FLC157XP Search Results

FLC157XP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLC157XP		Eudyna Devices	GaAs FET & HEMT Chips		Original	PDF

FLC157XP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for	Original	FLC157XP FLC157XP	PDF
GaAs FET HEMT Chips Abstract: 1756 N2 C-Band Power GaAs FET HEMT Chips 1060 fet FLC157XP 682 FET Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for	Original	FLC157XP FLC157XP GaAs FET HEMT Chips 1756 N2 C-Band Power GaAs FET HEMT Chips 1060 fet 682 FET	PDF
Untitled Abstract: No abstract text available Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for	Original	FLC157XP FLC157XP	PDF
Untitled Abstract: No abstract text available Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for	Original	FLC157XP FLC157XP FCSI0598M200	PDF
GaAs FET HEMT Chips Abstract: 1756 N2 FLC157XP Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for	Original	FLC157XP FLC157XP FCSI0598M200 GaAs FET HEMT Chips 1756 N2	PDF
FLC157XP Abstract: FLC157 Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for	Original	FLC157XP FLC157XP FLC157	PDF
Filtronic Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15	Original	FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500	PDF
FLC157XP Abstract: C-Band Power GaAs FET HEMT Chips fujitsu hemt fujitsu gaas fet Text: FLC157XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-\|<jB = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability DESCRIPTION	OCR Scan	FLC157XP FLC157XP FCSI0598M200 C-Band Power GaAs FET HEMT Chips fujitsu hemt fujitsu gaas fet	PDF