GES5812 Search Results

GES5812 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
GES5812	General Electric	Semiconductor Data Handbook 1977	Scan	PDF
GES5812	General Electric	Planar passivated epitaxial NPN Silicon Transistor. 25V, 750mA.	Scan	PDF
GES5812	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
GES5812	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GES5812	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
GES5812	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GES5812-J1	Central Semiconductor	Small Signal Transistors	Original	PDF
GES5812-J1	Central Semiconductor	Small Signal Transistors TO-92HS Case	Scan	PDF

GES5812 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3480 Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849	Original	E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712	PDF
GES5812 Abstract: intermediat GES5810 GES5811 GES5813 Text: G E SOLID STATE 3 8 75 0 8 1 G E 01 SOLID STATE DËfJ 3Ô7SDÔ1 Gai?1!?! â 01E 17971 T D - Z s ? - ¿ .3 - Signal Transistors GES5810, GES5811, GES5812, GES5813	OCR Scan	GES5810, GES5811, GES5812, GES5813 GES5812 GES5811 GES5813 intermediat GES5810	PDF
c 337 25 Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451 Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3	OCR Scan		PDF
GES5822 Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 GES6001 GES6002	PDF
2N3903 Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401	PDF
2N4123 pnp silicon Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520	PDF
mhb 7001 Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220	PDF
ES5448 Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 10m A V Min. 1 60 II 6040 • m 40 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 NPft GES5828 NP» GES6000 NM GES6001 m p GES6002 u n 40 40 25 25 25 GES6003 GES6004	OCR Scan	to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6222 ES5448 GES6220	PDF
2N3901 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001	PDF
ES5448 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE b v ceo Device Type @ 10m A V Min. 1I •I m V C E(sat) Max. @ lc(m A ) GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 60 60 40 40 40 00 00 60 00 «0 200 200 120 200 300 2 ■ M M	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5824 GES5825 ES5448 GES6001	PDF
ERF 2030 Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @10mA V Min. 1 II • m fT Ccb @ 10V - Typical 1 MHz Continuous Max. @ lc (mA) (MHz) Typical (Pp) ImA) 'F E b v ceo Device V CE(sat) Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 -IN4I48 ERF 2030 GES6220	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
2N4425 Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306 Text: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)	OCR Scan	O-92HS 2n3402 2n3403 2n3404 2n3405 2n4425 hs3402 hs3403 ges6015-j1 ges6016-j1 GES6220-J1 GES6220 HS5306	PDF
TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C	PDF

mpsa65 Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 mpsa65 MPSA20	PDF
2n4125 equivalent Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent n4401	PDF
S5822 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo Type @ 10m A V Min. 1I •I m VCE(sat) ! BBI MM m m m Mm SM M em m m ■ HBm Ë K w SSsm BBB Mi MB Max. @ lc (m A ) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 S5822 GES6001	PDF
NPN switching transistor 2N4403 Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150mA, NPN switching transistor 2N4403 NPN transistor 2n 3904 transistor 2N 3904	PDF
GES6220 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 1 0 m A V Min. 1 60 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 200 200 120 200 300 40 40 25 25 25 50 00 00 OB 500 800 300 300	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5447 GES6220 GES6001	PDF
2N3906 JEDEC Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N3906 JEDEC 2N3906 hie 2N3905 Equivalent 2n3906 equivalent 2n3906 npn	PDF
GES5822 Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 60 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40LECTOR-BASE ges6007 GES6001 GES6002	PDF
2N3404 Abstract: 2N4425 2N3405 GES6220 GES6220-J1 HS5306 2N3402 2N3403 HS3402 HS3403 Text: CENTRAL S E ilIC O N D U C T O R L.5E » • n flT T b B 0000777 ObO ■ CEN Small Signal Transistors TO-92HS Case Pd @Tc =25°C =1 .OWatt TYPE NO. POLARITY BVc b O BVC e o b v e b o 0 lc h FE 'CBO « v CBO VCE v C E (S i iT) ® <C c ob <T NF LEAD CODE	OCR Scan	O-92HS 2N3402 2N3403 2N3404 2N3405 2N4425 HS3402 HS3403 GES6221-J1 GES6220 GES6220-J1 HS5306	PDF
2N4425 Abstract: No abstract text available Text: Small signal Transistors TO-92HS Case P q @ T q =250C =1 .OWatt TYPE NO. p o l a r it y b v c b o b v c e 0 e v EBO «CBD >vCBO (V) 00 <V) (nA) MIN MW ium MAX » lC h FE e v CÊ VCE(SA T) ® fC C0\|, *t NF LEAD CODE (V) (mA) MIN MAX 00 (V) (mA) MAX <pF> (MHz)	OCR Scan	O-92HS 2N3402 2N3403 2N3404 2N3405 2N4425 HS3402 HS3403 HS3404 HS3405	PDF
2n3904 409 Abstract: 2N4125 2N4126 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4400 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4I26 2n3904 409	PDF

Privacy Settings

GES5812 Search Results

GES5812 Datasheets (8)

GES5812 Datasheets Context Search

2N3480

GES5812

c 337 25

GES5822

2N3903

2N4123 pnp silicon

mhb 7001

ES5448

2N3901

ES5448

ERF 2030

EATON CM20A

2N4425

TRIAC 97A6

mpsa65

2n4125 equivalent

S5822

NPN switching transistor 2N4403

GES6220

2N3906 JEDEC

GES5822

2N3404

2N4425

2n3904 409