GE NPN Search Results

GE NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
CA3083Z-G	Rochester Electronics LLC	CA3083 - General Purpose High Current NPN Transistor Array
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

GE NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ERN 1387 Abstract: heidenhain encoder ern 1387 U20N1K5S PLC S7 200 use encoder U20N0K7S U20N0K2S VAT200 U20X0K7S ACRP10A2H U20N0K4S Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical	Original	VAT20, VAT200, VAT300 VAT20 VAT200 H-1340 B-9000 C/4601/E/EX ERN 1387 heidenhain encoder ern 1387 U20N1K5S PLC S7 200 use encoder U20N0K7S U20N0K2S U20X0K7S ACRP10A2H U20N0K4S	PDF
70U15 Abstract: ge company 2N1311 ge npn Text: 2N1311 Ge NPN Lo-Pwr BJT 9.21 Transistors Transistors Bipolar Ge NPN Low-Power . Page 1 of 1 Enter Your Part # Home Part Number: 2N1311 Online Store 2N1311 Diodes Ge N PN Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	2N1311 2N1311 com/2n1311 70U15 ge company ge npn	PDF
ge-20 transistor Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams Text: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching	Original		PDF
ld photocoupler Abstract: KB826 KB826A KB826B KB826L M05A GE photocoupler Text: PHOTOCOUPLER KB826 GE NERAL PURPOSE HIG H ISOLATIO N VOLTA GE SING LE TRANSISTOR TYPE HIG H COLLECTOR VOLTA GE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso= 5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package	Original	KB826 KB826 E225308 DSAD1546 JUN/19/2003 ld photocoupler KB826A KB826B KB826L M05A GE photocoupler	PDF
2N326 Abstract: 35 A 35 V BJT Text: 2N326 Ge NPN Power BJT 9.88 Transistors Transistors Bipolar Ge NP. 1 of 1 Home Part Number: 2N326 Online Store 2N326 Diodes G e NPN Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N326 com/2n326 2N326 35 A 35 V BJT	PDF
2N356 Abstract: No abstract text available Text: 2N356 Ge NPN Lo-Pwr BJT 18.21 Transistors Transistors Bipolar Ge N. 1 of 1 Home Part Number: 2N356 Online Store 2N356 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N356 com/2n356 2N356	PDF
2N2426 Abstract: TRANSISTORS BJT list 40N25A 2N242 Text: 2N2426 Ge NPN Lo-Pwr BJT 7.00 Transistors Transistors Bipolar Ge N. 1 of 2 Home Part Number: 2N2426 Online Store 2N2426 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N2426 com/2n2426 2N2426 TRANSISTORS BJT list 40N25A 2N242	PDF
Bjt 547 Abstract: OF BJT 547 2N585 Text: 2N585 Ge NPN Lo-Pwr BJT 4.70 Transistors Transistors Bipolar Ge NP. 1 of 2 Home Part Number: 2N585 Online Store 2N585 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N585 com/2n585 2N585 Bjt 547 OF BJT 547	PDF
germanium transistors NPN Abstract: 2N1306 germanium NPN Text: 2N1306 Ge NPN Lo-Pwr BJT 7.63 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1306 Online Store 2N1306 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	2N1306 2N1306 com/2n1306 germanium transistors NPN germanium NPN	PDF
