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    GSTU30020 Search Results

    GSTU30020 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GSTU30020 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    GSTU30020 General Semiconductor High Power NPN Switch Plus Transistors Scan PDF

    GSTU30020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2128

    Abstract: 2N2773 2N3055C
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (HZ) 'CBO t0N r Max Max Max (A) (s) Max (Ohms) 140m 187m 90m 90m 175 140 175 175 175 175 175 140m 175 J 175 J (CE)*at T Oper Package Style (°C)


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    PDF 109T2 SML44311 SDT44311 2N3055C 2N3772C PN5934 2N5934 O-218AA 2SC2128 2N2773

    Untitled

    Abstract: No abstract text available
    Text: "73 GENERAL SEMICONDUCTOR DË"| 3=1105^0 -Oüdl'lB'l H | ~ 3918590 GENERAL SE MI CO N DU CT OR . ^ 72C 01939 D " 7 '-3 3~¿><T ik . General Semiconductor Industries, Inc. S q U H R E n COMPANY Typical Device Types: 2N6249-2N6251, 2N6338-2N6341, GSTU30020


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    PDF 2N6249-2N6251, 2N6338-2N6341, GSTU30020 30nsec 150nsec 1500nsec 280nsec TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: General Semiconductor Industries, Inc. ¥ NPN TR A N SISTO R CHIP " Typical Device Types: 2N6338 2N6341, 2N6584, GSTU30020 41 " 1 0 -2 5 -3 0 AMP Fast Switching Bonding Pad Areas Base 1 65 x 22.5 mils Emitter (2) 38 x 23 mils Front Metallization: Aluminum


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    PDF 2N6338 2N6341, 2N6584, GSTU30020

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


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    PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    c 3421 transistor

    Abstract: GSRU20040 2n6924 gsru200 2N2891
    Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .


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    PDF MIL-STD-750, MIL-STD-883C, c 3421 transistor GSRU20040 2n6924 gsru200 2N2891

    GSTU30018

    Abstract: GSTU30020 TWX910-950-1942 collector HU-4
    Text: SÛUARE » CO/ GENERAL 3918590 ‘ì s » • fl5 2 5 5 0 fl o o o a n a GENERAL SEMICONDUCTOR General ^ Semiconductor • Industries, Inc. ^ 9 5D a 02198 S Q U H R E TÌ CDMPHNY H IG H POWER NPN S w itch P/US TRANSISTORS T he G S T U series of N P N transistors is designed for high speed switching


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    PDF 52BB0& O-204AA TWX910-950-1942 GSTU30018 GSTU30020 TWX910-950-1942 collector HU-4

    gstu30018

    Abstract: No abstract text available
    Text: ^ General 3 ^ Sem iconductor ^ - Industries, Inc. HIGH POWER NPN Switch PfUS TRANSISTORS The G STU series of NPN transistors is designed for high speed switching systems. This unique series features General Semiconductor Industries’ C 2R® manufacturing process which provides surface stabilization for high voltage


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