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    onsemi FQPF10N60CT

    MOSFET N-CH 600V 9.5A TO220F
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    FQPF10N60CT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQPF10N60CT Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQPF10N60CT_NL Fairchild Semiconductor 600V N-Channel Advance Q-FET C-Series Original PDF

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    10N60CT

    Abstract: 10N60C FQPF10N60CT FQPF Series fqpf10n60c FQPF10N60C FQPF Series FQPF 10N60 FQP10N60C
    Text: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N60C FQPF10N60C FQPF10N60C FQPF10N60CT 10N60CT 10N60C FQPF Series fqpf10n60c FQPF Series FQPF 10N60

    FQPF10N60CT

    Abstract: FQP10N60C
    Text: FQP10N60C / FQPF10N60C N-Channel QFET MOSFET 600 V, 9.5 A, 730 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FQP10N60C FQPF10N60C FQPF10N60CT