Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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FSJ9260D,
FSJ9260R
-200V,
Rad Hard in Fairchild for MOSFET
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PDF
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1E14
Abstract: 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSJ9260D,
FSJ9260R
-200V,
1E14
2E12
FSJ9260D
FSJ9260D1
FSJ9260D3
FSJ9260R
FSJ9260R1
Rad Hard in Fairchild for MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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FSJ9260D,
FSJ9260R
1-800-4-HARRIS
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PDF
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MIL-S-19500
Abstract: 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSJ9260D,
FSJ9260R
-200V,
MIL-S-19500
1E14
2E12
FSJ9260D
FSJ9260D1
FSJ9260D3
FSJ9260R
FSJ9260R1
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PDF
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Untitled
Abstract: No abstract text available
Text: 33 M S FSJ9260D, FSJ9260R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Description Features • Z7A, -200V, r D S O N The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9260D,
FSJ9260R
-200V,
36MeV/m
1-800-4-HARRIS
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PDF
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SM81A
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9260D,
FSJ9260R
-200V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
SM81A
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 27A, -200V, rDS 0 N = 0.130£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9260D,
FSJ9260R
-200V,
varietyTO-254AA
MIL-S-19500
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PDF
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