GT25J1 Search Results

GT25J1 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
GT25J101	Toshiba	Discrete IGBTs	Original	PDF
GT25J101	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
GT25J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
GT25J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
GT25J101	Toshiba	Insulated Gate Bipolar Transistor Silicon N-Channel IGBT	Scan	PDF
GT25J101	Toshiba	N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Scan	PDF
GT25J102	Toshiba	Discrete IGBTs	Original	PDF
GT25J102	Toshiba	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT	Scan	PDF
GT25J102	Toshiba	Silicon N-channel IGBT insulated gate bipolar transistor for high power switching, motor control applications	Scan	PDF

GT25J1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	PDF	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	PDF	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122
GT50J101 Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive	Original	PDF
s5j53 Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require	Original	PDF	E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Untitled Abstract: No abstract text available Text: TOSHIBA GT25J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • 1 5 .9 M A X High Input Impedance High Speed : tf=0.35/*s Max.	OCR Scan	PDF	GT25J101
Untitled Abstract: No abstract text available Text: GT25J102 TO SHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 02 HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=U.35//s Max. • Low Saturation Voltage	OCR Scan	PDF	GT25J102 35//s
Untitled Abstract: No abstract text available Text: TOSHIBA GT25J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • 1 5 .9 M A X High Input Impedance High Speed : tf=0.35/*s Max.	OCR Scan	PDF	GT25J101 150TTER
LT-15V Abstract: No abstract text available Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 HIGH P O W E R S W I T C H I N G A P P L I C A TIO NS. Unit M O T O R C O N TR OL A P P L I C ATI ONS . . High Input in m m 0 3 .2 ± O .2 15.9 MAX Impedance . High Speed : t f = 0 . 35lis Max.	OCR Scan	PDF	GT25J101 35lis 5000i LT-15V
Untitled Abstract: No abstract text available Text: GT25J102 T O SH IB A TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT fi t i r 1 1 n i H T V • HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.35//s Max. Low Saturation Voltage : VGE (say = 4.0V (Max.)	OCR Scan	PDF	GT25J102 35//s
IGBT GT25J101 Abstract: GT25J101 Text: TO SH IBA GT25J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS V <¿3.2 ±0.2 High Input Impedance High Speed : tf=0.35;i*s Max. Low Saturation Voltage : V qe ( s a t ) “ 4.0V (Max.)	OCR Scan	PDF	GT25J101 GT25J1 2-16C1C IGBT GT25J101 GT25J101
Untitled Abstract: No abstract text available Text: TOSHIBA GT25J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 01 HIGH PO W ER SWITCHING APPLICATIONS U n it in mm M O TO R CONTROL APPLICATIO NS 1 5.9 M A X ^ 3 2 Í 0.2 M • H ig h In p u t Im pedance • H ig h Speed	OCR Scan	PDF	GT25J101

Untitled Abstract: No abstract text available Text: TO SH IBA GT25J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • 1 5.9M A X V <¿3.2 ± 0 .2 High Input Impedance High Speed : tf=0.35;i*s Max.	OCR Scan	PDF	GT25J101 2-16C1C
IGBT GT25J101 Abstract: GT25J101 Text: GT25J101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 3 .2 ± 0 . 2 1 5 .9 M A X • • • • High Input Impedance High Speed : tf=0.35/*s Max.	OCR Scan	PDF	GT25J101 GT25J1 2-16C1C IGBT GT25J101 GT25J101
GT25J102 Abstract: No abstract text available Text: GT25J102 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.35/¿s Max. Low Saturation Voltage : VGE (sat)~4-0V (Max.)	OCR Scan	PDF	GT25J102 GT25J1 GT25J102
GT25J102 Abstract: No abstract text available Text: GT25J102 TO SH IBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.35/¿s Max. Low Saturation Voltage :	OCR Scan	PDF	GT25J102 GT25J1 2-16F1C GT25J102
gt25j101 Abstract: 2-16C1C IGBT GT25J101 Text: TOSHIBA GT25J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f' w i •T ? wmrR v i ■i SILICON N-CHANNEL IGBT m ^ht ■ HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 53.2 ± 0.2 15.9MAX • High Input Impedance • High Speed •	OCR Scan	PDF	GT25J101 gt25j101 2-16C1C IGBT GT25J101
S5J53 Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction	OCR Scan	PDF	200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	PDF	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	PDF	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	PDF	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
GT80J101 Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5 Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412	OCR Scan	PDF	GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

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GT25J1 Search Results

GT25J1 Datasheets (9)

GT25J1 Datasheets Context Search

GT30J124

STR-G6551

GT30F124

GT50J101

s5j53

SSP35n03

TOSHIBA MG150N2YS40

Untitled

Untitled

Untitled

LT-15V

Untitled

IGBT GT25J101

Untitled

Untitled

IGBT GT25J101

GT25J102

GT25J102

gt25j101

S5J53

GT250101

15J102

2sC5200, 2SA1943, 2sc5198

GT80J101