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    FSJ9260D3 Search Results

    FSJ9260D3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSJ9260D3 Fairchild Semiconductor 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSJ9260D3 Intersil 27A, -200V, 0.130 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSJ9260D3 Datasheets Context Search

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    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSJ9260D, FSJ9260R -200V, Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSJ9260D, FSJ9260R -200V, 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    PDF FSJ9260D, FSJ9260R 1-800-4-HARRIS

    MIL-S-19500

    Abstract: 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF FSJ9260D, FSJ9260R -200V, MIL-S-19500 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1

    Untitled

    Abstract: No abstract text available
    Text: 33 M S FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Description Features • Z7A, -200V, r D S O N The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSJ9260D, FSJ9260R -200V, 36MeV/m 1-800-4-HARRIS

    SM81A

    Abstract: No abstract text available
    Text: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSJ9260D, FSJ9260R -200V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; SM81A

    Untitled

    Abstract: No abstract text available
    Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 27A, -200V, rDS 0 N = 0.130£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSJ9260D, FSJ9260R -200V, varietyTO-254AA MIL-S-19500