T13005
Abstract: T13005D T1300 STT13005D
Text: T13005D High voltage fast-switching NPN power transistor Features • Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting
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STT13005D
OT-32
T13005
T13005D
T1300
STT13005D
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Untitled
Abstract: No abstract text available
Text: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev - PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage
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T1300
10MHz,
15pF/10kohm
10msec
T1300-5
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SOT-32FP
Abstract: STT13005 electronic ballast for fluorescent lighting electronic ballast for fluorescent lightings ibm rev.1.5 T13005 15663
Text: T13005FP High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting
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STT13005FP
OT-32FP
SOT-32FP
STT13005
electronic ballast for fluorescent lighting
electronic ballast for fluorescent lightings
ibm rev.1.5
T13005
15663
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spw 080
Abstract: LEM3225 CL-2M2012-900JT TKS 0603 FBM3216HS800-T ACB2012M-150-T LAL04TB 494LYF FBM2125HS420-T m5258
Text: CT Technologies - Cross Reference Competitor Part CTC Part 0402R CT0402CSF 0402CS-P CT0402CSF 0402CS L CT0402CSF 0402CS CT0402CSF 0402 CT0402CSF 555-0402 CT0402CSF PE-0402CD CT0402CSF 0402AS CT0402CSF ELJNK CT0402CSF GLZG CT0402CSF KQ0402 CT0402CSF KQT0402L
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0402R
CT0402CSF
0402CS-P
0402CS
spw 080
LEM3225
CL-2M2012-900JT
TKS 0603
FBM3216HS800-T
ACB2012M-150-T
LAL04TB
494LYF
FBM2125HS420-T
m5258
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Untitled
Abstract: No abstract text available
Text: SiS612EDNT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)f, g 50 50 50 RDS(on) () Max. 0.0039 at VGS = 4.5 V 0.0042 at VGS = 3.7 V 0.0058 at VGS = 2.5 V • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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SiS612EDNT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V
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SiS496EDNT
SiS496EDNT-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev F PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage
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Original
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T1300
10MHz,
15pF/10kohm
2x10-6
1x10-7
8x10-11
10MHz)
10msec
7x10-11/g,
T1300-5
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Untitled
Abstract: No abstract text available
Text: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev C PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage
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Original
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T1300
10MHz,
15pF/10kohm
10MHz)
10msec
T1300-5
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Untitled
Abstract: No abstract text available
Text: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev E PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage
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T1300
10MHz,
15pF/10kohm
10MHz)
10msec
T1300-5
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STT1
Abstract: 0016114E JESD97 STT13005D T13005
Text: T13005D High voltage fast-switching NPN power transistor Features • Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting
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STT13005D
OT-32
STT1
0016114E
JESD97
STT13005D
T13005
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Untitled
Abstract: No abstract text available
Text: T13005FP High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005FP
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Untitled
Abstract: No abstract text available
Text: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a
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SiS435DNT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)f 0.0110 at VGS = - 10 V - 50e 0.0195 at VGS= - 4.5 V - 43.5 VDS (V) - 30 • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package
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SiS439DNT
SiS439DNT-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Package Information www.vishay.com Vishay Siliconix PowerPAK 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013
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1212-8T
T13-0056-Rev.
18-Feb-13
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Untitled
Abstract: No abstract text available
Text: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height
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SiS322DNT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ELECTRONIC BALLAST transistor DIAGRAM
Abstract: STT13005FP 15663
Text: T13005FP High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005FP
OT-32FP
ELECTRONIC BALLAST transistor DIAGRAM
STT13005FP
15663
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T13005
Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"
Text: T13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications
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STT13005
OT-32
T13005
STT13005
0016114E
JESD97
st 125mA dc dc
NPN POWER TRANSISTOR "SOT-32"
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Untitled
Abstract: No abstract text available
Text: SiS429DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) d 0.021 at VGS = -10 V -20 e 0.034 at VGS = -4.5 V -18.7 • • • • Qg (TYP.) 15 nC Thin PowerPAK 1212-8 Single D D 8
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SiS429DNT
SiS429DNT-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V
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SiS496EDNT
SiS496EDNT-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005
OT-32
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T13005
Abstract: STT13005 0016114E JESD97
Text: T13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005
OT-32
T13005
STT13005
0016114E
JESD97
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Untitled
Abstract: No abstract text available
Text: SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) a 0.024 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 3.8 nC • Thin 0.8 mm profile
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SiS822DNT
SiS822DNT-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7615BDNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.0054 at VGS = -4.5V 0.0060 at VGS = -3.7 V 0.0083 at VGS = -2.5 V 0.0140 at VGS = -1.8 V -20 ID (A) a Qg (TYP.) -30 a 57 nC • TrenchFET Gen III P-Channel Power MOSFET
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Si7615BDNT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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75w75
Abstract: UMT13004 UMT13005 SZ-17
Text: POWER TRANSISTORS U MT13004 U T13005 4A, 700V, Fast Switching, Silicon NPN Mesa FEATU RES DESCRIPTION • • • • • • These high voltage glass passivated power transistors, in a plastic T0-220AB package, combine fast switching, low saturation voltage and rugged E s/b capability. They are
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UMT13004
UMT13005
T0-220AB
SZ173
S61-65Ã
75w75
UMT13005
SZ-17
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