Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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38H5000
5SYA1177-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
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40H4000
5SYA1176-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V m 5SDD 33L5500 Doc. No. 5SYA1168-00 Aug 10 • Patented free-floating silicon technology Very low on-state losses Optimum power handling capability
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33L5500
5SYA1168-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)
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G4000EC450
G4000EC450
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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48H3200
5SYA1182-00
CH-5600
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5sya2020
Abstract: 5SDD40H4000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
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40H4000
5SYA1176-01
CH-5600
5sya2020
5SDD40H4000
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thyristor lifetime
Abstract: No abstract text available
Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.
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703-996-8200x105.
DE-FG0207ER84712,
thyristor lifetime
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link
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14H4505
5SYA1110-02
CH-5600
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abb phase control thyristors
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 4275 A = 6715 A = 60x103 A = 0.95 V = 0.13 mΩ Phase Control Thyristor 5STP 38Q4200 Doc. No. 5SYA1051-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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38Q4200
5SYA1051-02
38Q4200
CH-5600
abb phase control thyristors
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diode vrrm 8000 if 7000
Abstract: 5SDD31H6000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3246 5099 40x103 0.894 0.166 Rectifier Diode V A A A V mΩ 5SDD 31H6000 Doc. No. 5SYA1183-02 May 09 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values 1) Parameter
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31H6000
5SYA1183-02
CH-5600
diode vrrm 8000 if 7000
5SDD31H6000
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5SDD31H6000
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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31H6000
5SYA1183-00
CH-5600
5SDD31H6000
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gto 2400 capacitor
Abstract: PTC 8750 B25856-K1405-K003 KA 1400 capacitor 2200 uF siemens gto 2400 B25856K2104K003
Text: Capacitors for Power Electronics Series/Type: B25856 The following products presented in this data sheet are being withdrawn. Ordering Code B25856K2155K003 B25856K2104K003 B25856K3505K003 B25856K3105K003 B25856K3504K003 B25856K3204K003 B25856K7305K003 B25856K7155K003
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B25856
B25856K2155K003
B25856K2104K003
B25856K3505K003
B25856K3105K003
B25856K3504K003
B25856K3204K003
B25856K7305K003
B25856K7155K003
B25856K7504K003
gto 2400 capacitor
PTC 8750
B25856-K1405-K003
KA 1400
capacitor 2200 uF siemens
gto 2400
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Untitled
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode
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25H2501
5SYA1206-01
CH-5600
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IEC61071
Abstract: gto 2400 capacitor
Text: APPLICATION • LOW-MEDIUM VOLTAGE DRIVES GTO SNUBBER GCT SNUBBER CHARACTERISTICS LOW ESR LOW INDUCTANCE EXCELLENT VIBRATION HANDLING HIGH AC VOLTAGE CAPABILITY HIGH DV/DT MINIMAL CORONA PARTIAL DISCHARGE EFFECTS IEC61071 COMPLIANT
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IEC61071
gto 2400 capacitor
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abb phase control thyristors
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 3960 A = 6230 A = 60x103 A = 0.95 V = 0.13 mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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38N4200
5SYA1012-04
38N4200
CH-5600
abb phase control thyristors
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RC snubber diode
Abstract: DC009 100a 1000v GTO
Text: European PowerSemiconductor and Electronics Company Marketing Information D 281 S 60 T ø3,5+0,1 deepth = 4±0,2 on both sides C A 4. August 1998 D 281 S 60 T Vorläufige Daten Preliminary Data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties
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Untitled
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4501
5SYA1208-02
CH-5600
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1419
Abstract: capacitor abb
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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30J4502
5SYA1202-03
CH-5600
1419
capacitor abb
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSD560
O-220
KSB601
Cycle50%
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Untitled
Abstract: No abstract text available
Text: KSD1589 NPN SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-220F • Complement to KSB1098 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC
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KSD1589
KSB1098
O-220F
Cycle50%
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A881B
Abstract: 4500v
Text: A881B 77mm Fast Recovery DIODE 4500V / 1950Arms The A881B fast recovery diode is designed as parallel mate for 3000A IT Q M GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge
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A881B
1950Arms
A881B
125oC
case70oC
00A/us
11\a881b
4500v
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FG600AH
Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Text: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC
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00D1A53
80ation
MAX/10
FG600AH
FG1800AH
FG600AV
FG1000AL
FG1000A
fg2000av
FG1000AH
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SKKE400F
Abstract: No abstract text available
Text: S1E D • a i 3 b b 7 1 G Q 0 3 4 4 T 3TT m S Z K G s e MIKRD n S E H I K R O N INC Ifrms maximum value for continuous operation Vrsm Vrrm 650 A Fast Diode Modules SKKE400F Ifav (sin. 180;Tease = 89°C;50Hz) V 400 A 800 SKKE 400 F 08 1200 S K K E400 F 12
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SKKE400F
-U-44
SKKE400F
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4n33 4n25
Abstract: MOC1005 MOC1200 transistor collector diode protection MOC100 Optical Couplers protection couplers 4N25 4N27 4N28
Text: Optical Couplers/Isolators Couplers are designed to provide isolation protection fro m high-voltage transients, surge voltage or low level noise th a t w ould otherwise damage the inp u t or generate erroneous inform ation. They allow interfacing systems o f d iffe ren t logic levels, d iffe ren t grounds, etc., th a t w ould otherwise be incom patible.
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4N28/darlingtons
MOC1200)
MOC119
MOC8030
MOC8050
4n33 4n25
MOC1005
MOC1200
transistor collector diode protection
MOC100
Optical Couplers
protection couplers
4N25
4N27
4N28
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