Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC36V5964A Search Results

    SF Impression Pixel

    MGFC36V5964A Price and Stock

    Mitsubishi Electric MGFC36V5964A-51

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange MGFC36V5964A-51 19
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    MGFC36V5964A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36V5964A Mitsubishi 5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC36V5964A Mitsubishi 5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC36V5964A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V5964A MGFC36V5964A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V5964A MGFC36V5964A -45dBc 25dBm

    MGFC36V5964A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5964A 5.9 ~ 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V5964A MGFC36V5964A 25dBm 10MHz

    MGFC36V5964A

    Abstract: 5.9 GHz power amplifier
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5964A 5.9 ~ 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V5964A MGFC36V5964A 25dBm 10MHz June/2004 5.9 GHz power amplifier

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original
    PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original
    PDF O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l

    12api

    Abstract: 251C MGFC36V5964A
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically


    OCR Scan
    PDF FC36V5964A MGFC36V5964A 45dBc ltem-01 10MHz" 12api 251C

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A P R E L » 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The


    OCR Scan
    PDF MGFC36V5964A MGFC36V5964A 96CTYP) 45dBc 10MHz'

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V5964A jy/HNA>By 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET g a rr-8 % DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically sealed metal - ceramic


    OCR Scan
    PDF MGFC36V5964A MGFC36V5964A 45dBc

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A fcflt Th« 8 f re*b'eC' 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz


    OCR Scan
    PDF MGFC36V5964A MGFC36V5964A

    5964 fet

    Abstract: MGFC36V5964A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5964A 5.9 ~ 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    OCR Scan
    PDF MGFC36V5964A MGFC36V5964A 25dBm June/2004 5964 fet

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


    OCR Scan
    PDF