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    A109D

    Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
    Text: HY51V17400B Series •YUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400B 51V17400B 0260X68040) 157BSC 1AD48-00-MAY95 HY51V17400BJ HY51V17400BSD A109D max3843 lcd hyundai WWD 3P hyundai hy 555

    Untitled

    Abstract: No abstract text available
    Text: "V Y U l i n A l m H Y 5 1 1 6 4 0 4 A S e r ie s i u n u i t l 4 M x 4 . b¡t C M 0S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes H yundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116404A HY5116404A 1AD37-10-MAY95 HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5116404AR

    Untitled

    Abstract: No abstract text available
    Text: • HSEMICONDUCTOR YUNDAI HYM540400 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5116400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM540400 40-bit HY5116400 HYM540400M/LM/TM/LTM HYM540400MG/LMG/TMG/LTMG HYM540400M/MG HYM540400TM/TMG

    iA17

    Abstract: No abstract text available
    Text: HY62V8400 Series •H YUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using yundai’s high perfromance twin tub CMOS process technology. The HY62V8400 has a data retention mode that


    OCR Scan     		PDF HY62V8400 512KX 55/70/85/100ns -100/120/150/200ns 240BSC 525mil 1DE03-11-MAY95 iA17

    NCC 5551

    Abstract: SS LSE 0530 HY6264AL ZT 5551 y626
    Text: HY6264A-I Series •YUNDAI 8K X CMOS SRAM 8 -b it DESCRIPTION The H Y 6 26 4A -I is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using H yundai's high performance twin tub C M O S pro cess technology. This high reliability pro cess coupled with innovative circuit


    OCR Scan     		PDF HY6264A-I 1DB02-11-M 0000BSC 330mil 878ft 1DB02-11-MAY9S HY6264ALP-I HY6264ALLP-I NCC 5551 SS LSE 0530 HY6264AL ZT 5551 y626

    M6312

    Abstract: No abstract text available
    Text: PRELIMINARY ••H YUNDAI SEMICONDUCTOR HY234001 “ rom M631200A-MAY92 FEATURES DESCRIPTION The HY234001 is mask-programmable ROM organized as 524,288 words by 8 bits. It is fabricated using YUNDAI’S CMOS pro­ cess technology. The HY234001 operates with


    OCR Scan     		PDF HY234001 HY234001-15 HY234001 M631200A-MAY92 32-pin HY234001-20 HY234 M6312

    Untitled

    Abstract: No abstract text available
    Text: HSEMICONDUCTOR YUNDAI HY62V256 Series 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62V256 is a 262,144 bit high-speed Static RAM organized as 32,768 x 8-bits. The device is fabricated using yundai's advanced CMOS process and high-speed circuit technology. The HY62V256 has an output enable


    OCR Scan     		PDF HY62V256 100ns -10-M 1DC05-10-M HY62V256P

    HY5116100B

    Abstract: 1AD41-00-MAY95 HY5116100
    Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide


    OCR Scan     		PDF HY5116100B 16Mx1 HY5116100Bis TheHY5116100B 4b750Ã 300435b 1AD41-00-MAY9S HY5116100BJ 1AD41-00-MAY95 HY5116100

    534256

    Abstract: IRC20
    Text: yundai electronics 51E » Mb750ûfi Q G O O b b B 500 • H Y N K T - 4 ^ 3 - •HYUNDA i 7 HY534256 SEMICONDUCTOI 2-«.k l-liii I M ds | K\M M 1 8 1 2 0 2 B -JA N 9 2 DESCRIPTION The HY534256 is a high speed, low power 262,144 X4 bit CMOS dynamic random access


    OCR Scan     		PDF Mb750 HY534256 T--46-- 534256 IRC20

    HYM532100AMG

    Abstract: MCS28 HYM532100A hym532100AM
    Text: • HSEMICONDUCTOR YUNDAI H Y M 5 3 2 1 0 0 A S e r ie s 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF 32-bit HYM532100A HY514400A HYM5321OOAM/ALM HYM53210OAMG/ALMG 1CC03-00-MAY83 1CC03-00-MAY93 HYM532100AMG MCS28 hym532100AM

    HY51V16404B

    Abstract: WP4L CA3C1
    Text: 1 YUNDAI 4 M x 4 _bjt HY51V16404B Series CMos DRAM with Extended Data Out D E S C R IP T IO N The HY51V16404B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16404B utilizes yundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY51V16404B 1AD51-104IAY95 HY51V16404BJ HY51V16404BSLJ HY51V16404BT HY51V16404BSLT WP4L CA3C1

    TAA201

    Abstract: HY534256
    Text: yundai e l e c t r o n ic s 51E » M b750ûfi QGOObbB 5 0 0 • H Y N K T - 4 ^ 3 - •HYUNDA i 7 HY534256 SEMICONDUCTOI 2-«.k l-liii I Mds | K\M M 1 8 1 2 0 2 B -JA N 9 2 DESCRIPTION The HY534256 is a high speed, low power 262,144 X4 bit CMOS dynamic random access


    OCR Scan     		PDF Mb750Ã HY534256 M181202B-JAN92 0000L T-46-23-17 TAA201

    PACKAGE-600MIL

    Abstract: 8KX8-Bit CMOS SRAM 192x8
    Text: YUNDAI ELECTRONICS sie t> m a s o f i a 0001157 bse h h y n k •H yundai SEMICONDUCTOR HY6264A 8KX8-Bit C M O S SRAM M261201B-MAY92 DESCRIPTION FEATURES The HY6264A is a high speed, low power 8,192 words by 8-bit CMOS, static RAM fabrica­ ted using a twin tub CMOS process technolo­


    OCR Scan     		PDF 50afl HY6264A M261201B-MAY92 DQG1137 PACKAGE-600MIL PACKAGE-330MIL 8KX8-Bit CMOS SRAM 192x8

    Untitled

    Abstract: No abstract text available
    Text: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using yundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees


    OCR Scan     		PDF HY62V256 HV62V256 55/70/85/100ns 100/120/150ns 1DC03-11-MAY95 HY62V256LP HY62V256LJ

    Untitled

    Abstract: No abstract text available
    Text: •YUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


    OCR Scan     		PDF 1Mx16, 16-bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: •YUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: YUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM

    HY514264

    Abstract: No abstract text available
    Text: •YUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    OCR Scan     		PDF HY514264B 256Kx16, 16-bit 40-pin 400mil) 16-bits 256Kx16 HY514264

    Untitled

    Abstract: No abstract text available
    Text: ^YUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and


    OCR Scan     		PDF HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG/ASLTRG 22SI5 Mb750flfl 1CE16-10-APR96

    Untitled

    Abstract: No abstract text available
    Text: •YUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using yundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256B-I 05-11-MAY95 Mb75Dflfi HY62256BLP-I HY62256BLLP-I HY62256BU-I

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100B Series -YUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes yundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100B 4b750flà 1AD43-00-MAY95 QQ04374 HY51V16100BJ HY51V16100BSU

    HYM532414

    Abstract: HY5117404
    Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted


    OCR Scan     		PDF HYM532414 32-bit HY5117404A HYM532414TNG/SLTNG A0-A10) DQ0-DQ31) 1CE13-10-DEC94 YM532414 HY5117404

    HY57V168

    Abstract: hy57v168010 1sd31 66MHz
    Text: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The yundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of


    OCR Scan     		PDF 168010C 216-bits 576x8. 57V168010C 400mil 44pin 047CK 1SD31-11-MAR98 HY57V168 hy57v168010 1sd31 66MHz