AGR19045XF
Abstract: No abstract text available
Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19045EF
Hz--1990
AGR19045XF
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6603 Shenzhen
Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19045E
Hz--1990
AGR19045E
DS04-077RFPP
DS02-378RFPP)
6603 Shenzhen
AGR19045EF
AGR19045EU
CDR33BX104AKWS
JESD22-C101A
transistor J600
J600 transistor
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J593
Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
DS04-163RFPP
DS04-065RFPP)
J593
AGR21030EF
AGR21030EU
JESD22-C101A
J157
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transistor 7350
Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19060E
Hz--1990
AGR19060E
DS04-159RFPP
DS04-078RFPP)
transistor 7350
agere c8 c1
transistor 7350 A
100B100JCA500X
AGR19060EF
AGR19060EU
JESD22-C101A
j496
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AGR09030GUM
Abstract: JESD22-C101A RF35
Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09030GUM
Hz--895
AGR09030GUM
DS04-246RFPP
PB04-094RFPP)
JESD22-C101A
RF35
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C1206C104KRAC7800
Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09045E
Hz--895
AGR09045E
DS04-295RFPP
DS04-198RFPP)
C1206C104KRAC7800
100b6r8
AGR09045EF
AGR09045EU
JESD22-C101A
RM73B2B103J
100B470JW
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1N4148
Abstract: BAV19WS BAV20WS GRM40 MCL4148 MIC4826 MIC4826BMM
Text: MIC4826 Micrel MIC4826 Low Input Voltage, 160VPP Output Voltage, EL Driver Final Information General Description Features Micrel’s MIC4826 is a high output voltage, DC to AC converter, designed for driving EL Electroluminescent lamps. The device operates from an input voltage range of 1.8V to
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MIC4826
160VPP
MIC4826
1N4148
BAV19WS
BAV20WS
GRM40
MCL4148
MIC4826BMM
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J161 mosfet transistor
Abstract: MOSFET J161 100B6R8JW
Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS03-070RFPP
DS02-276RFPP)
J161 mosfet transistor
MOSFET J161
100B6R8JW
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mosfet 1412
Abstract: No abstract text available
Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
DS03-202RFPP
mosfet 1412
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09030E
Hz--895
DS04-197RFPP
DS04-149RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR18060E
Hz--1880
AGR18060EU
AGR18060EF
DS04-032RFPP
DS02-325RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-007RFPP
DS03-059RFPP)
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agere c8 c1
Abstract: 100b8r2jw 100B6R8JW
Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09045E
Hz--895
DS02-219RFPP
agere c8 c1
100b8r2jw
100B6R8JW
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GRM42-6CH
Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM39F104Z25
GRM1885C1H100JA01B
GRM39F104Z
GRM188R60J105KA01B
grm219b31a
GRM39CH
GRM40F104Z50
GRM40X7R104K50
GRM188F11C105Z
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AGR21045EF
Abstract: AGR21045XF JESD22-C101A
Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
DS04-241RFPP
DS04-178RFPP)
AGR21045XF
JESD22-C101A
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100B100JW500X
Abstract: AGR09090EF JESD22-C101A
Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
AGR09090EF
DS04-058RFPP
DS04-029RFPP)
100B100JW500X
JESD22-C101A
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AGR09180EF
Abstract: JESD22-C101A
Text: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular
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AGR09180EF
Hz--895
AGR09180EF
DS04-123RFPP
DS04-031RFPP)
JESD22-C101A
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140-A525-SMD
Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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AGRB03GM
AGRB03GM
IS-95
DS04-259RFPP
140-A525-SMD
Z1 SMD
agere c8 c1
atc600
JESD22-C101A
Sprague Electric
SMD MOSFET N Z4
agere c8
vj1206y223kxa
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AGRC10GM
Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor
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AGRC10GM
AGRC10GM
DS04-260RFPP
JESD22-C101A
mosfet 6 ghz
z823
1661 mhz
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GRM40X7R103K100
Abstract: No abstract text available
Text: MIC4826 Micrel MIC4826 Low Input Voltage, 160VPP Output Voltage, EL Driver Advance Information General Description Features Micrel’s MIC4826 is a high output voltage, DC to AC converter, designed for driving EL Electroluminescent lamps. The device operates from an input voltage range of 1.8V to
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MIC4826
160VPP
MIC4826
GRM40X7R103K100
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1N4148
Abstract: BAV19WS BAV20WS GRM40 MIC4826 MIC4826BMM MIC4826YMM 1N4148 75V 150mA Diodes
Text: MIC4826 Micrel MIC4826 Low Input Voltage, 160VPP Output Voltage, EL Driver Final Information General Description Features Micrel’s MIC4826 is a high output voltage, DC to AC converter, designed for driving EL Electroluminescent lamps. The device operates from an input voltage range of 1.8V to
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MIC4826
160VPP
MIC4826
160VPP
100Hz
1N4148
BAV19WS
BAV20WS
GRM40
MIC4826BMM
MIC4826YMM
1N4148 75V 150mA Diodes
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AGR21030EF
Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21030EF
AGR21030EF
1030EF
AGR21030XF
21045F
12-digit
2.4 ghz mosfet
AGR21030XF
JESD22-C101A
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"RF Power Transistor"
Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030EF
AGR18030EF
21045F
"RF Power Transistor"
JESD22-C101A
transistor equivalent table 557
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100B8R2JCA500X
Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114
Text: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global
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AGR18060E
Hz--1880
AGR18060E
AGR18060EU
AGR18060EF
100B8R2JCA500X
100B100JCA500X
AGR18060EF
AGR18060EU
CDR33BX104AKWS
JESD22-A114
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