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    HF-TRANSISTOR 835 Search Results

    HF-TRANSISTOR 835 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HF-TRANSISTOR 835 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2904

    Abstract: 2sc2904 TRANSISTOR transistor 835 H22A
    Text: 2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz


    Original     		PDF 2SC2904 2SC2904 2sc2904 TRANSISTOR transistor 835 H22A

    siemens CAPACITOR

    Abstract: siemens inductor ACP885 transistor 835 "1u0 1206" D 835 680R BAS40-04W BC848B BCP72
    Text: CGY 0819 GaAs MMIC l l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control


    Original     		PDF Q62702G0076 siemens CAPACITOR siemens inductor ACP885 transistor 835 "1u0 1206" D 835 680R BAS40-04W BC848B BCP72

    siemens inductor

    Abstract: siemens CAPACITOR capacitor 1u0 35v D 835 SIEMENS gaas 680R BAS40-04W BC848B CGY81 transistor 835
    Text: CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match


    Original     		PDF Q627002G0078 siemens inductor siemens CAPACITOR capacitor 1u0 35v D 835 SIEMENS gaas 680R BAS40-04W BC848B CGY81 transistor 835

    Photocoupler Q 817

    Abstract: 727 thyristor PHILIPS WIDEBAND HYBRID IC MODULES transistor 33725 DIODE S4 74 vo 727 z-diode philips catv 860 amplifier ic SNW-EQ-611 tunnel diode GaAs philips OPTICAL PICK-UP
    Text: GENERAL page Quality Pro Electron type numbering system Rating systems Letter symbols CATV parameters Appendix A - Common frequency sets for ddim measurements Appendix B - Common frequency sets for d2 measurements Appendix C - Distortion results using the CENELEC


    Original     		PDF

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


    Original     		PDF twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A

    TRANSISTOR REPLACEMENT GUIDE d882

    Abstract: transistor D1876 TRANSISTOR D412 7403-09FR d1876 transistor SIL-PAD 2000 density transistors D1876 SIL-PAD 3223 Sil Pad A2000 0.015 TR-NWT-000930
    Text: Thermally Conductive Interface Materials for Cooling Electronic Assemblies Sil-Pad S E L E C T I O N G U I D E All statements, technical information and recommendations herein are based on tests we believe to be reliable, and THE FOLLOWING IS MADE IN LIEU OF ALL WARRANTIES,


    Original     		PDF

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    ZEN-10C1AR-A

    Abstract: ZEN-10C1 omron zen ZEN-10C2DR-D schema inverter LCD ZEN-10C1DR-D ZEN-10C ZEN-10C1DT-D omron zen 10c1dr-d omron zen-4ed
    Text: General Specifications Performance Specifications Item Specification ZEN-10C Power supply voltage 100 to 240 VAC Rated power supply voltage 85 to 264 VAC AR-A Item ZEN-10C DR-D 24 VDC Specification Control method Stored program control I/O control method Cyclic scan


    Original     		PDF ZEN-10C ZEN-SOFT01-V2 ZEN-10C1AR-A) ZEN-KIT01-EV2 56/ter ZEN-10C1AR-A ZEN-10C1 omron zen ZEN-10C2DR-D schema inverter LCD ZEN-10C1DR-D ZEN-10C ZEN-10C1DT-D omron zen 10c1dr-d omron zen-4ed

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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    BLW 82

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF bb53T31 BLW 82

    58W SOT

    Abstract: BLW85 ZL18
    Text: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF bbS3T31 BLW85 7Z77540 7Z77541 58W SOT BLW85 ZL18

    2n h 2222a

    Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT


    OCR Scan     		PDF 2N917 O-237 2n h 2222a transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 33T4

    TRANSISTOR TO-106

    Abstract: transistor 2222a to-92 Transistors 2N 2N 2905a pnp transistor
    Text: 33E D METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • 53fl33=ï4 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO Volts Device min VCBO VEBO Volts Volts min min hFE at bias IC VCE ICM PTA PTC mA Volts mA mW W A<A max max 1.2 0.010 min/max max max ICBO VCE sat


    OCR Scan     		PDF 53fl33= lo-32 TRANSISTOR TO-106 transistor 2222a to-92 Transistors 2N 2N 2905a pnp transistor

    2SB963

    Abstract: 2SD1286 T108 T460 TS33 CC OWV W ST
    Text: NEC j m = f = f iS r f K D arlington T ra n s is to r _ 2SD1286 A NPN =l> NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier, Low Speed Switching ftM M -' ! y b > 7 > if x ? t , U nit: mm 'j u —, v w / -i k, 7 y y° n c c o & t i y 7 4 rtò m ià iz M & T to


    OCR Scan     		PDF 2SD1286 2SB963 2SD1286 T108 T460 TS33 CC OWV W ST

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON SD1434 ^ 7 #. K M « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S U HF M O BI L E A P P L I C A T I O N S • 470 MHz . 12.5 VOLTS ■ COMMON EMITTER . P OUT = 45 W MIN. WITH 5.0 dB GAIN PIN CONNECTION 1 4 DESCRIPTION The SD1434 is a 12.5 V Class C epitaxial silicon


    OCR Scan     		PDF SD1434 SD1434

    431202036640 choke

    Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
    Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and


    OCR Scan     		PDF BLW85 QQb3357 431202036640 choke CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit

    MRF458

    Abstract: MRF458 motorola MRF458A 79023 79024 1N4997 56-590-65/3B VK200 W-30 transistor s46
    Text: MOTOROL A sc -c xstrs / r f AT > DE | b B t i 7 a S 4 89D 79021 6 3 6 7 2 5 4 MOTOROLA SC <XSTRS/R F DOTTDSl D “T - 3 3 - / 5 MOTOROLA • SEM ICONDUCTOR MRF458 MRF458A TECHNICAL DATA T h e R F L in e 80 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR


    OCR Scan     		PDF MRF458, MRF458A 007TD24 DT-33 MRF458 MRF458 motorola MRF458A 79023 79024 1N4997 56-590-65/3B VK200 W-30 transistor s46

    2SA1153

    Abstract: SKPT 12 skpt 17 JE 800 transistor SKPT 11 SKPT ft107 c2720 SKPT 17 2/2 2SC2720
    Text: SEC i s h ij Silicon T ra n sisto r 2 S A 1153 p n p x tf * * -> T n * W i > ' z i > i - > 0 X 9 S i J H ; j f c * i i H * > ' <fc t / ' + & S X - f v * > V m PNP Silicon Epitaxial Transistor High Frequency Amplifier, Medium Speed Switching Industrial Use


    OCR Scan     		PDF 2SA1153 f06720 2SA1153 SKPT 12 skpt 17 JE 800 transistor SKPT 11 SKPT ft107 c2720 SKPT 17 2/2 2SC2720

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 1041T060
    Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low


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    upa74ha

    Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
    Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )


    OCR Scan     		PDF uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor

    R096

    Abstract: FN1L4Z
    Text: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&


    OCR Scan     		PDF CycleS50 R096 FN1L4Z

    md918 Transistor

    Abstract: germanium MM2264 2N3050 MC369G
    Text: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­


    OCR Scan     		PDF MC1550G md918 Transistor germanium MM2264 2N3050 MC369G

    BA1A4M-T

    Abstract: BA1A4M 3773A T108 ptc T108 t0429
    Text: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]


    OCR Scan     		PDF PWS10 CycleS50 i0992 BA1A4M-T BA1A4M 3773A T108 ptc T108 t0429