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    HONEYWELL MEMORY SRAM Search Results

    HONEYWELL MEMORY SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    HONEYWELL MEMORY SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HXSR06432

    Abstract: S150 86-LEAD honeywell memory sram
    Text: PRELIMINARY HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , radiation hardened 64M Honeywell’s state-of-the-art S150 technology is bit Static Random Access Memory (SRAM) in a 2M x radiation hardened through the use of advanced and 32 configuration is a high performance 2,097, 152 word


    Original     		PDF HXSR06432 512kx32 150nm 400product 22CFR HXSR06432 S150 86-LEAD honeywell memory sram

    HX6228

    Abstract: honeywell memory sram
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Honeywe-8295 HX6228 honeywell memory sram

    HLXSR01608

    Abstract: No abstract text available
    Text: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit


    Original     		PDF HLXSR01608 HLXSR01608 16Mbit 150nm 110mW 40MHz

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Hone8295

    Untitled

    Abstract: No abstract text available
    Text: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is


    Original     		PDF HLX6256 ADS-14228

    Untitled

    Abstract: No abstract text available
    Text: HXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HXSR01632 32-bit 150nm ADS-14154

    Untitled

    Abstract: No abstract text available
    Text: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HLXSR01608 150nm ADS-14218

    HXSR01608

    Abstract: No abstract text available
    Text: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HXSR01608 150nm ADS-14155 HXSR01608

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 HLX6228 128K x 8 STATIC RAM—Low Power SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is


    Original     		PDF HLX6228 ADS-14207

    HX6408

    Abstract: No abstract text available
    Text: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low


    Original     		PDF HRT6408 150nm ADS-14194 HX6408

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation


    Original     		PDF HLX6228 360mW 40MHz ADS-14207

    Untitled

    Abstract: No abstract text available
    Text: HLX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation


    Original     		PDF HLX6256 400mW 40MHz ADS-14228

    HLXSR01632

    Abstract: No abstract text available
    Text: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HLXSR01632 32-bit 150nm ADS-14217 HLXSR01632

    Untitled

    Abstract: No abstract text available
    Text: HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM. The SRAM MCM consists of four 512k x 32 SRAM die fabricated with Honeywell’s 150nm silicon-on-insulator CMOS (S150) technology.


    Original     		PDF HXSR06432 32-bit 150nm ADS-14173

    Untitled

    Abstract: No abstract text available
    Text: HX6408 512K x 8 STATIC RAM The monolithic 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems


    Original     		PDF HX6408 710mW 40MHz ADS-14132

    Untitled

    Abstract: No abstract text available
    Text: HX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems


    Original     		PDF HX6256 600mW 40MHz ADS-14227

    Untitled

    Abstract: No abstract text available
    Text: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industrystandard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage


    Original     		PDF HLX6256

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems


    Original     		PDF HX6228 1000mW 40MHz ADS-14206

    Untitled

    Abstract: No abstract text available
    Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly


    OCR Scan     		PDF HC80805 1x10s 1x109 1x102upsets/module-day) BADDR11 BARRD10 BDISCRI03 BDISCRI02 BDISCRI01 BADDR21

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec


    OCR Scan     		PDF 1x106 1x101 1x109 HC80805 BADDR16 BADDR15 122-lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x106 1x101 1x109 0GD1755

    AVW smd

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x101 1x109 200-Lead AVW smd

    Untitled

    Abstract: No abstract text available
    Text: fc.3E D 45S1Ô72 GDD 1 G1 1 H ONEYÙI EL L/ S 11T Honeywell *H0N3 S E C Advance Information 256K X 8 RADIATION-TOLERANT SRAM HC80820 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Spare Memory Chip can be Substituted On-The-Fly • Soft Error Rate of <1x10 5upsets/bit-day


    OCR Scan     		PDF HC80820 BADDR11 BARRD10 BDISCRI02 BDISCRI01 BADDR21 BADDR20 BADDR19 BADDR18 BADDR17

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)


    OCR Scan     		PDF HX84050 1x106 1x10s 200-Lead