONLINEAR MODEL LDMOS

mosfet p321

AN215A

volterra

2N5109 motorola

high frequency transistor ga as fet

high power FET transistor s-parameters

TRANSISTOR cBC 415

L-07C1N8ST

MRF1550

EB209

transistor j326

TIS69 equivalent