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    GSDS50020 Search Results

    GSDS50020 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GSDS50020 Semico High Power NPN Transistor Original PDF
    GSDS50020 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    GSDS50020 General Semiconductor NPN Double Diffused Epitaxial Transistor, TO-3, 50 Amp Switching Scan PDF
    GSDS50020 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GSDS50020 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    GSDS50020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vceo 25 icm 1 rj-c

    Abstract: GSDS50018 GSDS50020
    Text: Data Sheet No. GSDS50018 & GSDS50020 Generic Part Number: Type GSDS50018 & GSDS50020 GSDS50018 & GSDS50020 High Power NPN Transistors 180 V & 200 V, 50 Amp Switching TO-3 TO-2004AE Case Features: Applications: • • • • • • • • • • •


    Original     		PDF GSDS50018 GSDS50020 O-2004AE) vceo 25 icm 1 rj-c GSDS50018 GSDS50020

    IRF250N

    Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
    Text: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100


    Original     		PDF 2N5881 O-204AA/TO-3 DTS4067 DTS424 O-204AA/TO-3: DTS425 IRF250N ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714

    Untitled

    Abstract: No abstract text available
    Text: D at a S h e e t No. G S D S 5 0 0 1 8 & G SD S 5 0 0 2 0 C=L SEMICONDUCTORS Type GSDS50018 & G e n e ric P a rt N u m b e r: GSDS50020 G S D S 50018 & G SD S50020 High Power NPN Transistors 180 V & 200 V, 50 Amp Switching TO-3 T0-2004AE Case Features: Applications:


    OCR Scan     		PDF GSDS50018 GSDS50020 S50020 T0-2004AE)

    2N6655

    Abstract: 2N6654 26X16
    Text: General Semiconductor Industries, Inc. ¥ NPN TRANSISTOR CHIP " 21 " Typical Device Types: 2N6653, 2N6654, 2N6655, GSDS50020 20 - 50 AMP Fast Switching Bonding Pad Areas Base 3 3 4 x 1 6 m ils Emitter (4) 26 X 16 m ils Front Metallization: Aluminum • C 2R For


    OCR Scan     		PDF 2N6653, 2N6654, 2N6655, GSDS50020 50/15A, 10/3A 2N6655 2N6654 26X16

    t03 package transistor pin configuration

    Abstract: 2n6655 GSDR10020 xgsr15035-1 XGSR15040 TO3 HEATSINK GSTR6030-I GSTR6035 GSTR6040 GSTR6040-I
    Text: SÛUARE » CO/ GENERAL -A f hD D • fiSEISSÜfl 0001057 60C 01857 GENERAL SEMICONDUCTOR INDUSTRIES, INC. 1 1 I b ■ D N PN Isolated Collector TO-3 ISOLATED COLLECTOR HIGH SPEED, HIGH POWER SWITCHING TRANSISTOR The isolated collector package configuration has been designed for use In switching applications


    OCR Scan     		PDF TWX910r9S0-1942 t03 package transistor pin configuration 2n6655 GSDR10020 xgsr15035-1 XGSR15040 TO3 HEATSINK GSTR6030-I GSTR6035 GSTR6040 GSTR6040-I

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


    OCR Scan     		PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    c 3421 transistor

    Abstract: GSRU20040 2n6924 gsru200 2N2891
    Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .


    OCR Scan     		PDF MIL-STD-750, MIL-STD-883C, c 3421 transistor GSRU20040 2n6924 gsru200 2N2891

    N25U

    Abstract: 7b92a AMs03 BM-7A GDGE173 GSDS50018 GSDS50020 QQG2174 TWX910-950-1942
    Text: í SÛUARE D CO/ D GE NE RA L 3918590 G EN ERAL ^ • □005175 95 D SEM IC O N D U C TO R General Sem iœ nductor Industries,Inc. ^ ÛSE550Ô 1 0 U B H E T Ì COMPANY 1 02172 D NPN 180, 200 V. 50 Amp Switching G S D S 5 0 0 1 8 , 20 C 2R c2r ®high speed / high power switching transistors


    OCR Scan     		PDF TWX910-950-1942 N25U 7b92a AMs03 BM-7A GDGE173 GSDS50018 GSDS50020 QQG2174 TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: NPN 180, 200 V. ^ General 3 ^ Semiconductor ^ Industries, Inc. 5 0 A m p S w it c h in g GSDS50018. 20 C 2R R c2r h ig h speed / h ig h po w e r s w it c h in g t r a n s is t o r s The GSD series is a reliable NPN double diffused epitaxial transistor designed fo r


    OCR Scan     		PDF GSDS50018. GSDS50020