2n1304 Abstract: Low-Power Germanium NPN Text: 2N1304 Ge NPN Lo-Pwr BJT 2.90 Transistors Bipolar Germanium NPN Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1304 Online Store 2N1304 Diodes Ge N PN L o -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	2N1304 2N1304 com/2n1304 Low-Power Germanium NPN	PDF
PA12-GF30 Abstract: BC10-S30-VP4X-H1141 66-GF25-V0 44-T2 BC10-S30-AZ3X-B3131 BC10-S30-VN4X-H1141 BC10-S30-VN4X Text: Housing Style Part Number 30 mm - Embeddable, eurofast Connector BC10-S30-VN4X-H1141 ID Number M2506010 Features Comp. Outputs Em b Ran eddab l ge m e m No ne Ran mbe ge d. (m m) Capacitive Sensors - Barrels Output 10 15 4-Wire DC NPN BC10-S30-VP4X-H1141	Original	BC10-S30-VN4X-H1141 M2506010 BC10-S30-VP4X-H1141 M2506100 BC10-S30-AZ3X-B3131 BCF10-S30-AZ3X-B3131 M2310710 M2506012 BC10-S30-RZ3X-B3131 BCF10-S30-RZ3X-B3131 PA12-GF30 BC10-S30-VP4X-H1141 66-GF25-V0 44-T2 BC10-S30-AZ3X-B3131 BC10-S30-VN4X-H1141 BC10-S30-VN4X	PDF
BC20-K40SR-VP4X2 Abstract: 2wire BC20-K40SR-FZ3X2 4wire BC20-K40SR-VN4X2 BC20-K40SR-VN4X2 TURCK m16x1.5 M2502128 BC15-K34SR-FZ3X2 BC15-K34SR-VN4X2 Text: Housing Style 34 mm - Embeddable, Terminal Chamber Part Number BC15-K34SR-VN4X2 ID Number M2502128 Features Comp. Outputs Em b Ran eddab l ge m e m No ne Ran mbe ge d. (m m) TURCK Level Sensors - Capacitive Output 15 23 4-Wire DC NPN BC15-K34SR-VP4X2 M2502129	Original	BC15-K34SR-VN4X2 M2502128 BC15-K34SR-VP4X2 M2502129 BC15-K34SR-FZ3X2 M2310009 BC20-K40SR-VN4X2 /M16X1 M2510100 BC20-K40SR-VP4X2 2wire BC20-K40SR-FZ3X2 4wire BC20-K40SR-VN4X2 TURCK m16x1.5 M2502128 BC15-K34SR-FZ3X2 BC15-K34SR-VN4X2	PDF
b1052 Abstract: BCF10-S30-VN4X BCC10-S30-AP4X ABS GF30 turck 1-800-544-7769 PVDF M2503037 BC10-S30-Y1X Pa 6.6 gf30 BC10-S30-VN4X Text: Housing Style 30 mm - Embeddable, Potted-In Cable Part Number ID BCC10-S30-AP4X Features M2503037 Low Dielectric Targets Em b Ran eddab ge l mm e No ne Ran mbe ge d. (mm ) TURCK Level Sensors - Capacitive Output 10 3-Wire DC PNP BC10-S30-VN4X M2506000 Comp. Outputs	Original	BCC10-S30-AP4X M2503037 BC10-S30-VN4X M2506000 BCF10-S30-VN4X M2506011 BC10-S30-VP4X M2506110 BCF10-S30-VP4X M2506111 b1052 BCF10-S30-VN4X BCC10-S30-AP4X ABS GF30 turck 1-800-544-7769 PVDF BC10-S30-Y1X Pa 6.6 gf30 BC10-S30-VN4X	PDF
SC88 SOT363 plastic package Ht0 MARKING CODE Abstract: marking Ht0 sot363 HT0 SOT363 MARKING 5F SOT363 PUMH10 marking 301 Text: DISCRETE SEMICONDUCTORS DATA SHEET ge MBD128 PUMH10 NPN resistor-equipped transistors Product specification 2000 Aug 01 Philips Semiconductors Product specification NPN resistor-equipped transistors PUMH10 FEATURES • Transistors with built-in bias resistors R1 and R2	Original	MBD128 PUMH10 MAM438 613514/01/pp8 SC88 SOT363 plastic package Ht0 MARKING CODE marking Ht0 sot363 HT0 SOT363 MARKING 5F SOT363 PUMH10 marking 301	PDF

