KTC3875S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).
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KTA1504S.
KTC3875S
100mA,
KTC3875S
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KTA2014F
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F.
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KTC4075F
KTA2014F.
270Hz
KTA2014F
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2SC4738FV
Abstract: MARKING LY toshiba 2SA1832FV
Text: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV
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2SC4738FV
2SA1832FV
2SC4738FV
MARKING LY toshiba
2SA1832FV
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PDF
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BD119
Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20
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AD818
AD818DIE
AD820
AD821
AD820DIE
O-204AA/TO-3
BD119
BC148A
APT1002RBNR
1000 volt npn
BD109
APT5025AN
APT904R2BN
BD107
APT1001R3AN
APT1004RBNR
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PDF
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2N2464
Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
Text: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40
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2N1945
O-205AD/TO-39:
2N1958A
2N1959A
2N1973
2N2464
2N2240
2N2655
TO206AA
2C6090
2N2538
2N2201
2N2203
2N1945
2N2453
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PDF
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HN1B26FS
Abstract: No abstract text available
Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 • High hFE : hFE = 120~400 0.35 0.35 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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HN1B26FS
HN1B26FS
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026
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2SA2154
2SC6026
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KTA2014V
Abstract: KTC4075V
Text: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ᴌHigh hFE : hFE=70~700.
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KTC4075V
KTA2014V.
270Hz
KTA2014V
KTC4075V
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PDF
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Untitled
Abstract: No abstract text available
Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 : hFE = 120~400 6 2 5 3 4 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = −0.95 (typ.) • High hFE
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HN1B26FS
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KTA2014V
Abstract: KTC4075V
Text: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ᴌHigh hFE : hFE=70~700.
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KTC4075V
KTA2014V.
270Hz
KTA2014V
KTC4075V
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2SA21
Abstract: 2SA2154 2SC6026
Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026
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2SA2154
2SC6026
2SA21
2SA2154
2SC6026
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KTA2014V
Abstract: KTC4075V
Text: SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.). D 2 ・High hFE : hFE=70~700.
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KTC4075V
KTA2014V.
270Hz
KTA2014V
KTC4075V
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KTA1504S
Abstract: KTC3875S
Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌHigh hFE : hFE=70ᴕ700. 3 G A 2 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
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KTC3875S
KTA1504S.
270Hz
KTA1504S
KTC3875S
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PDF
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KTA1504S
Abstract: KTC3875S
Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A 700. 3 G High hFE : hFE=70 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H Low Noise : NF=1dB(Typ.), 10dB(Max.).
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KTC3875S
KTA1504S.
270Hz
KTA1504S
KTC3875S
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smd marking ly
Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).
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2SC4116
100mA,
smd marking ly
hFE CLASSIFICATION Marking
2SC4116
marking LG -sot23 -led
SMD LY
smd ic marking LY
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PDF
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DSA0038067
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES : hFE 0.1mA /hFE(2mA)=0.95(Typ.). D ・Excellent hFE Linearity 2 H A 3 G ・High hFE : hFE=70～700. 1 ・Low Noise : NF=1dB(Typ.), 10dB(Max.).
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KTC3875S
KTA1504S.
15/-0n
270Hz
DSA0038067
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PDF
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2sc4738ft
Abstract: 2SA1832FT
Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC4738FT
2SA1832FT
2sc4738ft
2SA1832FT
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2sc4738ft
Abstract: 2SA1832FT IC5010
Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC4738FT
2SA1832FT
2sc4738ft
2SA1832FT
IC5010
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC4738FT
2SA1832FT
961001EAA1
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smd transistor LY
Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
Text: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)
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2SC2712
OT-23
smd transistor LY
lg smd transistor
smd transistor marking BL
smd transistor MARKING lg
smd transistor marking LL
smd transistor LL
smd transistor NF
smd marking ly
smd Transistor LG
smd marking LG
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PDF
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FHT945Y
Abstract: FHT945L
Text: ᄰྯ General Purpose Transistors FHT945 General Purpose Transistors ᄰྯ DESCRIPTION & FEATURES 概述及特點 Excellent hFE Linearity hFE 線性特性極好 hFE 0.1mA / hFE(2mA)=0.95(Typ.) High 高 hFE：hFE=70～700 Low Noise低雜訊NF=1dB (Typ.),10dB(Max.)
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OT-23
FHT945
OT-23
FHT945O
FHT945Y
FHT945G
100mA
FHT945L
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise
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2SC2712
150mA
2SC2712G-x-AE3-R
2SC2712G-x-AL3-R
2SC2712L-x-T92-R
2SC2712G-x-T92-R
OT-23
OT-323
OT-23/SOT-323
2SC2712-Y
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2SC2712-G R
Abstract: 2SC2712 TRANSISTOR BL 100 2SC2712-Y 2SC2712G 2SC2712-G 2SC2712L 2SC2712Y IC150 transistor 5 gr
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE
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2SC2712
150mA
OT-23
OT-323
2SC2712L
2SC2712G
2SC2712-x-AE3-R
2SC2712-x-AL3-R
2SC2712L-x-AE3-R
2SC2712G-x-AE3-R
2SC2712-G R
2SC2712
TRANSISTOR BL 100
2SC2712-Y
2SC2712G
2SC2712-G
2SC2712L
2SC2712Y
IC150
transistor 5 gr
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PDF
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ic 556
Abstract: BCW67 BCW67A BCW67B BCW67C BCW68
Text: CDIL BCW67C, 68H BCW67, A, B, C BCW68, F, G, H hFE min. 250 max. 630 min. min. min. 35 60 100 IC = 300 mA; V<;e = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE hFE hFE R A TIN G S at T a = 25°C unless otherwise specified Limiting values Collector-base voltage (open emitter)
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OCR Scan
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BCW67,
BCW68,
BCW67C,
BCW67A,
BCW67B,
ic 556
BCW67
BCW67A
BCW67B
BCW67C
BCW68
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PDF
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