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    H11Y Search Results

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    Panduit Corp UTP28CH11YL

    COPPER PATCH CORD, CAT 5E (SD),
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    TT electronics / BI Technologies P110KH1-1Y20BR5K

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    DigiKey P110KH1-1Y20BR5K Tray 5,760
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    TT electronics / BI Technologies P110KH1-1Y15CR2K

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    TT electronics / BI Technologies P110KH1-1Y25AR5K

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    TT electronics / BI Technologies P110KH1-1Y15CR1K

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    H11Y Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H12Y

    Abstract: H11X H11Y H14Y H10Y 20-channel
    Text: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and


    Original
    32R2112R 20-Channel 32R2112R 32R2110R/2111R 32R2112 mak17 64-Lead, H12Y H11X H11Y H14Y H10Y PDF

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


    Original
    AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t PDF

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original
    AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing PDF

    84q00400t000

    Abstract: single mode step index plastic fiber 84B00100S000 SF05-SV0-02-0010 SXHP-SV0-19-0010 I-V ZN Y11Y SXHP-SC0-32-0010 850 nm LED FSMA Connectors TPE-U H
    Text: Fiber Optic Cables Assemblies, Connectors and Accessories The Quality Connection LEONI Fiber Optics LEONI Fiber Optics is your specialist for the fiber optics you use in your industrial applications. Our product range includes POF plastic and PCF cables, ready-made cables, connectors and accessories.


    Original
    PDF

    H0Y-H13Y

    Abstract: H13V
    Text: SSI 32R5281AR M m M lm 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The SSI 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low


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    32R5281AR 14-Channel 32R5281AR 14channels. H0Y-H13Y H13V PDF

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R5281R M M M k m 14-Channel Two-Terminal Read/Write Device s A TDK G rou p /C om pany Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low


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    32R5281R 14-Channel 32R5281R 14channels. PDF

    H14Y

    Abstract: VM31316
    Text: m a VTC Inc. Value the Customer VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES July, 1993 CONNECTION DIAGRAM • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nVA/Hz maximum - Input capacitance = 25 pF maximum


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    VM31316 16-CHANNEL, 32R2010 10OmV, 10MHz 600nH, H14Y VM31316 PDF

    Untitled

    Abstract: No abstract text available
    Text: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:


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    14-CHANNEL, VM312H 32R5121 600nH, PDF

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R5121/5121R Mmsifskms' 14-Channel Thin Film Read/Write Device A TDK G roup/C om pa ny Advance Information November 1991 FEATURES DESCRIPTION The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro­


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    32R5121/5121R 14-Channel 32R5121/5121R PDF

    H11Y

    Abstract: sumida variable coil
    Text: SPEC I F I CAT I ON 1 r mau i h i PART >'0. I S-7LB SUMIDA TYPE M i l l • l l i i l 1 l i ^ m T T T T T r M ^ M j m A I B I III Mill II ll ll m ill il i, TTT » m u i I SAMPLE NO. I II II I B I l l II III !■ I ■ 11 ■ 111 ■ I ■ ■ I I I B I B I I I ■ 11 ■ ! ■ ■ ■


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    2217-T277 H11Y sumida variable coil PDF

    VM VTC

    Abstract: No abstract text available
    Text: VM31216 Value the Customerm 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.85nV/VHz Maximum - Input C apacitance = 25 pF Maximum


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    VM31216 16-CHANNEL, V/12V 85nV/VHz 32R2015 600nH, VM VTC PDF

    sol 44

    Abstract: H11Y
    Text: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­


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    00Qb477 32R5121/5121R 14-Channel 32R5121/5121R sol 44 H11Y PDF

    sol 44

    Abstract: H13Y
    Text: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi­ polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They


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    32R5121/5121R 14-Channel 32R5121/5121R sol 44 H13Y PDF

    H13Y

    Abstract: HD12X
    Text: ^ VTC1nc y jr jE S ; . V M 313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • High Performance: - Read mode gain = 250V/V - Low input noise = 0.8nV/VRz maxim um


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    14-CHANNEL, 50V/V 200nH 100mV, 10MHz 600nH, H13Y HD12X PDF

    Untitled

    Abstract: No abstract text available
    Text: ♦T* VM 312H W 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER Ju ly , 1992 FEATURES DESCRIPTION The VM312H is a high-performance, low-power, high-gain, bipolar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write


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    14-CHANNEL, VM312H 180mW. 100mV, 10MHz 10OmV, 10MHz 600nH, PDF

    Untitled

    Abstract: No abstract text available
    Text: y y V T C In c. Value the Custom er VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 250V/V CZ] CZ m| CZ H 13X H 13Y HOX HOY H1X nz H1Y n


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    VM312H 14-CHANNEL, 50V/V 100mV, 10MHz 600nH, PDF

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R2015R ¿immsiiskms 16-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels of read


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    32R2015R 330i2 52-pin 32R2015R 16-Channel PDF

    H13Y

    Abstract: No abstract text available
    Text: SSI 32R5281R c w m M fc m A TDK Group/Company 14-Channel Two-Terminal Read/Write Device s Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low


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    32R5281R 14-Channel 32R5281R 700ii H13Y PDF

    H13Y

    Abstract: No abstract text available
    Text: V M 5200 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 |iH Head - Input Capacitance = 15 pF Typical - Input Noise = 0.52 nV/VHi Typical - Head Inductance Range = 0 .2 -1 .5 |iH


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    20-CHANNEL, 5W12V 20-Channels, VM5200 V/12V 5S425, V/12V H13Y PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1990 PRELIMINARY rtfe, ML4415, ML4415R ML4416, ML4416R . Micro Linear 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML4415, ML4416 devices are bipolar monolithic read/write circuits designed for use with fixed disk ferrite center-tapped recording heads. They provide a


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    ML4415, ML4415R ML4416, ML4416R ML4416 ML4415 ML4416 40/lw) 3659065/4A6. PDF

    32R2015R

    Abstract: No abstract text available
    Text: SSI 32R2015R ¿ ik m s if s k m 16-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels ot read


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    32R2015R 16-Channel 32R2015R 52-pin PDF

    H12Y

    Abstract: No abstract text available
    Text: SSI 32R2040 ¿ilmisifskms 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2040 Read/Write device is a bipolar monolithic integrated circuit designed tor use with twoterminal thin-film recording heads. It provides a low


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    32R2040 14-Channel 32R2040 14channels. H12Y PDF

    Untitled

    Abstract: No abstract text available
    Text: W ^ VValue T the C Customer -In c v VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER ADVANCE INFORMATION FEATURES July, 1992 C O N NECTIO N D IA G R A M TWO-TERMINAL READ/WRITE PREAMPS • High Performance: - Read mode gain = 150V/V_


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    VM31316 16-CHANNEL, 50V/V_ 85nV/VHz 200nH 10MHz 100mV, 10MHz 600nH, PDF

    Untitled

    Abstract: No abstract text available
    Text: r a * 8 VM5200 í % A-A# V T C In c . l/a/ue ífte Cusióme/- 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August,1997 FEATU R ES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 nH Head - Input Capacitance = 15 pF Typical


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    VM5200 20-CHANNEL, VM5200 646362S1605958575655545352515049 5S57565554535. 5r5049' 14-Channel 64-lead 17181920212223242526272829X3132/ PDF