BF820W Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W FEATURES PINNING • Low current max. 50 mA	Original	M3D102 BF820W OT323 613514/04/pp6 BF820W	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W PINNING FEATURES • Low current max. 50 mA PIN	Original	M3D102 BF820W OT323 613514/04/pp6	PDF
GKD transistor Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)	Original	CHDTC115GKPT tp300uS; 100MHz GKD transistor	PDF
transistor C 639 W Abstract: bc736 transistor BC637 complement BC635 transistor 639 fa 506 BC637 BC639 TI 506 transistor I100O Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638f640 ABSOLUTE MAXIMUM RATINGS Ta= 250C Characteristic C o lle c to r E m itter V olta ge : at R Be = 1Kohm : : C o lle c to r E m itter V olta ge :	OCR Scan	BC635/637/639 BC635/638f640 BC635 BC637 BC639 transistor C 639 W bc736 transistor BC637 complement transistor 639 fa 506 BC637 BC639 TI 506 transistor I100O	PDF
2SD2105 Abstract: No abstract text available Text: HITACHI 2SD2105— -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25ÛC Item S ym bol Rating Unit C o lle cto r to base volta ge V CB0 120 V C o lle cto r to em itter voltage VCE0 120 V E m itter to base volta ge	OCR Scan	2SD2105- -220FM 2SD2105	PDF
Untitled Abstract: No abstract text available Text: MSC3130T1* CASE 318D-03, STYLE 1 CO LLEC TO R m M AXIM U M RATINGS TA = 2 5 C Rating C o lle c to r-B a s e V olta ge C o lle c to r-E m itte r V olta ge E m itte r-8 a s e V olta ge C o lle c to r C u rre n t-C o n tin u o u s Symbol Value Unit VCBO 15	OCR Scan	MSC3130T1* 318D-03, SC-59	PDF
ge-2 transistor Abstract: No abstract text available Text: M C C TO-92MOD Plastic-Encapsulate T r a n s is t o r s ^ ^ 2SC1627A TRANSISTOR NPN FEATURES T O - 9 2 M O D P cm : 0.8W (Tam b=25“C ) current 1.E M IT T E R Ic m : 0.4 A 2.C O L L E C T O R vo lta ge 3.B A S E V(BR)CBO: 80 V M d s to ra g e ju n ctio n tem perature ran ge	OCR Scan	O-92MOD 2SC1627A ge-2 transistor	PDF
SFT42 Abstract: C0076 Text: SOLI» STATE DEVICES INC . IS E D \|ö3t,bDll DDGEIME 5 \| T -2.7 -O I . Ge om et ry Popula r Part Numbers IP mA X RAD(SI)/ sec.Gamma VR* (Volts) Size»* (Inches) RAD* * * tested R EC TI FI ER S , R A D I A T I O N D E T E C T O R S ROOXF Ge om e t r y	OCR Scan	SPD1S11 UM9441 C006T C0069 C0068 C006U C007A C007E C0070 C0076 SFT42	PDF
transistor tip 30c Abstract: tip 30c equivalent TIP 29b tip 30c tip 30c transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B Com plem entary Silicon Plastic Power Transistors TIP29C PNP . . . designed for use in ge nera l purpose a m plifier and s w itching ap plication s. Compact T O -220 AB package. TIP30B MAXIMUM RATINGS TIP30C	OCR Scan	TIP29B TIP29C TIP30B TIP30C 100he transistor tip 30c tip 30c equivalent TIP 29b tip 30c tip 30c transistor	PDF
"to-98" package Abstract: 2N5172 Text: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 \| T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a	OCR Scan	2N5172, MPS5172, PN5172, 2N6076 PN5172 obser10V, "to-98" package 2N5172	PDF

GE NPN Search Results

GE NPN Result Highlights (5)

GE NPN Datasheets Context Search

ERN 1387

70U15

ge-20 transistor

ld photocoupler

2N326

2N356

2N2426

Bjt 547

germanium transistors NPN

2n1304

PA12-GF30

BC20-K40SR-VP4X2

b1052

SC88 SOT363 plastic package Ht0 MARKING CODE

BF820W

Untitled

GKD transistor

transistor C 639 W

2SD2105

Untitled

ge-2 transistor

SFT42

transistor tip 30c

"to-98" package