IN-4001 maximum voltage
Abstract: in 4004 IN4007
Text: G eneral V S e m ic o n d u c t o r 1N4001 thru 1N ti General Purpose Plastic Rectifier 50 to 1000V 1.0A Reverse Voltage Forward Current Features_ • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Construction utilizes void-free molded plastic technique
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1N4001
MIL-STD-750,
IN-4001 maximum voltage
in 4004
IN4007
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PK-105081-001
Abstract: 105081-2001 Molex-3 SD-105081-001 105081-0001 miniDP PS-105081-001 06Customer 105-0810-001 12001-0
Text: 10 NO TES: 1. M A T E R IA L : 1.1. P L A S T IC : N Y L O N PAY6, U L94V-2, CO LO R: B L A C K . H A L O G E N 1.2 IN S E R T FREE. MOLDING: LCR, U L 9 A V - 0 . 1.3. T E R N IN A L : C O P P E R A L L O Y . U . S H IE L D S H E L L : S T A IN L E S S STEEL.
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PK-105081-002
PK-105081-001
SD-105081-002
PK-105081-001
105081-2001
Molex-3
SD-105081-001
105081-0001
miniDP
PS-105081-001
06Customer
105-0810-001
12001-0
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BUK856-4001Z
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-4001Z Protected Logic-Level IGBT_ _ _ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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BUK856-4001Z
T022QAB
BUK856-400
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delay line kappa
Abstract: Kappa Networks kappa Delay Line
Text: KAPPA NETWORKS INC 01 D E | S0V55UU UUUUdWJ. d SERIES DP24C ANALOG 20-TAP 24-PIN DIP DELAY LINE available in full-MIL conform ance as Series DP24M TABLE I 20051 40051 60051 80051 10151 20151 20012 40012 60012 80012 10112 20112 30112 40112 50112 60112 80112
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DP24C
20-TAP
24-PIN
DP24M)
100ppm/Â
50VDC
50VDC
DP24CB-40112B,
100-ohm
delay line kappa
Kappa Networks
kappa Delay Line
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PDF
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I2C Specification
Abstract: the I2c-bus specification SCC68070 Bi-directional level shifter for I2C-bus and other systems PHILIPS colour television schematic 14 OM4151 OM5027 philips master replacement guide 80C51 core instructions quick reference OM1022
Text: THE I2C-BUS SPECIFICATION VERSION 2.1 JANUARY 2000 document order number: 9398 393 40011 Philips Semiconductors The I2C-bus specification 13.4 13.5 CONTENTS 1 PREFACE . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.1 1.2 1.3 1.4 Version 1.0 - 1992. . . . . . . . . . . . . . . . . . . .
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AN96040
ETV8835
AN97055
OM5500
PCF2166
PCD3756A
I2C Specification
the I2c-bus specification
SCC68070
Bi-directional level shifter for I2C-bus and other systems
PHILIPS colour television schematic 14
OM4151
OM5027
philips master replacement guide
80C51 core instructions quick reference
OM1022
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PDF
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d1191
Abstract: 400-12E4 ic equivalent MID 400 MII400-12E4 ZY180L 0002K MJ50150
Text: MII 400-12E4 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Module phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 MID 400-12E4T 3 T1 11 D2 2 10 1 T2 T2 11 3 T1 D1 1 9 MDI 400-12E4 3 D1 8 MID 400-12E4(T) MDI 400-12E4
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400-12E4
400-12E4T
400-12E4
MII400-12E4
d1191
ic equivalent MID 400
MII400-12E4
ZY180L
0002K
MJ50150
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ZY180L
Abstract: zy180r 600V 300A igbt dc to dc power supply ic equivalent MID 400 thermal simulation of IC package MII400-12E4
Text: MII 400-12E4 MID 400-12E4 MDI 400-12E4 IGBT Module phaseleg and chopper topolgies 3 T1 3 1 9 D2 11 2 10 1 T2 T2 8 D11 9 1 D12 11 D2 2 10 MII 3 T1 D1 D1 8 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V 2 MID MDI Features IGBTs T1-T2 • NPT3 IGBT Symbol Conditions
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400-12E4
MII400-12E4
ZY180L
zy180r
600V 300A igbt dc to dc power supply
ic equivalent MID 400
thermal simulation of IC package
MII400-12E4
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components S9015-B S9015-C S9015-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation.
