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    ROHM Semiconductor RGT40NS65DGTL

    IGBT TRENCH FIELD 650V 40A LPDS
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    Ameya Holding Limited RGT40NS65DGTL 366 1
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    ROHM Semiconductor RGT40NL65DGTL

    IGBT TRENCH FIELD 650V 40A LPDS
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    Goford Semiconductor GT400P10K

    MOSFET P-CH 100V 35A TO-252
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    Verical GT400P10K 2,500 2,500
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    ROHM Semiconductor RGT40NS65DGC9

    IGBT TRENCH FIELD 650V 40A TO262
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    ROHM Semiconductor RGT40TM65DGC9

    IGBT TRNCH FLD 650V 17A TO220NFM
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    Mouser Electronics RGT40TM65DGC9 947
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    GT40 Datasheets (74)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT-40 MCE / KDI ATTENUATOR, PIN DIODE Original PDF
    GT40 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT40 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT40 Unknown Vintage Transistor Datasheets Scan PDF
    GT400S400A Carlo Gavazzi Relays - Accessories - TOR SCREW 400A 260-400A Original PDF
    GT402A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT402B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT402D Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT402E Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT402G Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT402I Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT402SZ Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT402V Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT403A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT403B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT403D Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT403E Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT403G Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT403I Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT403J Unknown Shortform Transistor Datasheet Guide Short Form PDF

    GT40 Datasheets Context Search

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    GT40Q323

    Abstract: No abstract text available
    Text: GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector


    Original     		PDF GT40Q323 GT40Q323

    Untitled

    Abstract: No abstract text available
    Text: GT40J325 Discrete IGBTs Silicon N-Channel IGBT GT40J325 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT40J325

    GT40J121

    Abstract: No abstract text available
    Text: GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT40J121 GT40J121

    Untitled

    Abstract: No abstract text available
    Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT40T101 2-21F2C

    VS-GT400TH120N

    Abstract: No abstract text available
    Text: VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient


    Original     		PDF VS-GT400TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GT400TH120N

    GT40G121

    Abstract: No abstract text available
    Text: GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs Typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (Typ.) (IC = 60 A)


    Original     		PDF GT40G121 GT40G121

    Parallel resonance inverter

    Abstract: TOSHIBA IGBT DATA BOOK GT40T301 GT40
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)


    Original     		PDF GT40T301 Parallel resonance inverter TOSHIBA IGBT DATA BOOK GT40T301 GT40

    Untitled

    Abstract: No abstract text available
    Text: GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT40J121

    Untitled

    Abstract: No abstract text available
    Text: GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT40WR21

    Untitled

    Abstract: No abstract text available
    Text: GT40RR21 Discrete IGBTs Silicon N-Channel IGBT GT40RR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT40RR21

    GT40T102

    Abstract: No abstract text available
    Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)


    Original     		PDF GT40T102 2-21F2C GT40T102

    GT40T301

    Abstract: No abstract text available
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 40 A)


    Original     		PDF GT40T301 GT40T301

    GT40Q322

    Abstract: No abstract text available
    Text: GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT40Q322 Preliminary Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed : tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector


    Original     		PDF GT40Q322 GT40Q322

    Parallel resonance inverter

    Abstract: GT40T302
    Text: GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf = 0.23 s typ. (IC = 40 A)


    Original     		PDF GT40T302 Parallel resonance inverter GT40T302

    Untitled

    Abstract: No abstract text available
    Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed


    Original     		PDF GT40T321

    Untitled

    Abstract: No abstract text available
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)


    Original     		PDF GT40T301 2-21F2C

    IEGT

    Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


    Original     		PDF GT40Q321 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter

    40t321

    Abstract: GT40T321 gt40t
    Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed


    Original     		PDF GT40T321 40t321 GT40T321 gt40t

    GT40M101

    Abstract: 216F
    Text: GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed Low saturation voltage : tf = 0.4µs Max. : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT40M101 2-16F GT40M101 216F

    Untitled

    Abstract: No abstract text available
    Text: GT40T101 HIGH POWER SWITCHING APPLICATIONS. U nit in mm 80.JMAX. • Enhancement-Mode • High Speed • Low Saturation : V c e sat = 5.0V (Max.) (Ic = 40A) h * J¡ : tf=0.4^is (Max.) (Iq = 40A) ¥ , = g j | . 1 1.5 , i r 7 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF GT40T101 2-21F2C CHARACTERISTICST40T101

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)


    OCR Scan     		PDF GT40T101

    GT40M301

    Abstract: ED 05 Diode
    Text: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25^s TYP.


    OCR Scan     		PDF GT40M301 GT40M301 ED 05 Diode

    GT40

    Abstract: No abstract text available
    Text: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE fiTJil M 301 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode • H ig h s p e e d IG B T : t f = 0 .25^8 TYP.


    OCR Scan     		PDF GT40M301 GT40

    VQE 24

    Abstract: GT40M101
    Text: GT40M101 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf^ O .^ s Max. Low Saturation Voltage : V C E (sa t)~ 3 .4 V (Max.) Enhancement-Mode


    OCR Scan     		PDF GT40M101 GT40M1 2-16F VQE 24 GT40M101