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    HAF2015RJ Search Results

    HAF2015RJ Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HAF2015RJ Renesas Electronics Corporation Silicon N Channel MOS FET Series Power Switching, SOP, /Embossed Tape Visit Renesas Electronics Corporation
    HAF2015RJ-EL-E Renesas Electronics Corporation Silicon N Channel MOS FET Series Power Switching Visit Renesas Electronics Corporation
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    HAF2015RJ Price and Stock

    Renesas Electronics Corporation HAF2015RJ-EL-E

    ABU / MOSFET
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    DigiKey HAF2015RJ-EL-E Cut Tape 2,498 1
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    HAF2015RJ-EL-E Digi-Reel 2,498 1
    • 1 $3.43
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    HAF2015RJ-EL-E Reel 2,500
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    Avnet Americas HAF2015RJ-EL-E Reel 2,500 18 Weeks 2,500
    • 1 $1.173
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    Mouser Electronics HAF2015RJ-EL-E 2,500
    • 1 $2.61
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    Quest Components HAF2015RJ-EL-E 7,939
    • 1 $3.616
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    Avnet Silica HAF2015RJ-EL-E 20 Weeks 2,500
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    Renesas Electronics America HAF2015RJ-EL-E Tape & Reel (TR) 2,498 1
    • 1 $3.43
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    • 1000 $1.17547
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    HAF2015RJ Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAF2015RJ Hitachi Semiconductor Thermal MOS FETs Original PDF
    HAF2015RJ Renesas Technology Silicon N Channel MOSFET Series Power Switching Original PDF
    HAF2015RJ Renesas Technology Silicon N Channel MOS FET Series Power Switching Original PDF
    HAF2015RJ Renesas Technology Silicon N Channel MOS FET Power Switching Original PDF
    HAF2015RJ-EL Renesas Technology Silicon N Channel MOSFET Series Power Switching Original PDF

    HAF2015RJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HAF2015RJ

    Abstract: DSA003645 Hitachi DSA003645
    Text: HAF2015RJ Silicon N Channel MOS FET Series Power Switching ADE-208-933 Z 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate


    Original     		HAF2015RJ ADE-208-933 HAF2015RJ DSA003645 Hitachi DSA003645 PDF

    PRSP0008DD-A

    Abstract: REJ03G1141-0300 HAF2015RJ HAF2015RJ-EL
    Text: HAF2015RJ Silicon N Channel MOS FET Series Power Switching REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down


    Original     		HAF2015RJ REJ03G1141-0300 PRSP0008DD-A PRSP0008DD-A REJ03G1141-0300 HAF2015RJ HAF2015RJ-EL PDF

    PRSP0008DD-A

    Abstract: HAF2015RJ HAF2015RJ-EL
    Text: HAF2015RJ Silicon N Channel MOS FET Series Power Switching REJ03G1141-0200 Previous: ADE-208-933 Rev.2.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down


    Original     		HAF2015RJ REJ03G1141-0200 ADE-208-933) PRSP0008DD-A PRSP0008DD-A HAF2015RJ HAF2015RJ-EL PDF

    Hitachi DSA002731

    Abstract: No abstract text available
    Text: HAF2015RJ Silicon N Channel MOS FET Series Power Switching ADE-208-933 Z 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate


    Original     		HAF2015RJ ADE-208-933 D-85622 Hitachi DSA002731 PDF

    HAF2015RJ

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original     		/533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    HAF2015RJ

    Abstract: HAF2015RJ-EL PRSP0008DD-A REJ03G1141-0300 haf2015
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as PDF