Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HIGH POWER BIPOLAR TRANSISTOR SELECTION Search Results

    HIGH POWER BIPOLAR TRANSISTOR SELECTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER BIPOLAR TRANSISTOR SELECTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STN0214

    Abstract: N0214 Power Bipolar Transistor
    Text: STN0214 Very high voltage NPN power transistor Features • High gain ■ Very high voltage capability 4 Applications 1 ■ Haptic ■ High voltage solenoid driving 2 3 SOT-223 Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage


    Original     		PDF STN0214 OT-223 N0214 OT-223 STN0214 Power Bipolar Transistor

    2sc5200

    Abstract: 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram 2sc5200 power amplifiers diagram 2sc5200 amplifiers circuit diagram TRANSISTOR 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifiers circuits diagram 2Sc5200 TRANSISTOR schematic diagram power amplifier 2sc5200 transistor
    Text: 2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description 1 2 3 TO-264 This device is a NPN transistor manufactured


    Original     		PDF 2SC5200 O-264 2sc5200 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram 2sc5200 power amplifiers diagram 2sc5200 amplifiers circuit diagram TRANSISTOR 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2sc5200 amplifiers circuits diagram 2Sc5200 TRANSISTOR schematic diagram power amplifier 2sc5200 transistor

    bipolar transistor ghz s-parameter

    Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
    Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in


    Original     		PDF HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10

    2sd1047

    Abstract: transistor 2sd1047 2SD1047 transistor
    Text: 2SD1047 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured


    Original     		PDF 2SD1047 2SD1047 transistor 2sd1047 2SD1047 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2STA1943 High power PNP epitaxial planar bipolar transistor PRELIMINARY DATA Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5200 ■ Fast-switching speed ■ Typical fT= 30MHz Description 1 This device is a PNP transistor manufactured


    Original     		PDF 2STA1943 -230V 2STC5200 30MHz O-264 2STA1943 O-264

    T13005

    Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"
    Text: STT13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications


    Original     		PDF STT13005 OT-32 T13005 STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC

    schematic diagram motor control

    Abstract: schematic diagram motor BUV298V JESD97
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC schematic diagram motor control schematic diagram motor BUV298V JESD97

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC 200ot

    2Sta1943

    Abstract: 2STC5200 JESD97 TRANSISTOR POWER AMPLIFIER
    Text: 2STA1943 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5200 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ 1 Audio power amplifier 2 3 TO-264 Description This device is a NPN transistor manufactured


    Original     		PDF 2STA1943 -230V 2STC5200 O-264 2Sta1943 2STC5200 JESD97 TRANSISTOR POWER AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured


    Original     		PDF 2STA1962 -230V 2STC5242 2STA1962

    Untitled

    Abstract: No abstract text available
    Text: 2STC5242 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured


    Original     		PDF 2STC5242 2STA1962 2STC5242

    2STA1962

    Abstract: 2STC5242 JESD97
    Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured


    Original     		PDF 2STA1962 2STC5242 2STA1962 2STC5242 JESD97

    2STC5242

    Abstract: 2STA1962 JESD97
    Text: 2STC5242 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1962 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a NPN transistor manufactured


    Original     		PDF 2STC5242 2STA1962 2STC5242 2STA1962 JESD97

    2sta2121

    Abstract: 2STC5949 JESD97
    Text: 2STC5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2STA2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured


    Original     		PDF 2STC5949 2STA2121 O-264 2sta2121 2STC5949 JESD97

    2STC5200

    Abstract: 2STA1943 JESD97
    Text: 2STC5200 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1943 ■ Fast-switching speed ■ Typical fT = 30 MHz Application ■ 1 Audio power amplifier 2 3 TO-264 Description This device is a NPN transistor manufactured


    Original     		PDF 2STC5200 2STA1943 O-264 2STC5200 2STA1943 JESD97

    RF Transistor s-parameter

    Abstract: HBFP-0450 ADS MODEL HBFP0450
    Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium


    Original     		PDF HBFP-0450 OT-343 SC-70) 031-inch 5968-2788E RF Transistor s-parameter HBFP-0450 ADS MODEL HBFP0450

    2ST5949

    Abstract: 2ST2121 JESD97
    Text: 2ST5949 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ 1 Audio power amplifier 2 TO-3 Description The device is a NPN transistor manufactured


    Original     		PDF 2ST5949 2ST2121 2ST5949 2ST2121 JESD97

    2sc5200 amplifier circuit

    Abstract: 2SC5200 2sc5200 amplifier circuit diagram TRANSISTOR 2SC5200 2sc5200 amplifier schematic diagram power amplifier 2sc5200 transistor 2SC5200 Technical Data 2sc5200 transistor data 2sc5200 transistor transistor l 2050
    Text: 2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz s ct Application ■ u d o Audio power amplifier r P e Description 1 2 3 TO-264 This device is a NPN transistor manufactured


    Original     		PDF 2SC5200 O-264 2SC5200 O-264 2sc5200 amplifier circuit 2sc5200 amplifier circuit diagram TRANSISTOR 2SC5200 2sc5200 amplifier schematic diagram power amplifier 2sc5200 transistor 2SC5200 Technical Data 2sc5200 transistor data 2sc5200 transistor transistor l 2050

    Untitled

    Abstract: No abstract text available
    Text: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier s


    Original     		PDF 2STA1837 2STC4793 O-220FP

    Untitled

    Abstract: No abstract text available
    Text: 2STC4793 NPN power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1837 ■ High transition frequency, typical fT = 100 MHz s ct Applications ■ Audio power amplifier ■ Drive stage amplifier


    Original     		PDF 2STC4793 2STA1837 O-220FP

    Untitled

    Abstract: No abstract text available
    Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Preliminary Data Features • High breakdown voltage VCEO > -230V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT= 30MHz 3 Application 2 1 Audio power amplifier TO-3P Description


    Original     		PDF 2STA1962 -230V 2STC5242 30MHz 2STA1962

    st marking code

    Abstract: No abstract text available
    Text: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier 3 1 2


    Original     		PDF 2STA1837 2STC4793 O-220FP st marking code

    RBSOA

    Abstract: transistor crossover
    Text: SWITCHING TRANSISTOR FUNDAMENTALS The advances in the technology of bipolar switching power transistors have resulted in devices which com­ bine high-voltage capability, speed, and ruggedness previously thought impossible to obtain in a single transistor. As an example, General Semiconductor


    OCR Scan     		PDF 2N6925A RBSOA transistor crossover