Untitled
Abstract: No abstract text available
Text: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The GM23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|
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23C8100
512Kx
16/IM
GM23C8100
576x8
D8-D14
D15/A-1
GM23C8100
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Untitled
Abstract: No abstract text available
Text: GM 23C 8100 GoldStar 5 1 2 K x 1 6 /IM GOLDSTAR ELECTRON CO., LTD. X 8 B IT C M O S M A SK R Ö M Description Pin Configuration The GM23C8100 high performance read only memory is organized either as 1,048,576x8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)
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GM23C8100
576x8
100pF-
GM23C8100
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Untitled
Abstract: No abstract text available
Text: W» LG Semicon. Co. LTD Description Pin Configuration The GM23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM23C8100A offers automatic power down controlled by
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GM23C8100A
wjA15
402fl757
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GM23C8100BFW
Abstract: 23C8100B
Text: @ LG Semicon. Co. LTD Description The GM23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The GM23C8100B offers automatic power down controlled by the mask
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GM23C8100B
120/15Qns.
IDA14
A0-A18
015/A-l
MD2B757
0004fl32
GM23C8100BFW
23C8100B
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Untitled
Abstract: No abstract text available
Text: GM23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The
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GM23C8100A
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NA-1335
Abstract: 42-pin D GM23C8100A
Text: GM23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)
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GM23C8100A
GM23C8100A
8/512K
402A757
NA-1335
42-pin D
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4170A
Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Text: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL
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GM71C1000B/BL
GM71C4256B/BL
GM71C4100B/BL
GM71C4100C/CL
71C41OOD/DL
71C4400B/BL
71C4400C/CL
71C4400D/DL
GM71C
800A/AL
4170A
mask ROM
Dynamic RAM 4M x 8
71C4400B
GM23C410
64K x 8 BIT DYNAMIC RAM
Dynamic RAM 64K x 1
static+ram+32kx8
STATIC+RAM+6264
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