Untitled
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMS-350 : 350W POWER Hi-Rel Grade 115 VAC/400Hz Active Power Factor Corrected Variable Frequency 360-800Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module PRELIMINARY • 115 VAC single phase
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Original
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HGMS-350
VAC/400Hz
360-800Hz
MIL-STD-704,
ABD100
HGMS-350
FC05-051
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PDF
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Untitled
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMM-150 : 150W POWER Hi-Rel Grade 115 VAC Active Power Factor Corrected Variable Frequency 360-800Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module • 115 VAC single phase • Permanent input range : 95 - 140 VAC
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Original
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HGMM-150
360-800Hz
MIL-STD-704,
ABD100
HGMM-150
FC11-067
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PDF
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sic-safco capacitor
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMM-150 : 150W POWER Hi-Rel Grade 115 VAC Active Power Factor Corrected Variable Frequency 360-800Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module • 115 VAC single phase • Permanent input range : 95 - 140 VAC
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Original
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HGMM-150
360-800Hz
MIL-STD-704,
ABD100
HGMM-150
FC11-067
sic-safco capacitor
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PDF
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Untitled
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMM-350 : 350W POWER Hi-Rel Grade 115/230 VAC Universal Power Factor Corrected Frequency 45-65Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module • 115/230 VAC single phase • Permanent input range : 85 - 265 VAC
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Original
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HGMM-350
45-65Hz
MIL-STD-704,
MIL-STD-1399
HGMM-350
HGMS-350-Y-T
115/230VAC
50/60Hz
FC05-051
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PDF
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Untitled
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMM-350 : 350W POWER Hi-Rel Grade 115/230 VAC Universal Power Factor Corrected Frequency 45-65Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module • 115/230 VAC single phase • Permanent input range : 85 - 265 VAC
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Original
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HGMM-350
45-65Hz
MIL-STD-704,
MIL-STD-1399
HGMM-350
HGMS-350-Y-T
115/230VAC
50/60Hz
FC05-051
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PDF
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HGMS-150-W-T/T-L/MN
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMM-350 : 350W POWER Hi-Rel Grade 115 VAC Active Power Factor Corrected Variable Frequency 360-800Hz or 47-440Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module • 115 VAC single phase • Permanent input range : 95 - 140 VAC
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Original
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HGMM-350
360-800Hz
47-440Hz
MIL-STD-704,
MIL-STD-1399,
ABD100
HGMM-350
HGMS-150-W-T/T-L/MN
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PDF
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Untitled
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMM-350 : 350W POWER Hi-Rel Grade 115 VAC Active Power Factor Corrected Variable Frequency 360-800Hz or 47-440Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module • 115 VAC single phase • Permanent input range : 95 - 140 VAC
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Original
|
HGMM-350
360-800Hz
47-440Hz
MIL-STD-704,
MIL-STD-1399,
ABD100
HGMM-350
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Hi-Rel AC/DC PFC MODULE HGMM-350 : 350W POWER Hi-Rel Grade 115 VAC Active Power Factor Corrected Variable Frequency 360-800Hz or 47-440Hz Non Isolated Output Metallic Case • AC/DC Non Isolated Power Factor Corrected Module • 115 VAC single phase • Permanent input range : 95 - 140 VAC
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Original
|
HGMM-350
360-800Hz
47-440Hz
MIL-STD-704,
MIL-STD-1399,
ABD100
HGMM-350
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PDF
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HMBT468
Abstract: 304 IR
Text: HI-SINCERITY Spec. No. : HN200204 Issued Date : 2001.07.01 Revised Date : 2004.09.08 Page No. : 1/5 MICROELECTRONICS CORP. HMBT468 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT468 is designed for general purpose low frequency power amplifier applications.
