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    GP 9V Search Results

    GP 9V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    P3LP-157L Coilcraft Inc Low Pass Filter, 150MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P3LP-604L Coilcraft Inc Low Pass Filter, 0.6MHz, ROHS COMPLIANT PACKAGE-3 Visit Coilcraft Inc
    P7LP-155L Coilcraft Inc Low Pass Filter, 1.5MHz, ROHS COMPLIANT PACKAGE-9 Visit Coilcraft Inc
    P7LP-507 Coilcraft Inc Low Pass Filter, 500MHz, SIP-9 Visit Coilcraft Inc Buy
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    GP 9V Price and Stock

    Microchip Technology Inc VN2222LL-G

    MOSFETs 60V 7.5Ohm
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    Mouser Electronics VN2222LL-G 15,843
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    Microchip Technology Inc VN0106N3-G

    MOSFETs 60V 3Ohm
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    Mouser Electronics VN0106N3-G 15,298
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    Microchip Technology Inc VP2106N3-G

    MOSFETs 60V 12Ohm
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    Mouser Electronics VP2106N3-G 11,086
    • 1 $0.57
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    Microchip Technology Inc VN0104N3-G

    MOSFETs 40V 3Ohm
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    Mouser Electronics VN0104N3-G 8,337
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    Microchip Technology Inc VN10KN3-G

    MOSFETs 60V 5Ohm
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    Mouser Electronics VN10KN3-G 4,945
    • 1 $0.6
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    GP 9V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7500 IC 14 PIN

    Abstract: earth leakage diagram scr drive circuit diagram M54134FP inverter SCR M54133FP SCR Inverter datasheet Zener Diode 4,7v 10 z M54134GP SSOP16-P-225-0
    Text: M54134FP/GP Earth Leakage Current Detector REJ03F0030-0100Z Rev.1.0 Sep.16.2003 Description The M54134FP/GP is a semiconductor integrated circuit developed for use in high-speed earth leakage breakers incorporating functions to protect against voltage surges and inverter noise.


    Original     		M54134FP/GP REJ03F0030-0100Z M54134FP/GP 7500 IC 14 PIN earth leakage diagram scr drive circuit diagram M54134FP inverter SCR M54133FP SCR Inverter datasheet Zener Diode 4,7v 10 z M54134GP SSOP16-P-225-0 PDF

    7500 IC 14 PIN

    Abstract: scr drive circuit diagram SCR control circuit 16-pin SCR Inverter datasheet SCR PIN CONFIGURATION Zener Diode 4,7v 10 z M54133FP M54133GP SSOP16-P-225-0 Nippon capacitors
    Text: M54133FP/GP Earth Leakage Current Detector REJ03F0029-0100Z Rev.1.0 Sep.16.2003 Description The M54133FP/GP is a semiconductor integrated circuit developed for use in high-speed earth leakage breakers incorporating functions to protect against voltage surges and inverter noise.


    Original     		M54133FP/GP REJ03F0029-0100Z M54133FP/GP 7500 IC 14 PIN scr drive circuit diagram SCR control circuit 16-pin SCR Inverter datasheet SCR PIN CONFIGURATION Zener Diode 4,7v 10 z M54133FP M54133GP SSOP16-P-225-0 Nippon capacitors PDF

    RD06HVF1

    Abstract: 100OHM RD06HVF1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		RD06HVF1 175MHz 175MHz RD06HVF1 100OHM RD06HVF1-101 PDF

    RD06HHF1-101

    Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-101 mosfet HF amplifier RD 15 hf mitsubishi 10Turns RD06HHF PDF

    overcharge protection circuit diagram ni mh

    Abstract: GP Batteries GP Ni-mh overdischarge protection circuit diagram ni mh GP Batteries NiMH 9v IEC61951-2 GP Batteries nimh backup use 1,2v Ni-MH battery overcharge protection circuit diagram pioneer circuit inc CONNECTOR 16 pin mitsumi pioneer
    Text: 8/F., Gold Peak Building, 30 Kwai Wing Road, Kwai Chung, N.T., Hong Kong Tel : 852 2484 3333 Fax : (852) 2480 5912 E-mail address : gpii@goldpeak.com Website : www.gpbatteries.com.hk SALES AND MARKETING BRANCH OFFICES ASEAN GP BATTERY MARKETING (SINGAPORE) PTE. LIMITED


    Original     		66rszawa, overcharge protection circuit diagram ni mh GP Batteries GP Ni-mh overdischarge protection circuit diagram ni mh GP Batteries NiMH 9v IEC61951-2 GP Batteries nimh backup use 1,2v Ni-MH battery overcharge protection circuit diagram pioneer circuit inc CONNECTOR 16 pin mitsumi pioneer PDF

    rd15hvf

    Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 rd15hvf RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9 PDF

