Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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MGFS45V2527
Abstract: f1270
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7
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MGFS45V2527
MGFS45V2527
-45dBc
f1270
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MGFS45V2123
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3
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MGFS45V2123
MGFS45V2123
-45dBc
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MGFS45V2325
Abstract: 2.4 GHZ 30W AMPLIFIER CIRCUIT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5
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MGFS45V2325
MGFS45V2325
-45dBc
2.4 GHZ 30W AMPLIFIER CIRCUIT
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F A 505
Abstract: MGFC45V5053A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5053A 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25
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MGFC45V5053A
25GHz
MGFC45V5053A
25GHz
-45dBc
160mA
Item-51
F A 505
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fet data book free download
Abstract: MGFC45V5964A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5964A 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9~6.4
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MGFC45V5964A
MGFC45V5964A
-42dBc
160mA
Item-51
10MHz
fet data book free download
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4433 fet
Abstract: F4535 high power FET transistor s-parameters MGFC42V3436 VDS-10
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3
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MGFC42V3436
MGFC42V3436
4433 fet
F4535
high power FET transistor s-parameters
VDS-10
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MGFC39V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
28dBm
10MHz
June/2004
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MGFC39V3436
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V3436
MGFC39V3436
28dBm
Oct-03
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MGFS45V2123A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2123A
MGFS45V2123A
079MIN.
25deg
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MGFC42V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V7785A
MGFC42V7785A
32dBm
10MHz
June/2004
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MGFC36V4450A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V4450A
MGFC36V4450A
25dBm
10MHz
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MGFC39V3742A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V3742A
MGFC39V3742A
28dBm
10MHz
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MGFC36V4450A
Abstract: MGFC36V4450
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V4450A
MGFC36V4450A
25dBm
10MHz
June/2004
MGFC36V4450
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MGFS45V2325A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
079MIN.
-45dBc
25deg
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V3742
MGFC42V3742
31dBm
10MHz
June/2004
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power
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MGFC2407A
MGFC2400
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M 1661 S
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power
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MGFC2415A
MGFC2400
150mA
M 1661 S
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mitsubishi f
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed
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MGFC36V7785A
MGFC36V7785A
--51D
45dBc
Item-01
Item-51
mitsubishi f
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GSO 69
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)
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MGFC36V6472A
MGFC36V6472A
45dBc
Item-01
Item-51
GSO 69
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12api
Abstract: 251C MGFC36V5964A
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically
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FC36V5964A
MGFC36V5964A
45dBc
ltem-01
10MHz"
12api
251C
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dssc
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET> MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.1 —'7.7GHz band am plifiers. The hermetically
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MGFC36V7177A
MGFC36V7177A
45dBc
Item-01
10MHz
dssc
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1-2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2123 is an internally impedance m atched GaAs power FET especially designed for use in 2.1 ~2.3
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MGFS45V2123
MGFS45V2123
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance m atched GaAs power FET especially designed for use in 2.3~2.5
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MGFS45V2325
MGFS45V2325
-45dBc
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