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    FQPF Search Results

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    FQPF Price and Stock

    Rochester Electronics LLC FQPF8N90C

    MOSFET N-CH 900V 6.3A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQPF8N90C Bulk 17,054 237
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    • 1000 $1.27
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    FQPF8N90C Bulk 2,796 237
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    • 1000 $1.27
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    Flip Electronics FQPF17N40T

    N-CHANNEL QFET MOSFET 400V, 9.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQPF17N40T Tube 10,000 400
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    Flip Electronics FQPF9P25YDTU

    P-CHANNEL QFET MOSFET -250 V, -6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQPF9P25YDTU Tube 5,600 1,000
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    Flip Electronics FQPF47P06YDTU

    MOSFET P-CH 60V 30A TO-220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQPF47P06YDTU Tube 2,700 200
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    Flip Electronics FQPF9N25CYDTU

    N-CHANNEL QFET MOSFET 250V, 8.8A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQPF9N25CYDTU Tube 2,400 1,200
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    Find more FQPF price and stock on Findchips.com

    FQPF Datasheets (282)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQPF10N20 Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    FQPF10N20 Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQPF10N20C Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    FQPF10N20C_NL Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQPF10N20L Fairchild Semiconductor 200V LOGIC N-Channel MOSFET Original PDF
    FQPF10N50CF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 10A TO-220F Original PDF
    FQPF10N50CF Fairchild Semiconductor 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF
    FQPF10N60C Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQPF10N60C Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQPF10N60CF Fairchild Semiconductor 600V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF
    FQPF10N60CT Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQPF10N60CT_NL Fairchild Semiconductor 600V N-Channel Advance Q-FET C-Series Original PDF
    FQPF10N60CYDTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.5A TO-220F Original PDF
    FQPF10N60C_F105 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - IC POWER MANAGEMENT Original PDF
    FQPF11N40 Fairchild Semiconductor 400 V N-Channel MOSFET Original PDF
    FQPF11N40C Fairchild Semiconductor Original PDF
    FQPF11N40CT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10.5A TO-220F Original PDF
    FQPF11N40T Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 6.6A TO-220F Original PDF
    FQPF11N50CF Fairchild Semiconductor 500V N-Channel Advanced Q-FET C-series (FRFET) Original PDF
    FQPF11N50CF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11A TO-220F Original PDF
    ...

    FQPF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQP13N50CF

    Abstract: FQPF13N50CF FQPF Series FQPF
    Text: FRFET TM FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS on = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP13N50CF FQPF13N50CF FQPF13N50CF FQPF Series FQPF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area


    Original     		PDF FQPF6N50 O-220F

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area


    Original     		PDF FQPF6N25 O-220F

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF5N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. • Extended Safe Operating Area


    Original     		PDF FQPF5N20 O-220F

    FQPF7N60

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area


    Original     		PDF FQPF7N60 O-220F FQPF7N60

    FQPF Series

    Abstract: FQPF5P10
    Text: FQPF5P10 August 2000 QFET TM FQPF5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF5P10 -100V, FQPF Series FQPF5P10

    FQPF Series

    Abstract: FQPF17P10
    Text: FQPF17P10 August 2000 QFET TM FQPF17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF17P10 -100V, FQPF Series FQPF17P10

    5n50c

    Abstract: FQPF*5n50c 5n50
    Text: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP5N50C/FQPF5N50C FQPF5N50C FQPF5N50CT FQPF5N50CYDTU 5n50c FQPF*5n50c 5n50

    Untitled

    Abstract: No abstract text available
    Text: FQPF5N20L May 2000 QFET TM FQPF5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF5N20L

    fqpf12n60

    Abstract: FQPF12N60T
    Text: FQPF12N60 April 2000 QFET TM FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF12N60 O-220F FQPF12N60 FQPF12N60T O-220F O-220F-3

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS on = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP13N50CF FQPF13N50CF 100ns)

    FQPF17P06

    Abstract: No abstract text available
    Text: FQPF17P06 September 2000 QFET TM FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF17P06 FQPF17P06

    FQPF60N03L

    Abstract: fqpf60
    Text: QFET TM FQPF60N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF60N03L FQPF60N03L fqpf60

    FQPF95N03L

    Abstract: No abstract text available
    Text: QFET TM FQPF95N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF95N03L FQPF95N03L

    FQPF9N25C

    Abstract: FQPF Series FQPF*9n25c FQPF FQP9N25C
    Text: FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP9N25C/FQPF9N25C FQPF9N25C FQPF Series FQPF*9n25c FQPF FQP9N25C

    Untitled

    Abstract: No abstract text available
    Text: FQPF5N40 N-Channel QFET MOSFET 400 V, 3.0 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQPF5N40 O-220F

    Untitled

    Abstract: No abstract text available
    Text: FQPF9P25 P-Channel QFET MOSFET -250 V, -6 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQPF9P25 O-220F

    Untitled

    Abstract: No abstract text available
    Text: FQP3N80C / FQPF3N80C N-Channel QFET MOSFET 800 V, 3.0 A, 4.8 mΩ Features Description • 3.0 A, 800 V, RDS on = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 13 nC) planar stripe and DMOS technology. This advanced


    Original     		PDF FQP3N80C FQPF3N80C

    FQPF5N60C

    Abstract: No abstract text available
    Text: FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Ω Description Features • 4.5 A, 600 V, RDS on = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQP5N60C FQPF5N60C FQPF5N60C

    Untitled

    Abstract: No abstract text available
    Text: FQP8N90C / FQPF8N90C N-Channel QFET MOSFET 900 V, 6.3 A, 1.9 Ω Description Features • 6.3 A, 900 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.15 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQP8N90C FQPF8N90C O-22Mâ

    FQPF10N60CF

    Abstract: FQP10N60C FQP10N60CF FQPF10N60C
    Text: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N60CF FQPF10N60CF FQPF10N60CF FQP10N60C FQPF10N60C

    FQPF8N60CFT

    Abstract: FQPF8N60CF
    Text: FRFET TM FQPF8N60CF 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF8N60CF FQPF8N60CFT FQPF8N60CF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF20N06L

    Untitled

    Abstract: No abstract text available
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N50CF FQPF10N50CF FQPF10N50CF