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    FIGURE29 Search Results

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    FIGURE29 Price and Stock

    Georg Fischer Ltd FIGURE 291_770291204

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    Chip1Stop FIGURE 291_770291204 800
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    IBS Electronics FIGURE 291_770291204 800 415
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    Georg Fischer Ltd FIGURE 291

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    Chip1Stop FIGURE 291 570
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    IBS Electronics FIGURE 291 570 694
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    FIGURE29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


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    PDF CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


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    PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL

    bt 2323

    Abstract: TX-2G
    Text: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3% Dynamic EVM @ POUT = +17 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe


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    PDF 11a/b/g/n AWL9966 bt 2323 TX-2G

    46LR32640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    PDF IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-6BLI 90-ball -40oC 64Mx32 IS46LR32640A-5BLA1 46LR32640A Mobile DDR SDRAM

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


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    PDF CMS3216LAx-75Ex 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    Untitled

    Abstract: No abstract text available
    Text: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays


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    PDF IDT82V2082 772KHz TBR12/13 82V2082

    VOGT n3 503 20 010 50

    Abstract: No abstract text available
    Text: HFC - S active ISDN Microprocessor ARM7 based Preliminary Data Sheet: July 2002 Copyright 1994 - 2002 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by patent or other rights.


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    PDF

    adp3208

    Abstract: APD3208 ADP3208CJCPZ-RL
    Text: Preliminary Buck Controller ADP3208C FEATURES GENERAL DESCRIPTION Single-chip solution Fully compatible with the Intel IMVP-6+ specifications Integrated MOSFET drivers Input Voltage Range of 3.3 V to 22 V


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    PDF ADP3208C ADP3208C adp3208 APD3208 ADP3208CJCPZ-RL

    Untitled

    Abstract: No abstract text available
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit

    IST13

    Abstract: No abstract text available
    Text: CR16MNS5, CR16MFS5, and CR16MPS5 are Obsolete Devices CR16MES5,CR16MES9,CR16MFS5,CR16MFS9, CR16MHS5,CR16MHS9,CR16MNS5,CR16MNS9, CR16MPS5,CR16MUS5,CR16MUS9 6MPS5/CR16MUS5/CR16MUS9 Family of CompactRISC 16-Bit Microcontrollers


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    PDF CR16MNS5, CR16MFS5, CR16MPS5 CR16MES5 CR16MES9 CR16MFS5 CR16MFS9, CR16MHS5 CR16MHS9 CR16MNS5 IST13

    D560 transistor

    Abstract: nec D560 transistor transistor d560 transistor D1138 KS51850 KS51850 D4 Samsung tv remote control circuit diagram d1138 transistor d560 nec nec D560
    Text: 51850 2 KS51850 OVERVIEW KS51850, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The KS51850


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    PDF KS51850 KS51850, SMCS-51 KS51850 fxx/12 0800h 0900h 0a00h D560 transistor nec D560 transistor transistor d560 transistor D1138 KS51850 D4 Samsung tv remote control circuit diagram d1138 transistor d560 nec nec D560

    46LR16640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit IS43LR16640A-5BL IS43LR16640A-6BL 60-ball -40oC 64Mx16 46LR16640A Mobile DDR SDRAM

    46LR32640A

    Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
    Text: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    PDF IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-5BL IS43LR32640A-6BL 90-ball -40oC 64Mx32 46LR32640A Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A

    446H

    Abstract: 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821 640-Pin
    Text: 21 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2821 Version 3 February 6, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.


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    PDF IDT82P2821 640-pin BH640) BHG640) 82P2821 446H 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821

    BF484

    Abstract: IDT82P20516 transformer e19 GR-253-CORE GR-499-CORE 82P20516 chn 347
    Text: 16-Channel Short Haul E1 Line Interface Unit IDT82P20516 Version December 17, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.


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    PDF 16-Channel IDT82P20516 484-pin BF484) BFG484) 82P20516 82P20516D BF484 IDT82P20516 transformer e19 GR-253-CORE GR-499-CORE 82P20516 chn 347

    package detail of IDT82V2081

    Abstract: IDT82V2081 TQFP44 TQFP44 package
    Text: SINGLE CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2081 FEATURES: • • • • • • • Single channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays


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    PDF IDT82V2081 772KHz TBR12/13 82V2081 package detail of IDT82V2081 IDT82V2081 TQFP44 TQFP44 package

    ILI9325DS_V0.43

    Abstract: ILI9325 BIT 3195 G G184 BIT+3195+G ILI9325D
    Text: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Version: V0.43 Document No.: ILI9325DS_V0.43.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096


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    PDF ILI9325 240RGBx320 ILI9325DS ILI9325DS_V0.43 ILI9325 BIT 3195 G G184 BIT+3195+G ILI9325D

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


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    PDF IS43/46LR32200B 32Bits IS43/46LR32200B 32-bit IS43LR32200B-6BLI 90-ball -40oC 2Mx32

    Untitled

    Abstract: No abstract text available
    Text: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


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    PDF S43LR16200C 16Bits IS43LR16200C 2Mx16 IS43LR16200C-6BL 60-ball IS43LR16200C-6BLI

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    PDF IS43/46LR32800F 32Bits IS43/46LR32800F 32-bit IS43LR32800F-6BLI 90-ball -40oC 8Mx32 IS46LR32800F-6BLA1

    c814C

    Abstract: F217 EUA4890A EUA4890AHIR1
    Text: 芯美电子 EUA4890A 1 Watt Audio Power Amplifier DESCRIPTION FEATURES The EUA4890A is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The EUA4890A is capable of delivering 1.0W of continuous average power to an 8Ω


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    PDF EUA4890A EUA4890A 350mW DS4890A c814C F217 EUA4890AHIR1

    DS5202

    Abstract: 3.5mm stereo headphone jack 8ohm 0.5W speakers EUA5202 EUA5202QIT1 15W 50 Ohm Resistors EUA5202QIR0 EUA5202QIR1 Figure37 EUA MARKING CODE Speaker - 0.5W 8Ohm
    Text: 芯美电子 EUA5202 2-W Stereo Audio Power Amplifier with Mute DESCRIPTION FEATURES z The EUA5202 is a stereo audio power amplifier that delivering 2W of continuous RMS power per channel into 3-Ω loads. When driving 1W into 8-Ω speakers, the EUA5202 has less than 0.04% THD+N across its


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    PDF EUA5202 800mW/ch TSSOP-24 EUA5202 MO-153 DS5202 3.5mm stereo headphone jack 8ohm 0.5W speakers EUA5202QIT1 15W 50 Ohm Resistors EUA5202QIR0 EUA5202QIR1 Figure37 EUA MARKING CODE Speaker - 0.5W 8Ohm

    AN-532A

    Abstract: AN532A MC1648 MC4324/4024 MC1648 equivalent MC74416
    Text: INTR O D U C TIO N 1 PHASE-DETECTORS 2 OSCILLATORS - M U L TIV IB R A TO R S 3 M IXERS COUNTERS 5 APPLICATIONS 6 PACKAGING PHASE-LOCKED LOOP DATA BOOK Second Edition August, 1973 MECL, MECL III, MECL 10,000, MTTL, and McMOS are trademarks of Motorola Inc.


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