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    HUF76121D3ST Price and Stock

    Rochester Electronics LLC HUF76121D3ST

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121D3ST Bulk 683
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    Fairchild Semiconductor Corporation HUF76121D3ST

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    Bristol Electronics HUF76121D3ST 1,069
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    Quest Components HUF76121D3ST 2,029
    • 1 $0.96
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    HUF76121D3ST 1,964
    • 1 $1.785
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    Rochester Electronics HUF76121D3ST 59,388 1
    • 1 $0.4225
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    Harris Semiconductor HUF76121D3ST

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,20A I(D),TO-252AA
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    Quest Components HUF76121D3ST 7,500
    • 1 $0.96
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    HUF76121D3ST Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76121D3ST Fairchild Semiconductor 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Original PDF
    HUF76121D3ST Fairchild Semiconductor 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76121D3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76121d

    Abstract: TA76121 transistor 76121D AN7254 AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76121D3, HUF76121D3S 76121d TA76121 transistor 76121D AN7254 AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334

    76121D

    Abstract: No abstract text available
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76121D3, HUF76121D3S 76121D

    76121D

    Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76121D3, HUF76121D3S O-252AA 330mm EIA-481 76121D AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334

    76121D

    Abstract: HUF76121D3 power Diode 20A/30v transistor 76121D AN7254 AN9321 AN9322 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76121D3, HUF76121D3S 76121D HUF76121D3 power Diode 20A/30v transistor 76121D AN7254 AN9321 AN9322 HUF76121D3S HUF76121D3ST TB334

    DPAK JEDEC OUTLINE

    Abstract: 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a
    Text: Date Created: 3/3/2004 Date Issued: 3/11/2004 PCN # 20033404-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0033404-A fairchildsem419D3ST HUF76429D3S HUF76609D3S HUF76619D3S HUF76629D3S ISL9N306AD3 ISL9N308AD3 ISL9N310AD3ST ISL9N315AD3 DPAK JEDEC OUTLINE 12SNOFC Tamac4 eme6600cs KFC 1/2H 90Pb10Sn ISL9N2357D3ST application notes ISL9N306AD TAMAC-4 fdd6512a

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    76121D

    Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76121D3, HUF76121D3S 76121D AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30 V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76121D3, HUF76121D3S O-252AA T0-252AA 330mm

    76121D

    Abstract: F76121D3S
    Text: interrii HUF76121D3, HUF76121D3S D a ta S h e e t 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76121D3, HUF76121D3S HUF76121D3S AN7260. 76121D F76121D3S

    Untitled

    Abstract: No abstract text available
    Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30 V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76121D3, HUF76121D3S HUF76121D3S T0-252AA EIA-481