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    GE SB1 Search Results

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    Texas Instruments TUSB1002AIRGET

    USB Interface IC USB3.2 10 Gbps Dual-channel Linear Redriver 24-VQFN -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TUSB1002AIRGET 9,858
    • 1 $7.43
    • 10 $6.73
    • 100 $5.17
    • 1000 $4.14
    • 10000 $4.14
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    Texas Instruments TUSB1002ARGER

    USB Interface IC USB3.2 10 Gbps Dual-channel Linear Redriver 24-VQFN 0 to 70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TUSB1002ARGER 2,625
    • 1 $6.57
    • 10 $5.58
    • 100 $4.84
    • 1000 $3.48
    • 10000 $2.45
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    Texas Instruments TUSB1002RGER

    USB Interface IC USB3.1 10Gbps Dual Channel Linear Redriver 24-VQFN 0 to 70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TUSB1002RGER 1,152
    • 1 $3.91
    • 10 $3.51
    • 100 $3.22
    • 1000 $3.07
    • 10000 $3.05
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    Texas Instruments TUSB1002RGET

    USB Interface IC USB3.1 10Gbps Dual Channel Linear Redriver 24-VQFN 0 to 70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TUSB1002RGET 422
    • 1 $7.08
    • 10 $6.39
    • 100 $5.29
    • 1000 $4.01
    • 10000 $4.01
    Buy Now

    Texas Instruments TUSB1002AIRGER

    USB Interface IC USB3.2 10 Gbps Dual-channel Linear Redriver 24-VQFN -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TUSB1002AIRGER
    • 1 $6.04
    • 10 $5.43
    • 100 $4.44
    • 1000 $3.19
    • 10000 $3.03
    Get Quote

    GE SB1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Electroswitch series 24

    Abstract: Electroswitch series 24203B electroswitch 2438D 24204B electroswitch electroswitch 74202B 24203B Electroswitch 2404C Electroswitch 24206B electroswitch 24204
    Text: 06-464 Cross Reference List 5/1/07 2:46 PM Page 1 CROSS REFERENCE LIST GE Series SB1 to Electroswitch Series 24 SWITCHES AND RELAYS Use this cross reference list to identify the correct Electroswitch Series 24 switch to replace a GE SB1 Series switch. Don’t see your GE Series switch in the list – contact


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    PDF 16SB1A1 2428D 16SB1CA24 2415C 16SB1CG7 24204B 16SB1AA1 2427D 16SB1CA25 2414C Electroswitch series 24 Electroswitch series 24203B electroswitch 2438D 24204B electroswitch electroswitch 74202B 24203B Electroswitch 2404C Electroswitch 24206B electroswitch 24204

    marking w25 SMD

    Abstract: TRANSISTOR SMD MARKING CODE W25 smd marking g23 SMD CODE w25 SMD MARKING CODE E1H smd w25 66 2310 dhi TOP 242 PN SMD TRANSISTOR MARKING 9b marking g23 SMD
    Text: Da ta Sh ee t, D S 1, D ec em be r 20 01 ABM 3G A T M B uf f e r M a na ge r P XF 4 33 3 V e r s i on 1 . 1 W ir ed Co m mu n ic a ti o n s N e v e r s t o p t h i n k i n g . Edition 2001-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


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    PDF D-81541 marking w25 SMD TRANSISTOR SMD MARKING CODE W25 smd marking g23 SMD CODE w25 SMD MARKING CODE E1H smd w25 66 2310 dhi TOP 242 PN SMD TRANSISTOR MARKING 9b marking g23 SMD

    PCR 406 J

    Abstract: marking w25 SMD transistor pcr 406 TRANSISTOR SMD MARKING CODE W25 SMD TRANSISTOR MARKING P2 PCR 406 J transistor smd marking K23 transistor pcr 405 Motorola transistor smd marking codes marking g23 SMD
    Text: Da ta Sh ee t, D S 2, D ec em be r 20 01 A B M P r e mi um A T M B uf f e r M a na ge r P XF 4 33 6 V e r s i on 1 . 1 W ir ed Co m mu n ic a ti o n s N e v e r s t o p t h i n k i n g . Edition 2001-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


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    PDF D-81541 PCR 406 J marking w25 SMD transistor pcr 406 TRANSISTOR SMD MARKING CODE W25 SMD TRANSISTOR MARKING P2 PCR 406 J transistor smd marking K23 transistor pcr 405 Motorola transistor smd marking codes marking g23 SMD

    Untitled

    Abstract: No abstract text available
    Text: SB120 THRU SB160 MINIATURE SCHOTTKY BARRIER RECTIFIER VOLTA GE RANGE - 20 to 60 Volts CURRENT -1.0 Ampere FEATURES DO-2Q4AL 1. 0 2 5 .4 MIN . 107 ( 2 ,7 ) .080 ( 2 .0 ) . 205 ( 5 .2 ) . 160 ( 4 .1 ) _ t _ 1.0 ( 2 5 .4 ) WIN •034 ( . 8 6 ) .028 (. 7 1 )


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    PDF SB120 SB160

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    Untitled

    Abstract: No abstract text available
    Text: HOLTEK r r HT7501 Clinical Thermometer Features • • • • • • • • • Single-chip CM O S construction Single 1.5V battery operation M easurem en t ran ge: +32.00°C —1-43.00°C M easurem en t accuracy: ±0.1°C Resolution: 0.01°C Auto self-test


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    PDF HT7501 T7501

    OW14

    Abstract: No abstract text available
    Text: fax id: 1082 CY7C1049 512K x 8 Static RAM is provided by an active LOW chip enable CE , an active LOW output enable (OE), and three-state drivers. Writing to the de­ vice is accomplished by taking chip enable (GE) and write en­ able (WE) inputs LOW. Data on the eight I/O pins (l/O0 through


