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    GY40N Search Results

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    Rochester Electronics LLC MGY40N60

    IGBT 66A, 600V, N CHANNEL, TO 26
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGY40N60 Bulk 12,095 66
    • 1 -
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    • 100 $4.58
    • 1000 $4.58
    • 10000 $4.58
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    Rochester Electronics LLC MGY40N60D

    TRANS IGBT CHIP N-CH 600V 66A 3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGY40N60D Bulk 1,588 62
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    • 100 $4.89
    • 1000 $4.89
    • 10000 $4.89
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    STMicroelectronics STGY40NC60VD

    IGBT 600V 80A MAX247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STGY40NC60VD Tube 453 1
    • 1 $7.28
    • 10 $7.28
    • 100 $4.19267
    • 1000 $3.02375
    • 10000 $3.02375
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    Avnet Americas STGY40NC60VD Tube 14 Weeks 600
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    • 1000 $3.06203
    • 10000 $2.87976
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    Mouser Electronics STGY40NC60VD 764
    • 1 $7.04
    • 10 $6.72
    • 100 $3.52
    • 1000 $3.02
    • 10000 $3.02
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    Newark STGY40NC60VD Bulk 600
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    STMicroelectronics STGY40NC60VD 764 1
    • 1 $6.9
    • 10 $6.59
    • 100 $3.45
    • 1000 $2.97
    • 10000 $2.97
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    TME STGY40NC60VD 1
    • 1 $6.28
    • 10 $5.23
    • 100 $5
    • 1000 $4.34
    • 10000 $3.73
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    Avnet Silica STGY40NC60VD 600 15 Weeks 30
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    EBV Elektronik STGY40NC60VD 15 Weeks 30
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    onsemi MGY40N60

    Insulated Gate Bipolar Transistor, 66A, 600V, N-Channel, TO-264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MGY40N60 12,095 1
    • 1 $4.4
    • 10 $4.4
    • 100 $4.14
    • 1000 $3.74
    • 10000 $3.74
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    onsemi MGY40N60D

    Trans IGBT Chip N-CH 600V 66A 3-Pin(3+Tab) TO-264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MGY40N60D 1,588 1
    • 1 $4.7
    • 10 $4.7
    • 100 $4.42
    • 1000 $4
    • 10000 $4
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    GY40N Datasheets Context Search

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    PDF

    GY40N60D

    Abstract: Y40N60D GY40N60 IC IGBT fast GY40N
    Text: MOTOROLA O rder this docum ent by M G Y40N60D /D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY40N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4


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    Y40N60D GY40N60D GY40N60 IC IGBT fast GY40N PDF

    GY40NC60VD

    Abstract: GY40NC60V IC 2030 schematic diagram 2030 ic circuit diagram GY40N STGY40NC60VD gy40NC60
    Text: GY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50


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    STGY40NC60VD Max247 GY40NC60VD GY40NC60V IC 2030 schematic diagram 2030 ic circuit diagram GY40N STGY40NC60VD gy40NC60 PDF

    GY40NC60VD

    Abstract: STGY40NC60VD Welding topologies MAX247 GY40N
    Text: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


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    STGY40NC60VD Max247 Max247 GY40NC60VD STGY40NC60VD Welding topologies GY40N PDF

    GY40NC60VD

    Abstract: gy40NC60 GY40N STGY40NC60VD IC 2030 schematic diagram ic MARKING QG
    Text: GY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO


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    STGY40NC60VD Max247 GY40NC60VD gy40NC60 GY40N STGY40NC60VD IC 2030 schematic diagram ic MARKING QG PDF

    GY40NC60VD

    Abstract: 2030 ic circuit diagram IC 2030 schematic diagram
    Text: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


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    STGY40NC60VD Max247 Max247 GY40NC60VD 2030 ic circuit diagram IC 2030 schematic diagram PDF

    GY40N

    Abstract: gy40NC60 GY40NC60VD GY40NC60V 600V 20A 50KHz STGY40NC60VD JESD97 IC 2030 schematic diagram
    Text: GY40NC60VD N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT Features Type VCES GY40NC60VD 600V IC VCE sat (max)@25°C @100°C < 2.5V 50A • High current capability ■ High frequency operation up to 50kHz ■ Low CRES / CIES ratio (no cross-conduction


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    STGY40NC60VD Max247 50kHz GY40N gy40NC60 GY40NC60VD GY40NC60V 600V 20A 50KHz STGY40NC60VD JESD97 IC 2030 schematic diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original
    STGY40NC60VD Max247 PDF

    Untitled

    Abstract: No abstract text available
    Text: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


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    STGY40NC60VD Max247 PDF

    GY40N60

    Abstract: motorola 6810 GY40N
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is In su la te d G a te B ip o la r T ra n sisto r IG B T u ses an a dva n ce d


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    GY40N60 GY40N60 motorola 6810 GY40N PDF

    Untitled

    Abstract: No abstract text available
    Text: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original
    STGY40NC60VD Max247 PDF