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Original
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HN200204
HMBT468
HMBT468
OT-23
183oC
217oC
260oC
304 IR
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PDF
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649T
Abstract: transistor sb 772 sb 649t HSB649T part mark sb 386 amplifier
Text: HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2004.10.01 Page No. : 1/4 MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126 Absolute Maximum Ratings TA=25°C
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Original
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HT200103
HSB649T
O-126
183oC
217oC
260oC
649T
transistor sb 772
sb 649t
HSB649T
part mark sb
386 amplifier
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PDF
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649T
Abstract: sb 649t HSB649T HT200103 sb649t
Text: HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126 Absolute Maximum Ratings TA=25°C
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Original
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HT200103
HSB649T
O-126
183oC
217oC
260oC
649T
sb 649t
HSB649T
HT200103
sb649t
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PDF
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HSB649A
Abstract: HSD669A
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2002.05.03 Page No. : 1/3 HSD669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSB649A Absolute Maximum Ratings Ta=25°C
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Original
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HE6630
HSD669A
HSB649A
O-126ML
HSB649A
HSD669A
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PDF
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSB649A Absolute Maximum Ratings TA=25°C
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Original
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HE6630
HSD669A
HSB649A
O-126ML
183oC
217oC
260oC
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PDF
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2SB1317
Abstract: 2SD1975
Text: SavantIC Semiconductor Product Specification 2SB1317 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD1975 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier
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Original
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2SB1317
2SD1975
-20mA
2SB1317
2SD1975
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PDF
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|
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2SB1347
Abstract: 2SD2029
Text: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier
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Original
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2SB1347
2SD2029
-160V;
-20mA
2SB1347
2SD2029
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PDF
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HI669A
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2002.09.16 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C
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Original
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HE9004
HI669A
HI669A
O-251
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PDF
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2SB1317
Abstract: 2SD1975
Text: Inchange Semiconductor Product Specification 2SB1317 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1975 ・Wide area of safe operation ・High transition frequency fT ・Optimum for the output stage of a Hi-Fi audio amplifier
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Original
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2SB1317
2SD1975
-20mA
2SB1317
2SD1975
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PDF
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2SD2029
Abstract: 2SB1347
Text: SavantIC Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·Optimum for the output stage of a Hi-Fi audio amplifier applications
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Original
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2SD2029
2SB1347
2SD2029
2SB1347
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PDF
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HM200
Abstract: HM669A
Text: HI-SINCERITY Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 1/4 MICROELECTRONICS CORP. HM669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HM649A SOT-89 Absolute Maximum Ratings TA=25°C
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Original
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HM200205
HM669A
HM649A
OT-89
183oC
217oC
260oC
HM200
HM669A
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PDF
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pj 0159
Abstract: No abstract text available
Text: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency
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OCR Scan
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BFG505;
BFG505/X;
BFG505/XR
BFG505
BFG505
pj 0159
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PDF
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SD1470
Abstract: M168 2n3733 M111 M137 SD4013 M122 S042 SD1050 SD1060
Text: SILICON POWER TRANSISTORS VHF/UHF TRANSISTOR! Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications in the 100 - 500 MHz and 500 - 1000 MHz frequency ranges. Hi-rel screening and qualification testing
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OCR Scan
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SD1050
SD1060
SD1075
SD4012
SD1462
SD1468
SD1470
SD1463
SD1464
2N3375
M168
2n3733
M111
M137
SD4013
M122
S042
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PDF
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Untitled
Abstract: No abstract text available
Text: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended for hi-fi amplifiers and other audio-frequency equipment.
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OCR Scan
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BC264A
tjtiS3T31
0D3S715
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC264A to D _ y \ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended fo r hi-fi amplifiers and other audio-frequency equipment.
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OCR Scan
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BC264A
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PDF
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BC264A
Abstract: BC264D IEC134
Text: BC264A to D J k _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended for hi-fi amplifiers and other audio-frequency equipment. max. 30 V
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OCR Scan
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BC264A
G03S715
BC264D
IEC134
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PDF
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