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S9015-B
S9015-C
S9015-D
45Watts
-55OC
S9015
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S9014C
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components S9014-B S9014-C S9014-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.
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S9014-B
S9014-C
S9014-D
-55OC
S9014
S9014C
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S9015D
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components S9015-B S9015-C S9015-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation.
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S9015-B
S9015-C
S9015-D
45Watts
-55OC
S9015
S9015D
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components S9014-B S9014-C S9014-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.
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S9014-B
S9014-C
S9014-D
-55OC
S9014
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mmbt9014
Abstract: MMBT9014G MMBT9015
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 Lead-free: MMBT9014L Halogen-free:MMBT9014G
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MMBT9014
450mW)
MMBT9015
MMBT9014L
MMBT9014G
MMBT9014-x-AE3-R
MMBT9014L-x-AE3-R
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
mmbt9014
MMBT9014G
MMBT9015
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MMBT9014
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Lead Free
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MMBT9014
450mW)
MMBT9015
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
MMBT9014
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES 1 * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9015 ORDERING INFORMATION Ordering Number Package Lead Free
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450mW)
9014L-x-T92-B
9014G-x-T92-B
9014L-x-T92-K
9014G-x-T92-K
QW-R201-031
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"WORM"
Abstract: No abstract text available
Text: P H IL IP S 41E IN T E R N A T IO N A L i> m 711002b oosm b? IPHIN T PI W APR 0 3 1990 F - t t - V z . 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 CQL71A Medium power collimator pen FEATURES OPERATIONAL HAZARD - SEMICONDUCTOR LASER DIODE
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711002b
CQL71A
"WORM"
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D40D
Abstract: D40D5 D40D10 D40D8 D4001 D40D14 D40D7...8 D40D11 D40D13 D40D2
Text: Silicon Power Tab Transistors “ COLOR MOLDED” The General Electric D 40D is a brow n, silicone plastic encapsulated, pow er transistor designed for various specific and general purpose applications, such as: output and driver stages o f amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and
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pin DIAGRAM OF IC 7486
Abstract: pin diagram of 7486 IC IC 7486 pin diagram IC 7486N 7486N block diagram for ic 7486 function OF IC 7486 function table IC 7486 7486 ic diagram connection diagram IC 7486
Text: S E M IC O N D U C T O R tm DM7486 Quad 2-Input Exclusive-OR Gates General Description Features This device contains fo u r independent gates each of w hich perform s the logic exclusive-O R function. • Alternate M ilitary/Aerospace device 5486 is available,
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DM7486
DS006531
5486D
5486FM
5486J,
7486N
pin DIAGRAM OF IC 7486
pin diagram of 7486 IC
IC 7486 pin diagram
IC 7486N
block diagram for ic 7486
function OF IC 7486
function table IC 7486
7486 ic diagram
connection diagram IC 7486
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PT331
Abstract: pt331c
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive
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PT331C
PT331C
NoDPT-033-001
date07-19-2004
PT331
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PT334-6C
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C-27 Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C-27 is a high speed and high sensitive silicon
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PT334-6C-27
PT334-6C-27
NoDPT-033-136
date07-20-2005
PT334-6C
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PT333-3C
Abstract: PT333 10secs-5mins
Text: Technical Data Sheet 5mm Phototransistor T-1 PT333-3C Features ․Fast response time ․High photo sensitivity ․Pb free ․This product itself will remain within RoHS compliant version. Descriptions ․PT333-3C is a high speed and high sensitive NPN silicon
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PT333-3C
PT333-3C
NoCDPT-033-008
date2005/7/24
PT333
10secs-5mins
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C is a high speed and high sensitive silicon
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PT334-6C
PT334-6C
DPT-033-059
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PDF
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PT331C
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ
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PT331C
PT331C
NoDPT-033-001
date07-20-2005
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PDF
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PT334-6C
Abstract: pt334
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C is a high speed and high sensitive silicon
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PT334-6C
PT334-6C
NoDPT-033-059
date07-20-2005
pt334
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features Fast response time High photo sensitivity Pb free The product itself will remain within RoHS compliant version. Descriptions PT334-6C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5
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PT334-6C
PT334-6C
DPT-033-059
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