Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM32EB31C476KE15p 1210, B, 47µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.3mm Code Packaging
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GRM32EB31C476KE15p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM32EB31C476KE15p 1210, B, 47µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.3mm Code Packaging
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GRM32EB31C476KE15p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors > Thin Layer Large Capacitance Type Data Sheet Monolithic Ceramic Capacitors GRM32EB31C476KE15p 1210, B, 47µF, 16Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.30mm Code
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GRM32EB31C476KE15p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM32EB31C476KE15p 1210, B, 47µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.3mm Code Packaging
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GRM32EB31C476KE15p
16Vdc)
180mm
330mm
16Vdc
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Untitled
Abstract: No abstract text available
Text: R1 2 4 5 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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EA-269-130322
R1245x
R1245
Room403,
Room109,
10F-1,
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Untitled
Abstract: No abstract text available
Text: R1 2 4 3 x SERI ES 30V Input 2A Buck DC/DC Converter NO.EA-206-111123 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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EA-206-111123
R1243x
Room403,
Room109,
10F-1,
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39E2527A
Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device
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MGFS39E2527A-01
39E2527A
30dBm
64QAM,
MGFS39E2527A
39E2527A
GRM155B11E103K
GRM155B11H102K
spectrum emission mask
MITSUBISHI Microwave
PW2100
GRM32EB31C476K
grm188B31E105K
metal detector plans
wimax spectrum mask
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bd9673
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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BD9673EFJ
12027ECT57
BD9673EFJ
R1120A
bd9673
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Untitled
Abstract: No abstract text available
Text: Datasheet Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulators with Built-in Power MOSFET BD9673AEFJ ●General Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type
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BD9673AEFJ
BD9673AEFJ
300kHz
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bd9876
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9876EFJ No.12027ECT58 ●Description Output 3.0A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9876EFJ
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BD9876EFJ
12027ECT58
BD9876EFJ
300kHz
R1120A
bd9876
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bd9876
Abstract: bd96
Text: BD9876EFJ Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9876EFJ No.12027ECT58 ●Description Output 3.0A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9876EFJ
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BD9876EFJ
12027ECT58
BD9876EFJ
300kHz
R1120A
bd9876
bd96
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HBT 01 05
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E3336-01
MGFS38E3336
64QAM,
IEEE802
16e-2005
0120sec
HBT 01 05
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E3336-01
MGFS38E3336
64QAM,
IEEE802
16e-2005
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Untitled
Abstract: No abstract text available
Text: Datasheet 6.0V～28V, 1.2A 1ch 1ch Step-Down Switching Regulator BD9E151NUX Key Specifications • Input Voltage ■ Ref. Precision Ta=25℃ ■ Max Output Current ■ Operating Temperature ■ Operating Junction Temperature General Description The BD9E151NUX is a 28V, 1.2A diode-rectification
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BD9E151NUX
BD9E151NUX
VSON008X2030
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Untitled
Abstract: No abstract text available
Text: Datasheet 6.0V～28V, 1.2A 1ch 1ch Step-Down Switching Regulator BD9E151NUX Key Specifications • Input Voltage ■ Ref. Precision Ta=25℃ ■ Max Output Current ■ Operating Temperature ■ Operating Junction Temperature General Description The BD9E151NUX is a 28V, 1.2A diode-rectification
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BD9E151NUX
BD9E151NUX
VSON008X2030
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Taiyo 93-R 503
Abstract: NR4018T land pattern hsop 8 nr4018 NR6020T4R7M Nippon capacitors 269111-1 R1245N001-TR-FE
Text: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-111130 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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R1245x
EA-269-111130
R1245
Room403,
Room109,
Taiyo 93-R 503
NR4018T
land pattern hsop 8
nr4018
NR6020T4R7M
Nippon capacitors
269111-1
R1245N001-TR-FE
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153 tss
Abstract: R1243S001-E2-FE GRM32EB31C476KE GRM32EB31C476K r1243
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-100512 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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R1243x
EA-206-100512
Room403,
Room109,
153 tss
R1243S001-E2-FE
GRM32EB31C476KE
GRM32EB31C476K
r1243
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bd9876
Abstract: No abstract text available
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9876EFJ No.11027EAT58 ●Description Output 3.0A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9876EFJ
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BD9876EFJ
11027EAT58
BD9876EFJ
300kHz
R1120A
bd9876
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R1243S001-E2-FE
Abstract: GRM32EB31C476KE R1243 NR6045T100M NR6028T GRM31CR71E106K UMK325BJ106MM-T grm32eb31c476ke15 R1243K001-TR
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-110406 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
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R1243x
EA-206-110406
Room403,
Room109,
10F-1,
R1243S001-E2-FE
GRM32EB31C476KE
R1243
NR6045T100M
NR6028T
GRM31CR71E106K
UMK325BJ106MM-T
grm32eb31c476ke15
R1243K001-TR
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Untitled
Abstract: No abstract text available
Text: BD9673EFJ Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9673EFJ No.12027ECT57 ●Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9673EFJ
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BD9673EFJ
12027ECT57
R1120A
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Untitled
Abstract: No abstract text available
Text: R1245x Series AEC-Q100 Grade 2 Certified 1.2 A, 30 V Step Down DC/DC Converter for Automotive Applications NO. EC-269-140311 OUTLINE The R1245x is a Step-down DC/DC converter with internal N-channel high side Tr. That is developed with CMOS process technology. The ON resistance of the built-in high-side transistor is 0.35 Ω and the R1245x can
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R1245x
AEC-Q100
EC-269-140311
Room403,
Room109,
10F-1,
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bd9876
Abstract: bd96 bd98 GRM32EB31C476K
Text: Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulator with Built-in Power MOSFET BD9876EFJ No.12027ECT58 ●Description Output 3.0A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type BD9876EFJ
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Original
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BD9876EFJ
12027ECT58
BD9876EFJ
300kHz
R1120A
bd9876
bd96
bd98
GRM32EB31C476K
|
A3760
Abstract: No abstract text available
Text: Datasheet Single-chip Type with Built-in FET Switching Regulators Flexible Step-down Switching Regulators with Built-in Power MOSFET BD9673AEFJ ●General Description Output 1.5A and below High Efficiency Rate Step-down Switching Regulator Power MOSFET Internal Type
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Original
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BD9673AEFJ
BD9673AEFJ
300kHz
A3760
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39E2527A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device
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Original
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MGFS39E2527A-01
39E2527A
30dBm
64QAM,
MGFS39E2527A
39E2527A
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