    MAR 703 MOSFET TRANSISTOR

    Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346 PDF

    MAR 618 transistor

    Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231 PDF

    MAR 618 transistor

    Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET PDF

    GP 839 DIODE

    Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 PDF

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A PDF

    Untitled

    Abstract: No abstract text available
    Text: Carpark Configuration and Test Unit Type GP 7380 0080 Du line Fieldbus Installationbus • Portable Configuration and Test Unit • Configures the Carpark sensors GP622022xx • Configures the Carpark monitor GP34829091 • Monitors the status of Dupline® addresses


    Original     		GP622022xx GP34829091 12-key GP622022xx GP34829091. GP7380 PDF

    RD06HHF1

    Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-or RD06HHF1-101 RD06HHF 10TURNS 40gp0 PDF

    RD06HVF1

    Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFor Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE PDF

    murata vco

    Abstract: MITSUBISHI 560-2 toko coils 4.5mhz if variable coils toko toko coils 4.5mhz M61110FP V17L MITSUBISHI NFB Nippon capacitors
    Text: M61110FP/GP Coil-less VIF/SIF REJ03F0021-0200Z Rev.2.0 Mar.12.2004 Description M61110FP is a semiconductor integrated circuit consisting of VIF/SIF signal processing for CTVs and VCRs. M61110FP provides low cost and high performance system with the coil-less AFT


    Original     		M61110FP/GP REJ03F0021-0200Z M61110FP murata vco MITSUBISHI 560-2 toko coils 4.5mhz if variable coils toko toko coils 4.5mhz V17L MITSUBISHI NFB Nippon capacitors PDF

    rd16hhf1

    Abstract: RD16HHF1 application notes Rd16hhf
    Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.


    Original     		RD16HHF1 30MHz 30MHz RD16HHF1 RD16HHF1 application notes Rd16hhf PDF

    Untitled

    Abstract: No abstract text available
    Text: M61110FP/GP Coil-less VIF/SIF REJ03F0021-0200Z Rev.2.0 Mar.12.2004 Description M61110FP is a semiconductor integrated circuit consisting of VIF/SIF signal processing for CTVs and VCRs. M61110FP provides low cost and high performance system with the coil-less AFT


    Original     		M61110FP/GP REJ03F0021-0200Z M61110FP PDF

    GP Powerbank GPPB19

    Abstract: GPPB19 Powerbank GP Powerbank GP Batteries GPPB19 GP Powerbank universal battery charger Powerbank gppb19 AC INPUT 230V OUTPUT 9V 9000mAh MTBF BATTERY CHARGER
    Text: Product Specification Model No.: GPPB19 57.0 178.0 97.0 Unit : mm Product Name : GP PowerBank Universal Description : Universal battery charger with external adaptor Input Voltage : 230V AC 50Hz GS , 240V AC 50Hz (BS), 120V AC 60Hz (UL) Output Voltage : D/C/AA/AAA


    Original     		GPPB19 560mA 440mA 260mA 120mA 02050I05041 GP Powerbank GPPB19 GPPB19 Powerbank GP Powerbank GP Batteries GPPB19 GP Powerbank universal battery charger Powerbank gppb19 AC INPUT 230V OUTPUT 9V 9000mAh MTBF BATTERY CHARGER PDF

    SCR DRIVER

    Abstract: pin DIAGRAM OF IC 2407 M54133GP TRC2 M54133FP M54133 2407 get ic
    Text: MITSUBISHI <CONTROL / DRIVER IC> M54133FP/GP EARTH LEAKAGE CURRENT DETECTOR DESCRIPTION PIN CONFIGURATION TOP VIEW The M54133 is a semiconductor integrated circuit designed for high-speed type earth leakage breakers. This IC has built-in antilightning-surge function and anti-inverter-noise function.


    Original     		M54133FP/GP M54133 SCR DRIVER pin DIAGRAM OF IC 2407 M54133GP TRC2 M54133FP 2407 get ic PDF

    RD16HHF1

    Abstract: RD16HHF RD16HHF1 application notes RD16HHF1-101 RD16H PO-20W
    Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.


    Original     		RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-101 Oct2011 RD16HHF RD16HHF1 application notes RD16H PO-20W PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION OUTLINE DRAWING 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		RD01MUS2 520MHz 520MHz RD01MUS2 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		RD06HVF1 175MHz RD06HVF1 175MHz PDF

    S-AV8

    Abstract: No abstract text available
    Text: i TOSHIBA RF POWER AMPLIFIER MODULE_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Unit in mm VHF POWER AMPLIFIER MODULE HAM SSB/FM FEATURES : 2-Rai±a2 . Output Power : Po ^17W . Minimum Gain : Gp=19.2dB . Efficiency : 7x^40% . 50Q Input/Output Impedance


    OCR Scan     		1500pF, S-AV8 PDF

    S-AU4

    Abstract: No abstract text available
    Text: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU4 UHF POWER AMPLIFIER MODULE HAM SSB/FM Unit in non FEATURES: 2- R & l ± a 8 . Output Power P0ÏS 17W . Minimum Gain Gp=19.2dB . Efficiency


    OCR Scan     		PDF