pseudomorphic HEMT
Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm
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FPD6836SOT343
FPD6836SOT3
OT343
FPD6836SOT343
mx750
1850MHz)
18dBm
2002/95/EC)
FPD6836SOT343E
FPD6836SOT343E-AG
pseudomorphic HEMT
TRANSISTOR c 5578 B
TRANSISTOR BC 135
0604HQ
OT343
3.5GHz BJT
bc 548 transistor
transistor bc 731
transistor bc 564
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FPD6836SOT343
Abstract: rogers 4003
Text: EB6836SOT343AC FPD6836SOT343 2.0GHz LNA EVALUATION BOARD DESCRIPTION AND APPLICATIONS The data given below is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a single-ended, dual biased, low noise amplifier. It
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EB6836SOT343AC
FPD6836SOT343
92GHz
17GHz.
FPD6836SOT343;
rogers 4003
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FPD6836P70
Abstract: FPD6836 Filtronic* FPD6836 fpd6836p
Text: PRELIMINARY • FPD6836P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 22 dBm Output Power P1dB ♦ 19 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.5 dB Noise Figure at 1.85 GHz ♦ 32 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 20 GHz
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FPD6836P70
FPD6836P70
FPD6836
Filtronic* FPD6836
fpd6836p
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FPD6836SOT343
Abstract: FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423
Text: FPD6836SOT343 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • 0.5 dB Noise Figure at 25% Bias 19 dBm Output Power (P1dB) 19 dB Small-Signal Gain (SSG) 32 dBm Output IP3 at 50% Bias RoHS compliant (Directive 2002/95/EC)
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FPD6836SOT343
1850MHZ)
2002/95/EC)
FPD6836SOT343
22A114.
MIL-STD-1686
MIL-HDBK-263.
FPD6836SOT343E
MIL-HDBK-263
te 804
Filtronic 423
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Filtronic* FPD6836
Abstract: FPD6836 transistor A114
Text: FPD6836 Datasheet v3.0 0.25W POWER PHEMT FEATURES: • • • • • • LAYOUT: 25.5 dBm Output Power P1dB 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation GENERAL DESCRIPTION:
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FPD6836
22-A114.
MIL-STD-1686
MILHDBK-263.
Filtronic* FPD6836
FPD6836
transistor A114
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transistor bc 564
Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz Optimum Technology Matching Applied GaAs HBT RoHS-compliant (Directive
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FPD6836SOT343
FPD6836SOT3
OT343
1850MHz)
2002/95/EC)
18dBm
FPD6836SOT343
mx750
FPD6836SOT343E
EB6836SOT343CE-BA
transistor bc 564
bc 5578
0604HQ
OT343
re 0603size
bc 548 transistor
S22m
transistor BC 548 Data
transistor Bc 540
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Filtronic* FPD6836
Abstract: No abstract text available
Text: FPD6836 0.25W POWER PHEMT Datasheet v2.3 FEATURES: • • • • • • LAYOUT: 25.5 dBm Output Power P1dB 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation GENERAL DESCRIPTION:
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FPD6836
FPD6836
22A114.
MIL-STD-1686
MIL-HDBK-263.
Filtronic* FPD6836
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FPD6836
Abstract: Filtronic* FPD6836 l0241 Modelling Report FPD6836 Filtronic Components MARK 8E diode Modelling TOM2
Text: FPD6836 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD6836 TOM3 and TOM2 Models Version 1.0 - Mark Holm Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. Mark Holm 1 Filtronic Confidential FPD6836 TOM3 and TOM2 Models 24/01/2005
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FPD6836
28GHz
25GHz
Filtronic* FPD6836
l0241
Modelling Report FPD6836
Filtronic Components
MARK 8E diode
Modelling
TOM2
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FPD6836
Abstract: FPD6836SOT343 FPD750SOT343 MIL-HDBK-263 pHEMT transistor 360 Filtronic* FPD6836
Text: PRELIMINARY FPD6836SOT343 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 0.5 dB Noise Figure ♦ 20 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (SSG) ♦ 32 dBm Output IP3 ♦ Evaluation Boards Available • DESCRIPTION AND APPLICATIONS
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FPD6836SOT343
FPD6836SOT343
FPD6836
FPD750SOT343
MIL-HDBK-263
pHEMT transistor 360
Filtronic* FPD6836
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FPD6836
Abstract: s-parameters w345 fpd6836p transistor RF S-parameters Filtronic Compound Semiconductors FPD6836P70
Text: FPD6836P70 Datasheet v2.1 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: • • • • • • PACKAGE: 22 dBm Output Power P1dB 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz
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FPD6836P70
FPD6836P70
2-11GHz)
18GHz)
22A114-B
JESD22-A115-A
MIL-STD-1686
MIL-HDBK-263.
