Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling
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OCR Scan
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HYM536220
36-bit
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
DQ0-DQ35)
4b750flfl
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PDF
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Untitled
Abstract: No abstract text available
Text: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000C
HY531000A
HYM591000CM/CLM
1BB08-10-MAY93
1BB08-10-MAYM
1BB08-10-MAVM
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PDF
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HYM5361
Abstract: HYM536100AMG hym536100
Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling
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OCR Scan
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36-bit
HYM536100Ais
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-00-MAYW
HYM536100A
1CC04-00-MAY93
HYM5361
HYM536100AMG
hym536100
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PDF
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Untitled
Abstract: No abstract text available
Text: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling
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OCR Scan
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HYM536120A
36-bit
HY5118160B
HY531000A
22nFdecoupling
HYM536120AW/ALW
HYM536120AWG/ALWG
DQ0-DQ35)
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PDF
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HYM536220
Abstract: HY5118160 HYM536220W70
Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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OCR Scan
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HYM536220
36-bit
HYM536220
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
1cd06-01-sep94
HYM536220W70
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY531000A
300mil
1AB05-10-APR93
HY531000AS
HY531000ALS
HY531000AJ
HY531000AU
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PDF
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I H Y 5 3 1 A S e r i e s 1M X 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY531000A
HY531000Ato
300mil
1AB05-10-APR94
HY531000AS
HY531000ALS
HY531000AJ
HY531000AU
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM581000C
HY531000A
22/iF
HYM581000CM/CLM
1BB07-10-M
G0Q174S
DDQ17M3
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PDF
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HYM536100A
Abstract: No abstract text available
Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling
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OCR Scan
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HYM536100A
36-bit
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
132-OmW
DGG20b4
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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OCR Scan
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HYM536100A
36-bH
36-bit
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
DQ0-DQ35)
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PDF
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HYM536200AM
Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
Text: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling
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OCR Scan
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HYM536200A
36-blt
36-bit
HY514400A
HY531000A
HYM536200AM/ALM
HYM536200AMG/ALMG
11CD04-00-MAY93
36200A
HYM536200AM
WE005
HYM536200Aibm pc 700M/ALM
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PDF
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hy5118160b
Abstract: No abstract text available
Text: «HYUNDAI HYM536220A W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000Ain 20/26pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling
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OCR Scan
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HYM536220A
36-bit
HY5118160B
HY531000Ain
20/26pin
22nFdecoupling
HYM536220AW/LW
HYM536220AWG/LWG
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PDF
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Yundai
Abstract: No abstract text available
Text: • HY531000A 1Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1-bit c o n fig u ra tio n w ith F a st P age m ode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design
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OCR Scan
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HY531000A
HY531000ALS
HY531000ALJ)
Yundai
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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HYM581000C
HY531000A
22fiF
HYM581000CM/CLM
1BB07-10-M
1BB07-10-MAY93
1BB07-1
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PDF
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HYM536200AM60
Abstract: 00S11
Text: • H Y U N D A I H Y M 5 3 6 2 A M - S e r î e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling
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OCR Scan
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HYM536200A
36-bit
HY514400A
HY531000A
22nFdecoupling
HYM536200AM/ALM
HYM536200AMG/ALMG
06QI127
HYM536200AM60
00S11
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PDF
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HYM536100AM
Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
Text: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina
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OCR Scan
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HYM536100A
36-bit
HY514400A
HY531000A
22uFdecouDlina
HYM536100AM/ALM
HYM536100AMG/ALMG
1CC04-01-FEB94
HYM536100AM
HYM536100AMG
C 55GB
HYM536100AM60
8ca3
hym536100am hyundai
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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OCR Scan
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HYM591000C
HY531000A
22/iF
HYM591OOOCM/CLM
1BB08-10-MAYW
4b750Ã
07IV7B1
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PDF
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HYM591000B
Abstract: No abstract text available
Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is
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OCR Scan
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HYM591000B
HY514400A
HY531000A
HYM591000BM/BLM
BB06-00-M
1BB06-00-M
1BB06-00-MAY93
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PDF
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HY5118160
Abstract: No abstract text available
Text: 'HYUNDAI HYM536220 W-Series 2M X 36-b¡l CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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OCR Scan
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HYM536220
36-bit
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
DQ0-DQ35)
1C006-01-SEP94
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PDF
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HY514260
Abstract: HY5117404A 164-04A 4m 300mil
Text: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1
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OCR Scan
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HY531000A
HY534256A
256KX8
HY512800
HY512264
HY5120
6404A
HY5116404B
HY51V16404A
HY51V16404B
HY514260
HY5117404A
164-04A
4m 300mil
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PDF
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r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
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OCR Scan
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256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y531000A H Y U N D A I SEMICONDUCTOR S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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Y531000A
HY531000A
300mil
Schottk31000A
300BSC
100BSC
1AB05-10-APR93
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PDF
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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OCR Scan
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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PDF
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HY531000ALJ60
Abstract: HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc
Text: H Y 5 3 1 0 0 0 A ‘ • H Y U N D A I S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY531000A
HY531000A
TheHY531000Autilizes
HY531000Ato
300mil
300BSC
3-11deg
1AB01-20-MAY95
HY531000AS
HY531000ALJ60
HY531000ALJ
HY531000ALJ-60
HY531000AJ
pin diagram of ic 7493
hbsc
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PDF
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