FPD2250SOT89
Abstract: FPD2250
Text: Balanced EBD2250SOT89-AA FPD2250SOT89 1.85GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 1.7 1.85 31.4 31.2 15.2 14.8 0.9 0.9 43.0 44.0 5V, 150mA DESCRIPTION AND APPLICATIONS The data given above is based on measurements taken on the evaluation board described
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EBD2250SOT89-AA
FPD2250SOT89
85GHz
150mA
1700MHz
FPD2250SOT89;
150mA
FPD2250
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9421
Abstract: FPD2250SOT89
Text: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB2250SOT89BB
FPD2250SOT89
900MHz
28dBm
39dBm
18dBm
300mA
FPD2250SOT89;
2250m
30mil
9421
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FPD2250
Abstract: FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 Filtronic Components
Text: FPD2250SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 14 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD2250SOT89E
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FPD2250SOT89
FPD2250SOT89E
FPD2250SOT89
FPD2250
FPD2250SOT89E
MIL-HDBK-263
Filtronic Components
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant
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FPD2250SOT89
1850MHZ)
FPD2250SOT89E
FPD2250SOT89
FPD2250SOT89E
FPD2250SOT89CE
FPD1500SOT89
FPD2250SOT89CE
MIL-HDBK-263
filtronic 921
J370
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pseudomorphic HEMT
Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
Text: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes
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FPD2250
FPD22501
FPD2250
25mx2250m
32dBm
12GHz
42dBm
FPD2250-000
pseudomorphic HEMT
MIL-HDBK-263
InP transistor HEMT
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FPD2250DFN
Abstract: FPD2250SOT89 MIL-HDBK-263
Text: FPD2250DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 29 dBm Output Power (P1dB) ♦ 16.5 dB Small-Signal Gain (SSG) ♦ 1.0 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available
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FPD2250DFN
FPD2250DFN
FPD2250SOT89
MIL-HDBK-263
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency
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FPD2250SOT89CE
FPD2250SOT8
FPD2250SOT89CE:
31dBm
44dBm
FPD2250SOT89CE
25mx1500m
EB2250SOT89CE-BC
FPD2250SOT89CECE
FPD1500SOT89
FPD2250SOT89
MIL-HDBK-263
FPD2250SOT
FPD2250
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41dBm
Abstract: FPD2250SOT89
Text: EB2250SOT89BC FPD2250SOT89 2.0GHz PA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 2.0GHz 29dBm Output Power 13dB Gain 41dBm IP3 Noise Figure 1.5dB Bias 5V, 50% Idss DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB2250SOT89BC
FPD2250SOT89
29dBm
41dBm
FPD2250SOT89;
2250m
30mil
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FPD2250
Abstract: MIL-HDBK-263 P100
Text: FPD2250 1.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 32 dBm Linear Output Power at 12 GHz ♦ 7.5 dB Power Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE (µm): 680 x 470 DIE THICKNESS: 75 µm
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FPD2250
FPD2250
MIL-HDBK-263
P100
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pseudomorphic HEMT
Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD2250SOT89
FPD2250SOT8
FPD2250SOT89
25mx1500m
31dBm
44dBm
FPD2250SOT89CE
EBD2250SOT89CE-AB
EBD2250SOT89CE-BB
EBD2250SOT89CE-AA
pseudomorphic HEMT
FPD1500SOT89
FPD2250SOT89E
MIL-HDBK-263
FPD2250SOT
FPD2250
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2.4GHz amplifier schematic
Abstract: 2.4GHz amplifier layout FPD2250 transistor 2.4GHz amplifier schematic FPD2250SOT89
Text: EB2250SOT89BE FPD2250SOT89 2.4GHz PA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.2 2.4 30.0 30.0 11.5 11.0 1.2 1.5 41.0 41.0 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB2250SOT89BE
FPD2250SOT89
300mA
FPD2250SOT89;
2250m
30mil
2.4GHz amplifier schematic
2.4GHz amplifier layout
FPD2250
transistor 2.4GHz amplifier schematic
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency
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FPD2250SOT89
FPD2250SOT8
FPD2250SOT89E:
31dBm
44dBm
FPD2250SOT89
25mx1500m
FPD2250SOT89E
EB2250SOT89CE
EB2250SOT89CE-BC
FPD1500SOT89
FPD2250SOT89E
TRANSISTOR SSG 111
oint 4410
HBT transistor s parameters measures
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FPD2250
Abstract: PAD130
Text: FPD2250 Datasheet v3.0 1.5W POWER PHEMT LAYOUT: FEATURES: • • • • 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High
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FPD2250
FPD2250
22-A114.
MIL-STD-1686
MILHDBK-263.
PAD130
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FPD2250SOT89
Abstract: FPD2250
Text: EB2250SOT89BA FPD2250SOT89 1.85GHz EVALUATION BOARD FEATURES Measured Noise Figure 1.00 0.80 N.F. dB • • ¥ ¥ ¥ Measured @ 1.85GHz 29dBm Output Power 14.5dB Gain 42dBm OIP3 Noise Figure 0.7dB Bias 5V, 300mA 0.60 0.40 0.20 N.F.1 (dB) 0.00 N.F.2(dB)
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EB2250SOT89BA
FPD2250SOT89
85GHz
85GHz
29dBm
42dBm
300mA
85GHz.
FPD2250SOT89;
2250m
FPD2250
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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FPD2250
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 FPD1500SOT89 FPD2250SOT89 Filtronic Compound Semiconductors FPD2250SOT
Text: FPD2250SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • Datasheet v2.3 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant
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FPD2250SOT89
1850MHZ)
FPD2250SOT89E
FPD2250SOT89
FPD2250SOT89E
FPD2250SOT89CE
FPD2250
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 157
FPD2250SOT89CE
MIL-HDBK-263
FPD1500SOT89
Filtronic Compound Semiconductors
FPD2250SOT
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VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
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RF5632
Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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