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    PDF CY7C1049 400uW OW14

    P-8388

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs P R E L IM IN A R ^ ^ . ± nt Ä c U o % a n ge. M5M29KB/T800AVP 8,388,608-BIT 1048,576-WORD BY 8-BIT 1524,288-WORD BY16-BIT CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29KB/T800AVP Is 5.0V-only high speed 8,388,608-bit CMOS boot block Flash Memories with


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    PDF M5M29KB/T800AVP 608-BIT 576-WORD 288-WORD BY16-BIT) M5M29KB/T800AVP 608-bit 48P3E-B P-8388

    wiom

    Abstract: wiom DC SB156 SS101
    Text: BRIIXIE RECTIFIERS 1A • 1.5A • 2A • 3A • 4A • 6A • 8A • 10A • 15A • 26A M aximum Peak Reverse V o lta ge Max A vg Rect C urrent @ H alf-W ave Res Load 60Hz M axim um Forward Peak Surge C urrent @ 8 3ms Superim posed M axim um Reverse C urrent


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    PDF D6104 W005M 2W005M 2W01M 2W02M 2W04M 2W06M 2W08M 2W10M KBPC10 wiom wiom DC SB156 SS101

    transistor FB 260N

    Abstract: AC122 AC122-30 2SA479 2SA208 GT123 2N384 AF185 SFT155 XA131
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 transistor FB 260N AC122 AC122-30 2SA479 2SA208 GT123 2N384 AF185 SFT155 XA131

    2N1103

    Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    AC122-30

    Abstract: AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF B170024 4000n AC122-30 AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM23V81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 8 1 0 0 D (E )T is a fu lly static m ask p ro gra m m a ble S w itch a b le organ izatio n 1,048,576 x 8 (b yte m ode) 5 24,288 x 1 6(w ord m ode)


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    PDF KM23V81 /512Kx16) 100ns 120ns 30/25m

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM23V16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 1 6 0 0 0 C (E )T is a fu lly static m ask pro gra m m a ble S w itch a b le organ izatio n 2,0 97,15 2 x 8 (b yte m ode) 1,048,576 x 1 6(w ord m ode)


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    PDF KM23V16000C 16M-Bit /1Mx16) 120ns 150ns 30/25m 44-TS 0P2-400F 44-TSOP2-400R 003b2SB

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    8512A

    Abstract: No abstract text available
    Text: HM62V8512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-642 Z Preliminary Rev. 0.0 Sep. 30, 1996 Description The Hitachi HM62V8512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 |lm Hi-CMOS process


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    PDF HM62V8512A 524288-word ADE-203-642 512-kword 525-mil 400-mil 8512A

    Untitled

    Abstract: No abstract text available
    Text: HN62448 Series 524288-word x 16-bit / 1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-397A Z Rev. 1.0 Jun. 13, 1995 Description The Hitachi HN62448 is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. Realizing low power consumption, this memory is allowed for battery


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    PDF HN62448 524288-word 16-bit 1048576-word ADE-203-397A 524288-words 16-bits 1048576-words

    Untitled

    Abstract: No abstract text available
    Text: HM671400H Series 4,194,304-words x 1-bit High Speed Static Random Access Memory HITACHI ADE-203-086G Z Rev. 8 Aug. 28, 1996 Features • 4194304-words x 1 bit organization • Directly TTL compatible input and output • +5.0 V Single Supply • Completely static memory


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    PDF HM671400H 304-words 4194304-words ADE-203-086G D-85622

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM23V32000B E TY/KM23S32000B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 4 ,1 9 4 ,3 0 4 x 8(b yte m ode) 2,0 97,152 x 16(w ord m ode) Fast access tim e Random A ccess T im e


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    PDF KM23V32000B TY/KM23S32000B 32M-Bit /2Mx16) 100ns

    Untitled

    Abstract: No abstract text available
    Text: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby iS O S ^m a x.)


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    PDF KM23V4200D 256Kx16) 4200D 40-DIP-600C

    Untitled

    Abstract: No abstract text available
    Text: CXK5V8257BTM/BYM/BM -70LL/10LL SO NY 32,768-word x 8-bit High Speed CMOS Static RAM Description The CXK5V8257BTM/BYM/BM is a 262,144-bit high speed CMOS static RAM organized as 32,768-words-by8-bits. A polysilicon TFT cell technology realizes extremely low stand-by current and higher data retention stability.


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    PDF CXK5V8257BTM/BYM/BM -70LL/10LL 768-word 144-bit 768-words-by8-bits. CXK5V88257BTM/BYM/BM CXK5V8257BTM CXK5V8257BYM TSOP-28P-L01

    ne 5555 timer

    Abstract: No abstract text available
    Text: Lj 3 E ì> ñin233 ÜG03Ô2E S14 « S E E SEEÛ TECHNOLOGY INC Technology, Incorporated 1024K High Speed EEPROM Ju ly 1992 Features • Military, Extended and Commercial Temperature Rangea • -S 5°C to +125°C Operation Military • -4 0 °C to +85°C Operation (Extended)


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    PDF in233 1024K 28C010) 28C010H) 120nsec 400103/A ne 5555 timer

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY KM29W8000T, KM29W8000IT Document Title 1M X 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 D ata S h e e t 1997 A pril 10th 1997 A d va n ce 1.0 D ata S h e e t 1998 A pril 10th 1998 P relim in ary J u ly 14th 1998


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    PDF KM29W8000T, KM29W8000IT