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    FUJITSU L-BAND POWER FETS Search Results

    FUJITSU L-BAND POWER FETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU L-BAND POWER FETS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GSC371BAL2000

    Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
    Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band


    Original     		1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band PDF

    Untitled

    Abstract: No abstract text available
    Text: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general


    OCR Scan     		02MH-14 FLK102MH-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general


    OCR Scan     		FLK012WF FLK012WF PDF

    Untitled

    Abstract: No abstract text available
    Text: F|.fjU,. FLX102MH-12 X-Ku Band Power GaAs FETs r U J I I ->U FEATURES • • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION


    OCR Scan     		FLX102MH-12 FLX102M 02MH-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-18DA FI f e l l J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: = 10.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po =31.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM3742-18DA -45dBc 3742-18D PDF

    Untitled

    Abstract: No abstract text available
    Text: ifïW l FLM3742-4E PI I r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: = 12dB (Typ.) High PAE: riadd = 34% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM3742-4E 36dBm -45dBc 25dBm 3742-4E PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-2 co FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: riadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed


    OCR Scan     		FLM1414-2 PDF

    fujitsu l-band power fets

    Abstract: fujitsu gaas fet L-band
    Text: p. .<¡2 .,. FLL31OIQ-3 r UJ11 bU L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 30W Excellent Linearity Suitable for class A and class AB operation. High PAE: 40%. DESCRIPTION The FLL31 OIQ-3 is a 30 Watt GaAs FET that employs a push-pull design which


    OCR Scan     		FLL310IQ-3 FLL31OIQ-3 26dBm 24dBm fujitsu l-band power fets fujitsu gaas fet L-band PDF

    FLM6472-25D

    Abstract: No abstract text available
    Text: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM6472-25DA 44dBm -45dBc 32dBm Te298 FLM6472-25D PDF

    37MT3

    Abstract: No abstract text available
    Text: FLM1011-6F Fuffrsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM1011-6F -45dBc 25dBm FLM1011-6F 37MT3 PDF

    1414-6F

    Abstract: 2620D 14K4
    Text: FLM1414-6F FUJITSU Internally M atched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed


    OCR Scan     		FLM1414-6F 1414-6F 2620D 14K4 PDF

    FUJITSU XBAND

    Abstract: FLX207MH-12 fujitsu gaas fet
    Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX207M H-12 is a pow er G aAs FET that is designed for general


    OCR Scan     		FLX207MH-12 FLX207MH-12 FCSI0598M200 FUJITSU XBAND fujitsu gaas fet PDF

    Untitled

    Abstract: No abstract text available
    Text: F, , FLM4450-8E J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 32% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM4450-8E 39dBm -45dBc 28dBm Ambi148 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general


    OCR Scan     		FLK057WG FLK057WG FCSI0598M200 PDF

    fujitsu gaas fet

    Abstract: FLK207MH-14 L to Ku band GaAs
    Text: FLK207MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r iadd = 27%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK207MH-14 is a power GaAs FET that is designed for general


    OCR Scan     		FLK207MH-14 FLK207MH-14 FCSI0598M200 fujitsu gaas fet L to Ku band GaAs PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-25DA UJ11bU 44dBm -45dBc 32dBm 5964-25D PDF

    FLM5964-12DA

    Abstract: No abstract text available
    Text: F, , FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-12DA 41dBm -45dBc 30dBm FLM5964-12DA PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		FLM7785-4C 36dBm FLM7785-4C FLM7177-18DA PDF

    FLK107MH-14

    Abstract: FLK102MH-14 fujitsu gaas fet
    Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general


    OCR Scan     		FLK107MH-14 FLK102MH-14 FCSI0598M200 FLK107MH-14 fujitsu gaas fet PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7177-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		FLM7177-4C 36dBm 7177-4C PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    GaAs FETs

    Abstract: No abstract text available
    Text: FLM6472-8D F| «e . r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz


    OCR Scan     		FLM6472-8D 39dBm -45dBc 28dBm FLM6472-8D Temperature31 GaAs FETs PDF

    Untitled

    Abstract: No abstract text available
    Text: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		FLM5964-18DA -45dBc 5964-18D Drain-40 PDF

    FLM4450-18DA

    Abstract: No abstract text available
    Text: F, , FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM4450-18DA -45dBc FLM4450-18DA PDF