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    HAT2285WP Search Results

    HAT2285WP Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2285WP-EL-E Renesas Electronics Corporation N Channel MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
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    HAT2285WP Price and Stock

    Renesas Electronics Corporation HAT2285WP-EL-E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HAT2285WP-EL-E 1,672
    • 1 $4.2
    • 10 $4.2
    • 100 $4.2
    • 1000 $2.1
    • 10000 $2.1
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    HAT2285WP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT2285WP Renesas Technology Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Original PDF
    HAT2285WP-EL-E Renesas Technology Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Original PDF

    HAT2285WP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT2285WP

    Abstract: HAT2285WP-EL-E MOS2
    Text: HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0300 Rev.3.00 Apr 05, 2006 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode


    Original     		PDF HAT2285WP REJ03G1371-0300 PWSN0008DB-A HAT2285WP HAT2285WP-EL-E MOS2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1371-0310 High Speed Power Switching Rev.3.10 May 13, 2010 Features •    Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode


    Original     		PDF HAT2285WP REJ03G1371-0310 PWSN0008DB-A temp9044

    HAT2285WP

    Abstract: HAT2285WP-EL-E
    Text: Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1371-0310 High Speed Power Switching Rev.3.10 May 13, 2010 Features •    Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode


    Original     		PDF HAT2285WP REJ03G1371-0310 PWSN0008DB-A Stor9044 HAT2285WP HAT2285WP-EL-E

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    HAT1128R

    Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
    Text: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response


    Original     		PDF RJK0305DPB RJK0331DPB) HAT2188WP RJK2055DPA RJK2057DPA HAT2191WP HAT2192WP HAT2193WP RJK2555DPA RJK2557DPA HAT1128R RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF