Untitled
Abstract: No abstract text available
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-3
FLL400IP-3
FCSI0598M200
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FLL400IP-2
Abstract: C4727 fujitsu gaas fet "class AB Linear" 50mhz
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-2
FLL400IP-2
FCSI0799M200
C4727
fujitsu gaas fet
"class AB Linear" 50mhz
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Untitled
Abstract: No abstract text available
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-2
FLL400IP-2
FCSI0799M200
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High Power GaAs FET
Abstract: GaAs FET 15A fll400ik-2c ED-4701 RM1101
Text: FLL400IK-2C High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=46.0dBm Typ. ・High Gain: G1dB=13.0dB(Typ.) ・High PAE: ηadd=45%(Typ.) ・Broad Band: 2.11~2.17GHz ・Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited
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FLL400IK-2C
17GHz
FLL400IK-2C
High Power GaAs FET
GaAs FET 15A
ED-4701
RM1101
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fujitsu gaas fet
Abstract: GAAS FET AMPLIFIER High Power GaAs FET Eudyna Devices ED-4701 FLL400IK-2
Text: FLL400IK-2 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=12.0dB(Typ.) ・High PAE: ηadd=46%(Typ.) ・Broad Band: 1.8~2.0GHz ・Hermetically Sealed Package DESCRIPTION The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited
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FLL400IK-2
FLL400IK-2
fujitsu gaas fet
GAAS FET AMPLIFIER
High Power GaAs FET
Eudyna Devices
ED-4701
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GSC371BAL2000
Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band
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1930MHz
FLL400IP-2
1930-1990MHz
720mA
96GHz
GSC371BAL2000
Fujitsu GaAs FET application note
GSC371-BAL2000
12v class d amplifier 40W
gaas fet vhf uhf
GSC371
soshin
RO3010
fujitsu rf power amplifier l band
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FLL400IP-3
Abstract: eudyna GaAs FET Amplifier
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-3
FLL400IP-3
eudyna GaAs FET Amplifier
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1 928 498 056
Abstract: FLL400IP-3 s-band 50 Watt power amplifier 1 928 498 016 1 928 498 014
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-3
FLL400IP-3
1 928 498 056
s-band 50 Watt power amplifier
1 928 498 016
1 928 498 014
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Untitled
Abstract: No abstract text available
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-2
FLL400IP-2
FCSI0799M200
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FLL400IP-3
Abstract: 1 928 498 167
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-3
FLL400IP-3
1 928 498 167
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FLL400IP-2
Abstract: No abstract text available
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-2
FLL400IP-2
FCSI0799M200
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Eudyna Devices power amplifiers
Abstract: No abstract text available
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-2
FLL400IP-2
Eudyna Devices power amplifiers
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FLL400IP-3
Abstract: No abstract text available
Text: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-3
FLL400IP-3
FCSI0598M200
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Eudyna Devices power amplifiers
Abstract: C4727 FLL400IP-2 eudyna GaAs FET Amplifier
Text: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-2
FLL400IP-2
Eudyna Devices power amplifiers
C4727
eudyna GaAs FET Amplifier
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FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
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FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
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Untitled
Abstract: No abstract text available
Text: FLL400IP-3 fujÎt su L-Band Medium & High Power GaAs FETs FEATURES • • • • Push-Pull Configuration High PAE: 43% Typ. Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that
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FLL400IP-3
FLL400IP-3
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Untitled
Abstract: No abstract text available
Text: FLL400IP-3 _ FEATURES • • • • • L-Band Medium & High Power GaAs FET Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V
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FLL400IP-3
FLL400IP-3
FCSI0598M200
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FLL400IP2
Abstract: FLL400IP-2 720n
Text: j» FLL400IP-2 L-Band Medium & High Power GaAs FET s r U J11 j U FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V
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FLL400IP-2
FLL400IP-2
FLL400IP2
720n
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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