FPD6836
s-parameters
w345
fpd6836p
transistor RF S-parameters
Filtronic Compound Semiconductors
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FPD6836SOT343E
Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
Text: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz Optimum Technology Matching Applied GaAs HBT RoHS-compliant (Directive
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FPD6836SOT343E
FPD6836SOT3
43ELow-Noise
OT343
1850MHz)
2002/95/EC)
18dBm
FPD6836SOT343E
mx750
0604HQ
FPD6836SOT343ESB
FPD6836SOT343ESQ
0603 footprint IPC
im 1117
atc x7r
transistor bc 540
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FPD6836P70
Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.
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FPD6836P70
FPD6836P70
22dBm
18GHz
11GHz)
18GHz)
FPD6836P70-AG
FPD6836P70-AJ
FPD6836P70SQ
FPD6836P70SR
mrs 317
36P7
LL1005FHL
0805X7R
BC 945 transistor
PHEMT marking code B
fpd6836p
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rogers 4003
Abstract: FPD6836SOT343
Text: EB6836SOT343BA FPD6836SOT343 1.85GHz LNA EVALUATION BOARD FEATURES • • • • • • 18 dBm Output Power 18 dB Small Signal Gain 0.4 dB Noise Figure 28 dBm OIP3 @ 5dBm Pout Single Tone Bias 3V, 30mA 29.5 dBm OIP3 @ 5dBm Pout (Single Tone) When Biased at 3V, 50mA.
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EB6836SOT343BA
FPD6836SOT343
85GHz
FPD6836SOT343;
85GHz
rogers 4003
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FPD6836
Abstract: FPD6836-000SQ FPD6836-000 pseudomorphic HEMT MIL-HDBK-263 TRANSISTOR 841
Text: FPD6836 FPD6836 0.25W Power pHEMT 0.25W POWER pHEMT Package Style: Bare Die Product Description Features The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx360μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD6836
FPD6836
25mx360m
12GHz
24GHz
FPD6836-000
DS090612
FPD6836-000SQ
FPD6836-000SQ
FPD6836-000
pseudomorphic HEMT
MIL-HDBK-263
TRANSISTOR 841
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Untitled
Abstract: No abstract text available
Text: FPD6836 FPD6836 0.25W Power pHEMT 0.25W POWER pHEMT Package Style: Bare Die Product Description Features The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx360μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD6836
FPD6836
mx360Î
12GHz
24GHz
FPD6836-000
DS090612
FPD6836-000SQ
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FPD6836P70
Abstract: No abstract text available
Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.
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FPD6836P70
FPD6836P70
22dBm
18GHz
FPD6836P70-AG
FPD6836P70-AJ
FPD6836P70SQ
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FPD6836P70
Abstract: TL11 TL21 TL22
Text: FPD6836P70 Datasheet v3.0 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: • • • • • • PACKAGE: 22 dBm Output Power P1dB 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz
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FPD6836P70
FPD6836P70
2-11GHz)
18GHz)
22A114-B
JESD22-A115-A
MIL-STD-1686
MILHDBK-263.
TL11
TL21
TL22
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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VCO-102
Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high
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rf3826
Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.
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RF5632
Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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