HY5118160
Abstract: HY5118160BTC HY5118160B
Text: HY5118160B,HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5118160B
HY5116160B
1Mx16,
16-bit
1Mx16
HY5118160
HY5118160BTC
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PDF
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HY5118160C
Abstract: HY5116160C HY5118160CJC
Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5118160C
HY5116160C
1Mx16,
16-bit
1Mx16
HY5116160C
HY5118160CJC
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PDF
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HY5116160C
Abstract: HY5118160C
Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5118160C
HY5116160C
1Mx16,
16-bit
1Mx16
10/Sep
HY5116160C
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PDF
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HY5118160C
Abstract: No abstract text available
Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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Original
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HY5118160C
HY5116160C
1Mx16,
16-bit
1Mx16
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM564200 X-Series 2M X 64-bit CMOS ORAM MODULE D E S C R IP T IO N The HYM564200 is a 2M x 64-bit Fast page m ode CMOS DRAM m odule consisting o f eight HY5116160 in 42/42 pin SOJ, tw o 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board.
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OCR Scan
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HYM564200
64-bit
HY5116160
16-bit
HYM564200XG/SLXG
A0-A11
RAS0-RA53)
DQ0-DQ63)
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PDF
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rau2
Abstract: 1A011
Text: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116160
16-bit
16-bit.
Y5116160
1AD11-10-MAY95
HY5116160JC
HY5116160SLJC
rau2
1A011
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PDF
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HY5118160
Abstract: HY5118160C
Text: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5118160C
HY5116160C
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
HY5118160
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PDF
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HY5118160BTC
Abstract: hy5118160b
Text: "HYUNDAI HY5118160B, HY5116160B _ DESCRIPTION 1M x 16bit CMOS DRAM ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high
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OCR Scan
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HY5118160B,
HY5116160B
16bit
HY5118160BJC
HY5118160BSLJC
HY5118160BTC
HY5118160BSLTC
HY5116160BJC
HY5116160BSLJC
HY5116160BTC
hy5118160b
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PDF
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116160
16-bit
16-bit.
HY5116160
1AD11-10-MAY94
HY5116160JC
HY5116160SLJC
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PDF
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wj da11 pin
Abstract: 22TCW
Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5116160B
16-bit.
1AD53-10-MAY95
HY5116160BJC
HY5116160BSLJC
HY5116160BTC
wj da11 pin
22TCW
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM564100 X-Series IM X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564100 is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY5116160 in 42/42pin SOJ, two 16-bit and one 4-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22p.F
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OCR Scan
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HYM564100
64-bit
HY5116160
42/42pin
16-bit
HYM564100XG/SLXG
A0-A11
DQ0-DQ63)
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PDF
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Untitled
Abstract: No abstract text available
Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5116160
16-bit.
HY5116160
1AD11-10-MAY95
HY5116160JC
HY5116160SLJC
HY5116160TC
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PDF
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HY5116160
Abstract: No abstract text available
Text: H Y 5 1 1 6 1 6 0 «HYUNDAI S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5116160
16-bit.
1AD11-10-MAY94
HY5116160JC
HY5116160SLJC
HY5116160TC
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 6 1 6 0 B Series 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5116160B
16-bit.
HY5116160B
404fl0aea
1AD53-10-MAY95
HY5116160BJC
HY5116160BSLJC
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5116800 Series • H Y UN D A I 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116800
HY5116800
1AD07-10-MAV94
0Q0313&
HY5116800JC
HY5116800SLJC
HY5116800TC
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B ,H Y 5 1 1 6 1 6 0 B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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1Mx16,
16-bit
1Mx16
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PDF
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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OCR Scan
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HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5116800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116800
1AD07-10-MAY94
HY5116800JC
HY5116800SLJC
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PDF
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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OCR Scan
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256KX4)
HY531000AJ
HY531000ALJ
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
HY512260SLJC
HY512264JC
HY512264LJC
HY5116400BT
HY5117400CJ
50-PIN
HY5117804BT
TSOP-II 44
26-PIN
HY5118160BJ
hy51v65804
HY5117400BJ
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PDF
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TAA 981
Abstract: HY5118160 HY5118160JC
Text: HY5118160 Series “HYUNDAI IM X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5118160
16-bit
16-bit.
1AD15-10-MAY94
HY5118160JC
TAA 981
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PDF
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r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
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OCR Scan
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256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
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PDF
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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OCR Scan
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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PDF
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HY5118160
Abstract: No abstract text available
Text: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5118160
16-bit.
HY5118160
1AD15-10-MAY94
4b75Dflfl
322fi
HY5118160JC
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PDF
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HY5118160
Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE
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OCR Scan
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256K-bits
HY53C256.
HY53C464
HY531000.
DB101-20-MAY94
HY5118160
256K 4bit DRAM
HY514260
HY51426
HY51V16100
HY531000
4K x 1 DRAM
256k 8bit
512k 4bit
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PDF
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