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    HGT1S3N60A4S9A Search Results

    HGT1S3N60A4S9A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGT1S3N60A4S9A Fairchild Semiconductor 600V, SMPS N-Channel IGBT Original PDF
    HGT1S3N60A4S9A Intersil 600V, SMPS Series N-Channel IGBT Scan PDF

    HGT1S3N60A4S9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3n60a4

    Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334
    Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		PDF HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3n60a4 3N60 HGTD3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    3N60A4

    Abstract: HGTD3N60A4S HGTP3N60A4 HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4
    Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		PDF HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3N60A4 HGTD3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4

    3N60A4

    Abstract: HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 TB334
    Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		PDF HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3N60A4 HGTD3N60A4S HGT1S3N60A4S9A TB334