CA3102
Abstract: CA3102E CA3102M CA3102MZ FN611
Text: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which
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CA3102
500MHz
CA3102
500MHz.
FN611
200MHz
CA3102E
CA3102M
CA3102MZ
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J307
Abstract: ca3102e CA3102 ca3102 diff amp
Text: NS E SI G D W T EN R NE D FO PLACEM ter at E D N E n MME r t Ce ED R tsc ECO MMEND l Suppo sil.com/ R T a r O c Data Sheet e i t NO EC hn .in NO R our Tec or www t L c I a cont -INTERS 8 1-88 Dual High Frequency Differential Amplifier For Low Power Applications Up to
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CA3102
500MHz
CA3102
500MHz.
J307
ca3102e
ca3102 diff amp
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CA3102
Abstract: CA3102E CA3102M MS-012-AB
Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which
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CA3102
500MHz
CA3102
500MHz.
200MHz
CA3102E
CA3102M
MS-012-AB
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CA3049T
Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8
Text: S E M I C O N D U C T O R CA3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB Typ . . . . . . . . . . . . . . . . . . . 200MHz The CA3049T and CA3102 consist of two independent
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CA3049,
CA3102
500MHz
200MHz
CA3049T
CA3102
500MHz.
ca3049
J307
CA3102 equivalent
CA3102E
CA3102M
I9 transistor
CA3102M96
m1k8
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CA3102
Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t
Text: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which
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CA3102
500MHz
CA3102
500MHz.
FN611
200MHz
CA3102E
CA3102M
MS-012-AB
diode b22
L 321 t
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Untitled
Abstract: No abstract text available
Text: h a r CA3049,J CA3102 ® S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz N o vem b er 1996 Features Description • Power Gain 23dB T y p . 200MHz T he C A 3 0 4 9 T and C A 3 10 2 co n sist o f tw o in de pen de nt
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CA3049,
CA3102
500MHz
200MHz
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CA3049T
Abstract: TA6228 CA3102E CA3102M 430Z271 CA3102 equivalent ca3049
Text: HARRIS SEfUCOND SECTOR L.1E D • 430BZ71 OOMb^bS 1,31 B H A S C A 3 0 4" 9 , C A ^3 1 0 2 w ^ J ^ m fE H a r r is S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz March 1993 Features Description
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430BZ71
500MHz
CA3049T
CA3102*
CA3102
500MHz.
200MHz
TA6228
CA3102E
CA3102M
430Z271
CA3102 equivalent
ca3049
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CA3049T
Abstract: A3102 transistor j307 3049T CA3102 J307
Text: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent
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CA3049,
CA3102
500MHz
200MHz
CA3049T
A3102
transistor j307
3049T
CA3102
J307
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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Z1000
MZ4614
MZ4627
1N4099
M4L3052
M4L3056
1N5158
varactor 36z
germanium
halbleiter index transistor
Halbleiter Buch
2n5347
2n3054
working of reactance modulator
JE2955
germanium transistor
2N3902
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L66C
Abstract: C1f TRANSISTOR ECG906 transistor HJ 388 MAC15
Text: E C G INC PHILIPS 17 E D • bL.S3‘iSfl O D O a S T I ECG906 DUAL HIGH-FREQUENCY DIFFERENTIAL AMPLIFIER semiconductors For Low-Power Applications at Frequencies up to 500 MHz •32O 0 - ^ ECG906 conilsts o f two Independent differential amplifiers w ith associated constant-current tran
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ECG906
6CQ906
T-74-09-01
ECG906
L66C
C1f TRANSISTOR
transistor HJ 388
MAC15
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Horizontal Transistor TT 2246
Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz
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HFA1105
HFA1115
350MHz
225MHz
000V/ps
50MHz.
Horizontal Transistor TT 2246
ca3080 spice
vogt transformer 406 69
CA3098 equivalent
ICL8038 applications advantages disadvantages
gi 9544
class d amplifier schematic hip4080
STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY
siemens transistor manual
BUF601
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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J307
Abstract: transistor j307 A3049 CA3049T CA3102 equivalent CA3049
Text: •A3049, CA3102 CO^ ca" OÏ a 'v * e v t'“ Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz DecaTlßer 1998 Features Description • Power Gain 23dB T y p . 200MHz The CA3049T and CA3102 consist of two independent
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A3049,
CA3102
500MHz
CA3049T
CA3102
500MHz.
J307
transistor j307
A3049
CA3102 equivalent
CA3049
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2N5849 motorola
Abstract: 2N5849 K1245 vk200 rfc with 6 turns ti211 TRANSISTOR motorola 838 RNW transistor
Text: MOTOROLA SC XSTRS/R F 4bE D L3fci7254 OCHMlOl MOTOROLA T • MOTb 7^33-¿3 ■ SEM ICONDUCTOR ■ TECHNICAL DATA 2N5849 T h e R F L in e 40 W-50 MHz RF POWER T R A N SIST O R NPN SIL IC O N NPN SILIC O N RF POWER T R A N SIST O R designed p rim a rily for use in large signal am plifie r o u t p u t stages,
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L3fci7254
2N5849
2N5849
DQR410M
2N5849 motorola
K1245
vk200 rfc with 6 turns
ti211
TRANSISTOR motorola 838
RNW transistor
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300
in5388
2N5161
germanium
4m28
Germanium drift transistor
2N5070
1NS248
2N5271
inverter welder 4 schematic
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Hammarlund
Abstract: 2N5849 motorola 2N5849 W50 RF TRANSISTOR
Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA 2N5849 T h e R F Lin e 40 W-50 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICO N RF POWER TRANSISTO R . . . designed p r im a rily fo r use in large-signal a m p lifie r o u tp u t stages, th e 2 N 5 8 4 9 is inte n d e d fo r use in in d u s tria l c o m m u n ic a tio n s e q u ip
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2N5849
Hammarlund
2N5849 motorola
2N5849
W50 RF TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: CA3102 Semiconductor Data Sheet February 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz File Num ber 611.5 Features • Power Gain 23dB Typ . 200MHz • Noise Figure 4.6dB (T y p ). 200MHz
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CA3102
500MHz
200MHz
CA3102
500MHz.
1-800-4-HARRIS
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CA3049T
Abstract: ca3049 transistor j307 CA3102 CA3102E TA6228 car Amplifier schematic diagrams 12v A3102 CA3102M J307
Text: A3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz D eo Features Description • Power Gain 23dB T y p . 200MHz The CA3049T and CA3102 consist of two independent differential amplifiers with associated constant current
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CA3049,
CA3102
500MHz
200MHz
200MHz
CA3049T
ca3049
transistor j307
CA3102
CA3102E
TA6228
car Amplifier schematic diagrams 12v
A3102
CA3102M
J307
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TRIAC RCA ca3058
Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Text: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in tegrated circuits and MOS field-effect transistors for both industrial and con sumer applications. An Index to Devices provides a complete listing of
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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Motorola transistors MRF 947
Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1N5000
1N5001
1N5002
1N5003
1N5149
1N5150
1N5153
1N5155
1N5158
1N5159
1N5160
MAX 6438 GEO SEMICONDUCTORS
2N6058
transistor bf 175
2N3902
2N5696
1N5788
Germanium itt
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