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    HY57V643220CT Price and Stock

    SK Hynix Inc HY57V643220CT-6

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    Bristol Electronics HY57V643220CT-6 176
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    HY57V643220CT-6 51
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    Quest Components HY57V643220CT-6 140
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    HY57V643220CT-6 8
    • 1 $3.75
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    SK Hynix Inc HY57V643220CT-7

    SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY57V643220CT-7 1,154
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    SK Hynix Inc HY57V643220CT6DR

    4 BANKS X 512K X 32 BIT SYNCHRONOUS DRAM Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86
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    ComSIT USA HY57V643220CT6DR 620
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    SK Hynix Inc HY57V643220CT7

    4 BANKS X 512K X 32 BIT SYNCHRONOUS DRAM Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86
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    ComSIT USA HY57V643220CT7 170
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    HY57V643220CT Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V643220CT Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-47 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-5 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-55 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-6 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-7 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-8 Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-I Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-P Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF
    HY57V643220CT-S Hynix Semiconductor 4 Banks x 512K x 32-Bit Synchronous DRAM Original PDF

    HY57V643220CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V64322

    Abstract: No abstract text available
    Text: HY57V643220CT P 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220CT(P) is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220CT(P) is organized as 4banks of 524,288x32.


    Original     		PDF HY57V643220CT 32Bit 864-bit 288x32. 400mil 86pin HY57V64322

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		PDF W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v

    k4s643232f

    Abstract: KS RMII Reduced MII aa2c "routing tables"
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB, TXC-05870 k4s643232f KS RMII Reduced MII aa2c "routing tables"

    TCXO A31 10MHZ

    Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
    Text: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be


    Original     		PDF DS34S108, DS34S104, DS34S102, DS34S101 DS34S108 823/G board25 DS34S108 TCXO A31 10MHZ MT48LC4M32B2TG-6 L1V16 Datum OCXO

    HY57V64

    Abstract: No abstract text available
    Text: HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32.


    Original     		PDF HY57V643220C 32Bit HY57V643220C 864-bit 288x32. 400mil 86pin HY57V64

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 823/G DS34S10x DS34S101 DS34S102

    TXC-06010-MB

    Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
    Text:  PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or


    Original     		PDF TXC-06010 TXC-06010-MB, TXC-06010-MB TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk

    Untitled

    Abstract: No abstract text available
    Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34S101, DS34S102, DS34S104, DS34S108 DS34S101 DS34S102

    MA2180

    Abstract: No abstract text available
    Text: HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hy nix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks o f


    Original     		PDF HY57V643220C 32Bit HY57V643220C 864-bit 288x32. 400mil 86pin MA2180

    HY57V643220CLT-7i

    Abstract: No abstract text available
    Text: HY57V643220C-I Series 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V643220C is organized as 4banks of


    Original     		PDF HY57V643220C-I 32Bit HY57V643220C 864-bit 288x32. 400mil HY57V643220CLT-7i

    Untitled

    Abstract: No abstract text available
    Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks


    Original     		PDF TXC-05870 TXC-05870-MB,

    Untitled

    Abstract: No abstract text available
    Text: HY57V643220C-I Series 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V643220C is organized as 4banks of


    Original     		PDF HY57V643220C-I 32Bit HY57V643220C 864-bit 288x32. HY57V643220C 400mil 86pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hy nix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32.


    Original     		PDF HY57V643220C 32Bit HY57V643220C 864-bit 288x32. 400mil 86pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V643220C-I Series 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V643220C is organized as 4banks of


    Original     		PDF HY57V643220C-I 32Bit HY57V643220C 864-bit 288x32. HY57V643220C 400mil 86pin

    redux 204

    Abstract: V54C365164VCT8PC LTXD e3 mii to hdlc RS-120 DC-DS-0120 MA10 rs120a DC-AN-0120-004 MD1811
    Text: RS-120 Data Sheet Features • 100 Mbps full duplex protocol conversion and bridging • up to100 Mbps MII; 100 Mbps HDLC • MII - HDLC Operating Mode • MII - MII Operating Mode • “drop-in” solution • no external CPU required • no software development required


    Original     		PDF RS-120 to100 CS004 RS-120Q CS-029 RS-120F RS-120 redux 204 V54C365164VCT8PC LTXD e3 mii to hdlc DC-DS-0120 MA10 rs120a DC-AN-0120-004 MD1811

    RFC-5087

    Abstract: TXC-06010AIBG TXC-06010-MB K4S283232E 0X0076 cesopsn TXC-06010
    Text: PacketTrunk-4 Plus Device TDM-over-Packet Gateway Device TXC-06010 DATA SHEET PRELIMINARY TXC-06010- MB, Ed. 6 December 2009 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII;HDX or


    Original     		PDF TXC-06010 TXC-06010- TXC-06010-MB, RFC-5087 TXC-06010AIBG TXC-06010-MB K4S283232E 0X0076 cesopsn TXC-06010

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    diode CH9d

    Abstract: CH7C diode CH8C diode diode ch6b rg703 Diode TS21C diode code eb13 RFC-5087 10407C 2125S
    Text: 19-4835; 8/09 DS34T101, DS34T102, DS34T104, DS34T108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34T101, DS34T102, DS34T104, DS34T108 823/G DS34T108. DS34T104. diode CH9d CH7C diode CH8C diode diode ch6b rg703 Diode TS21C diode code eb13 RFC-5087 10407C 2125S

    Untitled

    Abstract: No abstract text available
    Text: HY57V643220C-I Series 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V643220C is organized as 4banks of


    Original     		PDF HY57V643220C-I 32Bit HY57V643220C 864-bit 288x32. HY57V643220C 400mil 86pin

    TS21C

    Abstract: No abstract text available
    Text: 19-4835; 8/09 DS34T101, DS34T102, DS34T104, DS34T108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial


    Original     		PDF DS34T101, DS34T102, DS34T104, DS34T108 823/G DS34T108. DS34T104. TS21C

    ma1901

    Abstract: refresh logic
    Text: HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32.


    Original     		PDF HY57V643220C 32Bit HY57V643220C 864-bit 288x32. 400mil 86pin ma1901 refresh logic

    Untitled

    Abstract: No abstract text available
    Text: HY57V643220CT 2Mx32-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V643220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32.


    OCR Scan     		PDF HY57V643220CT 2Mx32-bit, HY57V643220C 864-bit 288x32. 64M-bit 400mil 86pin

    4mx16

    Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part


    OCR Scan     		PDF HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, x16-bit, HYM41V33100BTWG HYM41V33100DTYG PC133 1Mx32, 1Mx16 4mx16 HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841