H11V
Abstract: N286 H11V2
Text: Optoisolator Specifications H11V1, H11V2, H11V3 Optoisolator GaAIAs Infrared Emitting Diode and Silicon Integrated Circuit Video Signal Amplifier T h e H I IV s e rie s c o n sists o f a h ig h -s p e e d g a lh u m -a lu m in u m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d a c ro ss a g lass
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H11V1,
H11V2,
H11V3
H11V
N286
H11V2
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H11V
Abstract: No abstract text available
Text: S7E J> I flUALITY TECHNOLOGIES CORP 74bbflSl 0004232 7t7 O ptoisolator Specifications _ H11V1, H11V2, H11V3 Optoisolator GaAIAs Infrared Emitting Diode and Silicon Integrated Circuit Video Signal Amplifier SEATING PLANE T h e H I IV series consists o f a high-speed gallium -alum inum arsenide, in frared em itting d iode coupled across a glass
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H11V1,
H11V2,
H11V3
74bbflSl
QQG4E33
H11V
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Untitled
Abstract: No abstract text available
Text: Optolsolator Specifications H11V1, H11V2, H11V3 Optoisolator G aA IA s Infrared Emitting Diode and Silicon Integrated Circuit Video Signal Amplifier _ S E A T| N G , PLANÉ T h e H I IV series consists o f a high-speed gallium -alum inum arsen id e, in fra re d em itting diode coupled across a glass
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H11V1,
H11V2,
H11V3
10MHz
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H11V1
Abstract: H11V3 H11V 340 opto isolator H11V2 infrared CIRCUIT
Text: Photon Coupled Isolator H11V1, H11V2, H11V3 , G a A lA s I n f r a r e d E m ittin g D io d e & S ilic o n I n te g r a te d C ir c u it V id e o S ig n a l A m p lif ie r T h e G E S olid S ta te H I IV series consists o f a high speed G a A1 As in fra re d em ittin g d io d e c o u p led acro ss a glass isolating m e d iu m to a
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H11V1,
H11V2,
H11V3
1000Q
10MHz
100mA
92CS-42862
92CS-42S51
H11V1
H11V3
H11V
340 opto isolator
H11V2
infrared CIRCUIT
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L I D STATE 0 1 E 19762 Optoelectronic Specifications_ HA R R I S S E M I C O N D S E C T O R 37E D D 4 3 0 5 2 7 1 D 0 2 7 2 2 4 a • HAS ■ Photon Coupled Isolator H11V1, H11V2, H11V3 G a A lA s In f ra re d E m ittin g D io d e & S ilic o n
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H11V1,
H11V2,
H11V3
92CS-42662
92CS-429S1
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H11V3
Abstract: H11V1
Text: _ TH OM SO N/ DISTRIBUTOR SñE D • T0Ebfl73 O n D S ? 4 ci ■ TCSK O ptoelectronic Products O ptoisolators/O ptocouplers Continued Description S u rg e Isolation Voltage R M S Min H11B1 Photo 4 000V 500% H 11B2 Darlington 4000V 200% H 1 1B 3 Output
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T0Ebfl73
H11B1
H11B2
H11B3
H11B255
H24B1
H24B2
4N29A
4N32A
MCA231
H11V3
H11V1
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MOC3Q11
Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Text: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020
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IN6264
IN6265
4N25A
4N29A
4N32A
BPW37
BPW38
CNX35
CNY28
CNY30
MOC3Q11
h11m
qx14
21B6
LED55C
H11M1
22b4
22L2
NY33
H11M4
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CNY17 III
Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196
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IN6264
IN6265
IN6266
4N25A
4N29A
4N32A
4N38A
BPW36
BPW37
BPW38
CNY17 III
H11M1
H11M4
SL5504
H21B5
CNX35
GE3022
l14g1-l14g2-l14g3
CNY47
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