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    H9ccnnn

    Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
    Text: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz


    Original     		PDF 166MHz H55S2G62MFP-60M 54ball) 133MHz H55S2G62MFP-75M H55S2G22MFP-60M 90ball) H9ccnnn H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M

    H55S2622JFR

    Abstract: mobile MOTHERBOARD CIRCUIT diagram 3g mobile MOTHERBOARD CIRCUIT diagram H55S2532JFR
    Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 256MBit 8Mx32bit) 11256Mbit H55S2622JFR H55S2532JFR 32bits 200us mobile MOTHERBOARD CIRCUIT diagram 3g mobile MOTHERBOARD CIRCUIT diagram

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


    Original     		PDF 256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR