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    HIGH FREQUENCY MAG AMPS Search Results

    HIGH FREQUENCY MAG AMPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH FREQUENCY MAG AMPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    magnetic amplifier saturable core

    Abstract: L6561 application note L6561 AN966 bc337 pin out diagram circuit diagram of mosfet based smps power supply computer smps circuit diagram L6561 application magnetic-amplifier desktop computer smps circuit diagram smps transformer design
    Text: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of "Magnetic Amplifier" are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a


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    PDF AN1007 L6561 L6561, magnetic amplifier saturable core L6561 application note L6561 AN966 bc337 pin out diagram circuit diagram of mosfet based smps power supply computer smps circuit diagram L6561 application magnetic-amplifier desktop computer smps circuit diagram smps transformer design

    desktop computer smps circuit diagram

    Abstract: magnetic amplifier saturable core Saturable L6561 L6561 AN schematic diagram regulator 12v dc BC337 L6561 application note L6561 AN966 BC337-10
    Text: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of ”Magnetic Amplifier” are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a


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    PDF AN1007 L6561 L6561, desktop computer smps circuit diagram magnetic amplifier saturable core Saturable L6561 AN schematic diagram regulator 12v dc BC337 L6561 application note L6561 AN966 BC337-10

    desktop computer smps circuit diagram

    Abstract: magnetic amplifier saturable core L6561 L6561 AN966 L6561 application note L6561 AN SATURABLE CORE L6561 application stl6561 high frequency mag amps
    Text: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of "Magnetic Amplifier" are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a


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    PDF AN1007 L6561 L6561, desktop computer smps circuit diagram magnetic amplifier saturable core L6561 AN966 L6561 application note L6561 AN SATURABLE CORE L6561 application stl6561 high frequency mag amps

    cic filter for digital down converter

    Abstract: HSP50214 MUX 8-1 Dual 4-1 MUX 8 INPUT 4 OUTPUT MUX
    Text: A Digital Programmable Downconverter for AMPS, North American TDMA, GSM and CDMA Signal Applications Designed For Wideband and Narrowband Sampling Applications; 12.8 MHz Usable Bandwidth with 3:1 Analog Antialiasing Filter ; Minimum 84 dB Dynamic Range Cartesian


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    PDF HSP50214 35MHz cic filter for digital down converter MUX 8-1 Dual 4-1 MUX 8 INPUT 4 OUTPUT MUX

    MF1151V-2

    Abstract: No abstract text available
    Text: MF1151V-2 FOR AMPS MOBILE TELEPHONE, Tx MF1151V-2 DESCRIPTION FEATURES MF1151V-2 TYPICAL CHARACTERISTICS This SAW filter for the transmitting RF circuit of AMPS mobile communication equipment operating at 824 MHz ~ 849 MHz. 1. SMD package insures small size, lightweight.


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    PDF MF1151V-2 MF1151V-2

    MF1151V-2

    Abstract: No abstract text available
    Text: Back to CONTENTS MF1151V-2.0 FOR AMPS MOBILE TELEPHONE, Tx MF1151V-2.0 DESCRIPTION FEATURES This SAW filter for the transmitting RF circuit of AMPS mobile communication equipment operating at 824 MHz ~ 849 MHz. MF1151V-2.0 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.


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    PDF MF1151V-2 MF1151V-2

    MF1010S-1

    Abstract: No abstract text available
    Text: MF1010S-1 FOR AMPS MOBILE TELEPHONE, Tx MF1010S-1 DESCRIPTION FEATURES MF1010S-1 TYPICAL CHARACTERISTICS This SAW filter for the transmitting RF circuit of AMPS mobile communication equipment operating at 824 MHz ~ 849 MHz. 1. SMD package insures small size, lightweight.


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    PDF MF1010S-1 MF1010S-1

    MF1009S-1

    Abstract: No abstract text available
    Text: MF1009S-1 FOR AMPS MOBILE TELEPHONE, Rx MF1009S-1 DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of AMPS mobile communication equipment operating at 869 MHz ~ 894 MHz. MF1009S-1 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.


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    PDF MF1009S-1 MF1009S-1

    MF1150V-2

    Abstract: No abstract text available
    Text: MF1150V-2 FOR AMPS MOBILE TELEPHONE, Rx MF1150V-2 DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of AMPS mobile communication equipment operating at 869 MHz ~ 894 MHz. MF1150V-2 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.


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    PDF MF1150V-2 MF1150V-2

    Untitled

    Abstract: No abstract text available
    Text: Back to CONTENTS MF1196V-1.0 FOR AMPS MOBILE TELEPHONE, Rx MF1196V-1.0 DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of AMPS mobile communication equipment operating at 869 MHz ~ 894 MHz. MF1196V-1.0 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.


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    PDF MF1196V-1

    MF1150V-2

    Abstract: No abstract text available
    Text: Back to CONTENTS MF1150V-2.0 FOR AMPS MOBILE TELEPHONE, Rx MF1150V-2.0 DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of AMPS mobile communication equipment operating at 869 MHz ~ 894 MHz. MF1150V-2.0 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.


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    PDF MF1150V-2 MF1150V-2

    polyphase cic decimation filter

    Abstract: No abstract text available
    Text: A Digital Programmable Downconverter for AMPS, North American TDMA, GSM and CDMA Signal Applications Designed For Wideband and Narrowband Sampling Applications; 12.8 MHz Usable Bandwidth with 3:1 Analog Antialiasing Filter ; Minimum 84 dB Dynamic Range Cartesian


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    PDF HSP50214 35MHz 52MHz polyphase cic decimation filter

    Block Diagram CIC Filter

    Abstract: 8 INPUT 4 OUTPUT MUX digital Serial FIR Filter "narrowband sampling" HSP50214 Parallel FIR Filter cic filter for digital down converter polyphase cic decimation filter
    Text: A Digital Programmable Downconverter for AMPS, North American TDMA, GSM and CDMA Signal Applications Designed For Wideband and Narrowband Sampling Applications; 12.8 MHz Usable Bandwidth with 3:1 Analog Antialiasing Filter ; Minimum 84 dB Dynamic Range Cartesian


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    PDF HSP50214 sp214bde FO-006 Block Diagram CIC Filter 8 INPUT 4 OUTPUT MUX digital Serial FIR Filter "narrowband sampling" Parallel FIR Filter cic filter for digital down converter polyphase cic decimation filter

    transistor 8730

    Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


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    PDF UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240

    transistor K 2937

    Abstract: TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor
    Text: SILICON TRANSISTOR UPA806T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz


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    PDF NE685 UPA806T UPA806T 24-Hour transistor K 2937 TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor

    TRANSISTOR C 6090 npn

    Abstract: TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 NE685 S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz


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    PDF UPA806T NE685 UPA806T 24-Hour TRANSISTOR C 6090 npn TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 S21E

    Untitled

    Abstract: No abstract text available
    Text: Cellular & DCS/PCS Band Directional Couplers ◆ Features: • Models to Cover ESMR/AMPS/ETACS/ EGSM & DCS/PCS Frequency Bands • Single and Dual Loop Models • Low Insertion Loss: 0.1 dB typical • High Directivity: 30 dB minimum • Low Intermodulation: -110 dBm maximum


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    PDF WSDC-00003 WSDDC-00002 WSDDC-00003

    Untitled

    Abstract: No abstract text available
    Text: Cellular & DCS/PCS Band Directional Couplers Features: • Models to Cover ESMR/AMPS/ETACS/ EGSM & DCS/PCS Frequency Bands • Single and Dual Loop Models • Low Insertion Loss: 0.1dB typical • High Directivity: 30dB minimum • Low Intermodulation: -110dBm maximum


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    PDF -110dBm 800-980MHz 1700-2000MHz 43dBm

    A-A 52081

    Abstract: CI 7408 LOG RX 2 mf 3420 FAR-G5CN-877M50-D292 FAR-G5CN-942M50-D294 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L224 FAR-G6CH-1G8800-L214
    Text: ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for handheld phones continues to increase, so has demand for smaller size, lighter weight and lower cost. Dual band phones, such as GSM + PCN and AMPS + PCS, are rising in popularity. To support these


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    Untitled

    Abstract: No abstract text available
    Text: MF1 009S-1 FOR AMPS MOBILE TELEPHONE, Rx DESCRIPTION FEATURES This S A W filte r fo r the receiving RF circuit of AMPS m o b ile c o m m u n ic a tio n 1. SM D package insures sm all size, lightw eight. e q u ip m e n t 2. A d justm e nt free. 3. Low insertion loss.


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    PDF 009S-1

    Untitled

    Abstract: No abstract text available
    Text: MF1 01 OS-1 FOR AMPS MOBILE TELEPHONE, Tx DESCRIPTION FEATURES This SA W filte r fo r the transm itting RF circuit 1. SM D package insures sm all size, lightw eight. o f A M P S m o b ile c o m m u n ic a tio n e q u ip m e n t 2. A d justm e nt free. 3. L o w in s e r tio n lo s s a n d h ig h s to p b a n d


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    RF7000

    Abstract: RCA 836 network resistor L1C8
    Text: TRF7000 POWER GaAs MESFET SLWS027- JULY 1996 • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical - at 29 dBm Output Power, 30% PAE Typical • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively


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    PDF TRF7000 SLWS027- OT-89 F7000 1000pF RF7000 RCA 836 network resistor L1C8

    ls 7413 n

    Abstract: V 8623 transistor UPA800T HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor
    Text: UPA800T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: • HIGH GAIN: • EXCELLENT LOW VOLTAGE, LOW CURRENT


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    PDF NE680 UPA800T UPA800T 24-Hour ls 7413 n V 8623 transistor HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor

    TRANSISTOR C 6090 npn

    Abstract: transistor 9527 BJT 5240 k 3531 transistor CD 14603
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S 2 1 E|2 = 8.5 dB TYP at 2 GHz . HIGH GAIN BANDW IDTH: It = 12 GHz


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    PDF NE685 UpA806T UPA806T 24-Hour TRANSISTOR C 6090 npn transistor 9527 BJT 5240 k 3531 transistor CD 14603