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    GC4200 Price and Stock

    Eaton Cutler-Hammer RGC420032E (ALTERNATE: RGC420032E)

    RGC BKR, LSI 2000A | Eaton - Cutler Hammer RGC420032E
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    RS RGC420032E (ALTERNATE: RGC420032E) Bulk 2 Weeks 1
    • 1 $61408.16
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    • 100 $61408.16
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    • 10000 $61408.16
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    Eaton Cutler-Hammer RGC420033E (ALTERNATE: RGC420033E)

    RGC BKR, LS 2000A | Eaton - Cutler Hammer RGC420033E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS RGC420033E (ALTERNATE: RGC420033E) Bulk 2 Weeks 1
    • 1 $56932.35
    • 10 $56932.35
    • 100 $56932.35
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    • 10000 $56932.35
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    Eaton Cutler-Hammer RGC420033M (ALTERNATE: RGC420033M)

    RGC BKR, LS 2000A | Eaton - Cutler Hammer RGC420033M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS RGC420033M (ALTERNATE: RGC420033M) Bulk 2 Weeks 1
    • 1 $56932.35
    • 10 $56932.35
    • 100 $56932.35
    • 1000 $56932.35
    • 10000 $56932.35
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    Eaton Cutler-Hammer RGC420032M (ALTERNATE: RGC420032M)

    RGC BKR, LSI 2000A | Eaton - Cutler Hammer RGC420032M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS RGC420032M (ALTERNATE: RGC420032M) Bulk 2 Weeks 1
    • 1 $61408.16
    • 10 $61408.16
    • 100 $61408.16
    • 1000 $61408.16
    • 10000 $61408.16
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    GC4200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GC4200

    Abstract: GC4275 GC4270 GC4271 GC4272 GC4273 GC4274 RS20
    Text: TOC Control Devices HIGH SPEED PIN DIODES DESCRIPTION APPLICATIONS The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.


    Original     		PDF GC4200 GC4300, GC4400, GC4500 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 GC4270 GC4271 GC4272 GC4273 GC4274 RS20

    Untitled

    Abstract: No abstract text available
    Text: GC4210 – GC4275 TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant K EY FEAT U RES The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability


    Original     		PDF GC4210 GC4275 GC4200 18Ghz MIL-PRF-195

    GC4200

    Abstract: Types of Radar Antenna GC4210 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 RS20
    Text: Control Devices HIGH SPEED PIN DIODES APPLICATIONS DESCRIPTION The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		PDF GC4200 MIL-S-19500. GC4300, GC4400, GC4500 Types of Radar Antenna GC4210 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 RS20

    GC4210

    Abstract: GC4200 GC4270 GC4271 GC4272 GC4273 GC4275
    Text: GC4210 – GC4275 TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant KEY FEATURES The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability


    Original     		PDF GC4210 GC4275 GC4200 MIL-PRF-19500. GC4210 GC4270 GC4271 GC4272 GC4273 GC4275

    GC4510

    Abstract: ku band HIGH POWER ANTENNA SWITCH PIN DIODE GC4500 GC4511-00 GC4511 GC4512 GC4513 GC4530 GC4533 digital phase shifters
    Text: GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes TM RoHS Compliant KEY FEATURES The GC4500 series are high voltage, high power anode base NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device


    Original     		PDF GC4510 GC4533 GC4500 MIL-PRF-19500. 18Ghz GC45xx GC4510 ku band HIGH POWER ANTENNA SWITCH PIN DIODE GC4511-00 GC4511 GC4512 GC4513 GC4530 GC4533 digital phase shifters

    GC4430

    Abstract: digital phase shifters GC4410 GC4412 GC4432-30 gc4495 GC4400 GC4411 GC4413 GC4200
    Text: GC4410 – GC4495 TM CONTROL DEVICES – HIGH VOLTAGE PIN DIODES RoHS Compliant DESCRIPTION KEY FEATURES The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability


    Original     		PDF GC4410 GC4495 GC4400 18Ghz GC44xx GC4430 digital phase shifters GC4410 GC4412 GC4432-30 gc4495 GC4411 GC4413 GC4200

    Untitled

    Abstract: No abstract text available
    Text: GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4500 series are high voltage, high power anode base NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device


    Original     		PDF GC4510 GC4533 GC4500 MIL-PRF-19500. 18Ghz GC45xx

    GC4412

    Abstract: No abstract text available
    Text: Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		PDF GC4400 MIL-S-19500. GC4500, GC4200, GC4300 GC4412

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    GC4310

    Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
    Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant KEY FEATURES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		PDF GC4310 GC4375 GC4300 18Ghz GC4310 GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200

    LX1687

    Abstract: BAT54 GC4200 KV1400 LSP1004 LX1686 MRF5812 UPS120E UPS5817 inverter charging control circuit
    Text: Winter 2000 Issue Article Microsemi Solutions for Next Generation Mobile Phones Microsemi Corporation offers a variety of semiconductor products from its different divisions that are particularly well positioned for integration into mobile phone circuits.


    Original     		PDF UPS5817 UPS120E BAT54 LX1686 LX1687 OT-23 LX1687 GC4200 KV1400 LSP1004 LX1686 MRF5812 UPS120E inverter charging control circuit

    Untitled

    Abstract: No abstract text available
    Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		PDF GC4310 GC4375 GC4300 18Ghz

    GC4430

    Abstract: High Speed Switches GC4432-30 Types of Radar Antenna GC4400 GC4413 GC4410 GC4411 GC4412 GC4431
    Text: Semiconductor Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		PDF GC4400 MIL-S-19500. GC4500, GC4200, GC4300 GC4430 High Speed Switches GC4432-30 Types of Radar Antenna GC4413 GC4410 GC4411 GC4412 GC4431

    KV38S2

    Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731
    Text: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios


    Original     		PDF

    High Speed Switches

    Abstract: GC4412 digital phase shifters GC4400 GC4410 GC4411 GC4413 GC4430 GC4431 RS100
    Text: TOC Control Devices HIGH VOLTAGE PIN DIODES DESCRIPTION APPLICATIONS The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.


    Original     		PDF GC4400 MIL-S-19500. GC4500, GC4200, GC4300 High Speed Switches GC4412 digital phase shifters GC4410 GC4411 GC4413 GC4430 GC4431 RS100

    Untitled

    Abstract: No abstract text available
    Text: GC4410 – GC4495 TM CONTROL DEVICES – HIGH VOLTAGE PIN DIODES RoHS Compliant DESCRIPTION KEY FEATURES The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability


    Original     		PDF GC4410 GC4495 GC4400 18Ghz GC44xx

    GC4490

    Abstract: No abstract text available
    Text: Control Devices HIGH VOLTAGE PIN DIODES DESCRIPTION APPLICATIONS The GC4400 series are high voltage, high power cath­ ode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thou­


    OCR Scan     		PDF GC4400 GC4500, GC4200, GC4300 GC4490