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    HGT1S7N60A4DS9A Price and Stock

    Fairchild Semiconductor Corporation HGT1S7N60A4DS9A

    Insulated Gate Bipolar Transistor, 34A, 600V, N-Channel, TO-263AB '
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    Rochester Electronics HGT1S7N60A4DS9A 326 1
    • 1 $0.7476
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    • 100 $0.7027
    • 1000 $0.6355
    • 10000 $0.6355
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    ComSIT USA HGT1S7N60A4DS9A 243,600
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    HGT1S7N60A4DS9A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGT1S7N60A4DS9A Fairchild Semiconductor 600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGT1S7N60A4DS9A_R4921 Fairchild Semiconductor 600V,SMPS Series N-Channel IGBT wirth Parallel Hyperfast Diode Original PDF

    HGT1S7N60A4DS9A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    7N60A4D

    Abstract: TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS9A HGTG7N60A4D PDF

    g7n60a4d

    Abstract: g7n60a G7N60A4 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D TA49331 TA49370 HGTG*N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. g7n60a4d g7n60a G7N60A4 HGT1S7N60A4DS9A HGTG7N60A4D TA49331 TA49370 HGTG*N60A4D PDF

    7n60a4d

    Abstract: TA49370 TA49331 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS TM Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7n60a4d TA49370 TA49331 HGT1S7N60A4DS9A HGTG7N60A4D PDF

    7N60A4D

    Abstract: TA49370 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D TA49331 7N60A
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49370 HGT1S7N60A4DS9A HGTG7N60A4D TA49331 7N60A PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    7805 DPAK

    Abstract: piezo injector driver CFL 6v inverter circuit schematic diagram free 7805 D2PAK common rail piezo injector driver COMMON RAIL SOLENOID DIRECT INJECTION AN-7522 Common rail injector driver FDDS10H04 7805 sot-223
    Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or


    Original     		PDF

    JESD22-A108

    Abstract: JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD-22-A108 JESD22-A110-b JESD22A110B jesd22a105 igbt qualification circuit
    Text: Date Created: 4/6/2004 Date Issued: 4/19/2004 PCN # 20041405 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL References FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0030402-A. FGB20N6S2D FGB30N6S2 FGB30N6S2T FGH20N6S2 FGH30N6S2D FGH50N3 FGH60N6S2 FGP20N6S2D FGP40N6S2 JESD22-A108 JESD22-A105 JESD22A108 a105 transistor JESD22-A102 JESD-22-A108 JESD22-A110-b JESD22A110B jesd22a105 igbt qualification circuit PDF

    7n60a4d

    Abstract: TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS interrii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS TA49331. TA49370. 7n60a4d TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS9A PDF