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    IC150 Search Results

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    IC150 Price and Stock

    Rochester Electronics LLC TPIC1502DW

    MOSFET 20V 1.5A 24SOIC
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    DigiKey TPIC1502DW Tube 245
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    Texas Instruments TPIC1502DW

    MOSFET 20V 1.5A 24SOIC
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    DigiKey TPIC1502DW Tube 1,000
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    Rochester Electronics TPIC1502DW 637 1
    • 1 $1.18
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    • 100 $1.11
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    Rochester Electronics LLC MRFIC1502R2

    DOWN CONVERTER
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    DigiKey MRFIC1502R2 Bulk 175
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    Rochester Electronics LLC TPIC1502DWR

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey TPIC1502DWR Bulk 243
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    Rochester Electronics LLC MRFIC1501R2

    RF MOSFET
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    DigiKey MRFIC1501R2 Bulk 175
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    IC150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AB-050-FX3-U

    Abstract: uPD70F3385 FX3U PROGRAMMING MANUAL TXD2 NAIS CN5311 IC173 AB-050-FJ3 MINICUBE Fj3 MAX232ECSE IC-224
    Text: User Manual AB-050-FX3-U 32 V850ES/Fx3 Starter Board All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics Corp. without notice. Please review the latest information published by


    Original
    AB-050-FX3-U V850ES/Fx3 R01UH0115ED0220, Renesas05 10pf/63V/eia0805 100nf/63V/eia0805 GND10 10pf/63V/eia0805 100nf/63V/eia0805 AB-050-FX3-U uPD70F3385 FX3U PROGRAMMING MANUAL TXD2 NAIS CN5311 IC173 AB-050-FJ3 MINICUBE Fj3 MAX232ECSE IC-224 PDF

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


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    PDF

    YTS2222A

    Abstract: transistor marking 1p Z
    Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage


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    500mA YTS2222A 300MHz YTS2907A. 500mA, Ta-25 150mA, YTS2222A transistor marking 1p Z PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ÍDISCRETE/OPTO} ~TD 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR TECHNICAL DATA D Ê J 70772SO 001bS7M H 90D 16274 H G 1 5 0 H 1 Ï LI MG15 0H2CL1 M G 1 5 0 H 2 D L 1 hJ Eu H ffi o m h o £ O TOSHIBA CORPORATION G T I A2A DTr-33-‘35 TOSHIBA _


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    70772SO 001bS7M DTr-33-â DT-33-3Sâ 60TECHNICAL MG150H1FL1 MG150H2DL1 001LE7B PDF

    Untitled

    Abstract: No abstract text available
    Text: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125


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    YTS2222 -50QmA 500mA, YTS2907 VCE-10V, Ic-10mA 150mA 500mA Ic-150tnA 150mA, PDF

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


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    MM4048

    Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea MM4048 BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255 PDF

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06 PDF

    2N4241

    Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


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    NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S PDF

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A PDF

    51t35

    Abstract: J3E diode 5N 2MBI150LB-060 M221 J3E diode
    Text: 2MBI1 50LB-060 15 oa IGBT ‘ Outline Drawings IGBT MODULE • Features • S & X 'f High Speed Switching • i&fS*n$t/± Low Saturation Voltage • B A f i t f — H & it(M O S - y — hfllia) • High Input Impedance Module Packaging •Applications = A


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    50LB-060 51t35 J3E diode 5N 2MBI150LB-060 M221 J3E diode PDF

    KN2222S

    Abstract: KN2222AS
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRA N SISTO R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : I c E x - 1 0 n A M a x . A B ; V c e = 6 0 V , V e b (o f f ) - 3 V .


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    KN2222S/AS 150mA, KN2907S/2907AS. KN2222S KN2222AS 10x8x0 KN2222AS PDF

    TA550c

    Abstract: 2N4033 2N3019 and applications TA-550C 2N5020 2N3019 2N3020 2N4031 550C
    Text: 2N3019 2N 3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ' * •\ • * ’ * V •’ , ¿: u \ r> r 1 ¿ 7 . j * * V / • •' ¿ r . .* i f ^ C M i ? > % - ' l,- - • , • • . i * Í ;•: i Í ■ sir4 : 1 1' ; : ; > * ?• K v y i : r ^ V ; y . ‘£


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    2N3019 2N3020 2N3019, 2N5020 2N4033, 2N4031. IC-150mA 150mA VCE-10V 500mA TA550c 2N4033 2N3019 and applications TA-550C 2N4031 550C PDF

    2SD1657

    Abstract: No abstract text available
    Text: 2SD1657 2SD1657 U □ > NPN x t°^r# ^ 7 7;P7°U’ —i~M /S i NPN Epitaxial Planar Output Amplifier >y@S &f f l / Mut i ng 5 -x — • ft • ffli/ F e a t u r e s , ^ ^ ^ 'y ^ f&iUlEliE VcE sat # v/iN§ ^ 0/ L o w V ce (sat) t >tätfLfr'{&i'\/L0W Ron


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    2SD1657 Ta-25Â 45i8f SC-43 Ic-150 2SD1657 PDF

    2SB1025

    Abstract: 2SB1026 2SD1419 2sb102
    Text: HITACHI 2SB1026 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1419 1. » a * 2. Coiiicior 3. limmer 4. Collector Flange "I (DiiMiiMom» in mill) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE • A SSO LU T E MAXIMUM RATINGS (Ta=25°C)


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    2SB1026 2SD1419 2SBI026 -100V, Ic--150mA -500mA -500mA, -50mA, -l50mA -150inA 2SB1025 2SB1026 2SD1419 2sb102 PDF

    MA7809

    Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea MA7809 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437 PDF

    BC138 TRANSISTOR

    Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    TIL78

    Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222 PDF

    TIL78

    Abstract: photo transistor til78 TIL78 em
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    TIL78

    Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055 PDF

    transistor KN2222A

    Abstract: kn2222a KN2222 Kn2222A transistor 2907A
    Text: SEMICONDUCTOR TECHNICAL DATA KN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.


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    KN2222/A 150mA, KN2907/2907A. KN2222 KN2222A transistor KN2222A kn2222a Kn2222A transistor 2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR SW ITCHING TRANSISTOR FZT2222A ISSUE 3 - OCTOBER 1995 FEATURES * * 40 Volt V CE0 Fast switching C O M P L E M E N T A R Y TYPE P A R T M A R K IN G D ET A IL - FZT2907A FZT2222A ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L


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    OT223 FZT2907A FZT2222A 100MHz 140KBz 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 KHonoHHbie nepeKnronaTenM TMna SP $MpMbl IC npOM3BOflMTenb Pecypc ConpoTMB^eHMe KOHTaKTa ConpoTMB^eHMe M3ormu,MM flMana30H pa6oHMXTeMnepaiyp MaKCMMa^bHaa cwna HawMMa MaTepwan KHonKM MaTepwan Kopnyca


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    flMana30H UL94V-0 IC1507P1B10M1QE IC1107P1B10M1QE n03MUMM PDF