Untitled
Abstract: No abstract text available
Text: GC4374-35 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 70 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.5 @If (A)20m Ct{Cj} Nom. (F) Junction Cap.0.4p Carrier Lifetime (S)70n @I(F) (test) (A)10m @I(R) (A) (Test Condition)6.0m
|
Original
|
PDF
|
GC4374-35
-10mA
|
Untitled
Abstract: No abstract text available
Text: GC4374-30 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 70 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.5 @If (A)20m Ct{Cj} Nom. (F) Junction Cap.0.4p Carrier Lifetime (S)70n @I(F) (test) (A)10m @I(R) (A) (Test Condition)6.0m
|
Original
|
PDF
|
GC4374-30
-10mA
|
GC4310
Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant KEY FEATURES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by
|
Original
|
PDF
|
GC4310
GC4375
GC4300
18Ghz
GC4310
GC4311
GC4371
GC4372
GC4373
GC4374
GC4375
GC4200
|
Untitled
Abstract: No abstract text available
Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by
|
Original
|
PDF
|
GC4310
GC4375
GC4300
18Ghz
|